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Class Information
Number: 438/917
Name: Semiconductor device manufacturing: process > Doping > Deep level dopants (e.g., gold (au), chromium (cr), iron (fe), nickel (ni), etc.)
Description: Art collection under 914 involving the utilization of dopants serving to reduce minority carrier lifetime through the formation of energy levels located in the forbidden band of a semiconductor material that are not near the conduction or valence band edges.










Patents under this class:

Patent Number Title Of Patent Date Issued
8455328 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors Jun. 4, 2013
8193537 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors Jun. 5, 2012
8105929 Gate control and endcap improvement Jan. 31, 2012
7932105 Systems and methods for detecting and monitoring nickel-silicide process and induced failures Apr. 26, 2011
7843062 Thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature Nov. 30, 2010
7709401 Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature May. 4, 2010
7432171 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Oct. 7, 2008
7041530 Method of production of nano particle dispersed composite material May. 9, 2006
6960486 Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material Nov. 1, 2005
6884718 Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby Apr. 26, 2005
6878579 Semiconductor device and method of manufacturing the same Apr. 12, 2005
6747352 Integrated circuit having multiple power/ground connections to a single external terminal Jun. 8, 2004
6432844 Implanted conductor and methods of making Aug. 13, 2002
5960322 Suppression of boron segregation for shallow source and drain junctions in semiconductors Sep. 28, 1999
5679603 Method of making semiconductor device including high resistivity layer Oct. 21, 1997
5661053 Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers Aug. 26, 1997
5441900 CMOS latchup suppression by localized minority carrier lifetime reduction Aug. 15, 1995
5283202 IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions Feb. 1, 1994
5252512 TEOV doping of gallium arsenide Oct. 12, 1993
5227315 Process of introduction and diffusion of platinum ions in a slice of silicon Jul. 13, 1993
5060110 High frequency MOSCAP Oct. 22, 1991
4853077 Process for the preparation of mono-crystalline 3-5 semi-insulating materials by doping and use of the semi-insulating materials thus obtained Aug. 1, 1989
4755856 Znse green light emitting diode Jul. 5, 1988
4717588 Metal redistribution by rapid thermal processing Jan. 5, 1988
4578126 Liquid phase epitaxial growth process Mar. 25, 1986
4203780 Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature May. 20, 1980
4160261 MIS Heterojunction structures Jul. 3, 1979
4107731 Silicon doped with cadmium to reduce lifetime Aug. 15, 1978
3953243 Method for setting the lifetime of charge carriers in semiconductor bodies Apr. 27, 1976











 
 
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