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Class Information
Number: 438/918
Name: Semiconductor device manufacturing: process > Doping > Special or nonstandard dopant
Description: Art collection under 914 involving use of a special or nonstandard dopant.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8471307 In-situ carbon doped e-SiGeCB stack for MOS transistor Jun. 25, 2013
8361893 Semiconductor device and substrate with chalcogen doped region Jan. 29, 2013
7943468 Penetrating implant for forming a semiconductor device May. 17, 2011
7759657 Methods for implanting B22Hx and its ionized lower mass byproducts Jul. 20, 2010
7728347 ZnO layer and semiconductor light emitting device Jun. 1, 2010
7501332 Doping method and manufacturing method for a semiconductor device Mar. 10, 2009
7214614 System for controlling metal formation processes using ion implantation May. 8, 2007
7186631 Method for manufacturing a semiconductor device Mar. 6, 2007
7041530 Method of production of nano particle dispersed composite material May. 9, 2006
6960498 Doping method, doping apparatus, and control system for doping apparatus Nov. 1, 2005
6943116 Method for fabricating a p-channel field-effect transistor on a semiconductor substrate Sep. 13, 2005
6936530 Deposition method for Si-Ge epi layer on different intermediate substrates Aug. 30, 2005
6927153 Ion implantation with multiple concentration levels Aug. 9, 2005
6911376 Selective heating using flash anneal Jun. 28, 2005
6727175 Method of controlling metal formation processes using ion implantation, and system for performing same Apr. 27, 2004
6562686 Method for fabricating semiconductor device May. 13, 2003
6479312 Gallium phosphide luminescent device Nov. 12, 2002
6465370 Low leakage, low capacitance isolation material Oct. 15, 2002
6410348 Interface texturing for light-emitting device Jun. 25, 2002
6204157 Method for establishing shallow junction in semiconductor device to minimize junction capacitance Mar. 20, 2001
6191014 Method for manufacturing compound semiconductor Feb. 20, 2001
6093648 Production method for a discrete structure substrate Jul. 25, 2000
6063682 Ultra-shallow p-type junction having reduced sheet resistance and method for producing shallow junctions May. 16, 2000
6048782 Method for doped shallow junction formation using direct gas-phase doping Apr. 11, 2000
6043117 SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and method of making Mar. 28, 2000
6043139 Process for controlling dopant diffusion in a semiconductor layer Mar. 28, 2000
6013332 Boron doping by decaborane Jan. 11, 2000
6008124 Semiconductor device having improved lamination-structure reliability for buried layers, silicide films and metal films, and a method for forming the same Dec. 28, 1999
5885861 Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor Mar. 23, 1999
5855962 Flowable spin-on insulator Jan. 5, 1999
5821147 Integrated circuit fabrication Oct. 13, 1998
5780347 Method of forming polysilicon local interconnects Jul. 14, 1998
5766695 Method for reducing surface layer defects in semiconductor materials having a volatile species Jun. 16, 1998
5753039 Manufacturing method of p-type semiconductor crystal May. 19, 1998
5656538 Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices Aug. 12, 1997
5599735 Method for doped shallow junction formation using direct gas-phase doping Feb. 4, 1997
5585291 Method for manufacturing a semiconductor device containing a crystallization promoting material Dec. 17, 1996
5534079 Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition Jul. 9, 1996
5364804 Nitride cap sidewall oxide protection from BOE etch Nov. 15, 1994
5322813 Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition Jun. 21, 1994
5294287 Class of magnetic materials for solid state devices Mar. 15, 1994
5284793 Method of manufacturing radiation resistant semiconductor device Feb. 8, 1994
5252512 TEOV doping of gallium arsenide Oct. 12, 1993
5212101 Substitutional carbon in silicon May. 18, 1993
5208184 P-N junction diffusion barrier employing mixed dopants May. 4, 1993
5185276 Method for improving low temperature current gain of bipolar transistors Feb. 9, 1993
5156979 Semiconductor-based radiation-detector element Oct. 20, 1992
5108935 Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities Apr. 28, 1992

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