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Class Information
Number: 438/919
Name: Semiconductor device manufacturing: process > Doping > Compensation doping
Description: Art collection under 914 involving doping of over-lapping regions to convert first to one conductivity type and then to the other conductivity type.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8476152 N-type carrier enhancement in semiconductors Jul. 2, 2013
8420489 High-performance semiconductor device and method of manufacturing the same Apr. 16, 2013
8361866 Modifying work function in PMOS devices by counter-doping Jan. 29, 2013
8178430 N-type carrier enhancement in semiconductors May. 15, 2012
8129292 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor Mar. 6, 2012
8017473 Modifying work function in PMOS devices by counter-doping Sep. 13, 2011
7718494 Method for forming high-drain-voltage tolerance MOSFET transistor in a CMOS process flow with double well dose approach May. 18, 2010
7416958 Epitaxial semiconductor layer and method Aug. 26, 2008
7172949 Epitaxial semiconductor layer and method Feb. 6, 2007
6943116 Method for fabricating a p-channel field-effect transistor on a semiconductor substrate Sep. 13, 2005
6777254 Semiconductor device and fabrication method thereof Aug. 17, 2004
6756619 Semiconductor constructions Jun. 29, 2004
6551903 Melt through contact formation method Apr. 22, 2003
6534354 Method of manufacturing MOS transistor with fluorine implantation at a low energy Mar. 18, 2003
6455402 Method of forming retrograde doping file in twin well CMOS device Sep. 24, 2002
6436769 Split gate flash memory with virtual ground array structure and method of fabricating the same Aug. 20, 2002
6399457 Semiconductor device having capacitor and method of manufacturing the same Jun. 4, 2002
6362035 Channel stop ion implantation method for CMOS integrated circuits Mar. 26, 2002
6297101 Method for producing an MOS transistor structure with elevated body conductivity Oct. 2, 2001
6245608 Ion implantation process for forming contact regions in semiconductor materials Jun. 12, 2001
6165847 Nonvolatile semiconductor memory device and method for manufacturing the same Dec. 26, 2000
6107137 Method of forming a capacitor Aug. 22, 2000
6103562 Method of making semiconductor device with decreased channel width and constant threshold voltage Aug. 15, 2000
6100143 Method of making a depleted poly-silicon edged MOSFET structure Aug. 8, 2000
6051458 Drain and source engineering for ESD-protection transistors Apr. 18, 2000
H1835 Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources Feb. 1, 2000
5976942 Method of manufacturing a high-voltage semiconductor device Nov. 2, 1999
5943594 Method for extended ion implanter source lifetime with control mechanism Aug. 24, 1999
5940724 Method for extended ion implanter source lifetime Aug. 17, 1999
5933737 Buried-channel MOS transistor and process of producing same Aug. 3, 1999
5908309 Fabrication method of semiconductor device with CMOS structure Jun. 1, 1999
5834347 MIS type semiconductor device and method for manufacturing same Nov. 10, 1998
5780330 Selective diffusion process for forming both n-type and p-type gates with a single masking step Jul. 14, 1998
5773335 Method for forming twin-tub wells in substrate Jun. 30, 1998
5766695 Method for reducing surface layer defects in semiconductor materials having a volatile species Jun. 16, 1998
5756383 Method of manufacturing an active region of a semiconductor by diffusing a counterdopant out of a sidewall spacer May. 26, 1998
5661046 Method of fabricating BiCMOS device Aug. 26, 1997
5492847 Counter-implantation method of manufacturing a semiconductor device with self-aligned anti-punchthrough pockets Feb. 20, 1996
5482888 Method of manufacturing a low resistance, high breakdown voltage, power MOSFET Jan. 9, 1996
5384279 Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations Jan. 24, 1995
5374589 Process of making a bistable photoconductive component Dec. 20, 1994
5362657 Lateral complementary heterojunction bipolar transistor and processing procedure Nov. 8, 1994
5278085 Single mask process for forming both n-type and p-type gates in a polycrystalline silicon layer during the formation of a semiconductor device Jan. 11, 1994
5252499 Wide band-gap semiconductors having low bipolar resistivity and method of formation Oct. 12, 1993
5198370 Method for producing an infrared detector Mar. 30, 1993
5185276 Method for improving low temperature current gain of bipolar transistors Feb. 9, 1993
5175119 Method of producing insulated-gate field effect transistor Dec. 29, 1992
5128277 Conductivity modulation type semiconductor device and method for manufacturing the same Jul. 7, 1992
5114869 Method for producing reverse staggered type silicon thin film transistor May. 19, 1992
5091321 Method for making an NPN transistor with controlled base width compatible with making a Bi-MOS integrated circuit Feb. 25, 1992

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