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Class Information
Number: 438/916
Name: Semiconductor device manufacturing: process > Doping > Autodoping control or utilization
Description: Art collection under 914 involving the regulation of self-induced impurity production in a semiconductor substrate.










Patents under this class:

Patent Number Title Of Patent Date Issued
8420516 Method for producing n-type group III nitride semiconductor Apr. 16, 2013
7923339 Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method Apr. 12, 2011
7214592 Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants May. 8, 2007
6838359 Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy Jan. 4, 2005
6635556 Method of preventing autodoping Oct. 21, 2003
6599772 Solid-state pickup element and method for producing the same Jul. 29, 2003
6465333 Method of manufacturing a circuit Oct. 15, 2002
6232172 Method to prevent auto-doping induced threshold voltage shift May. 15, 2001
6162708 Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer Dec. 19, 2000
6007624 Process for controlling autodoping during epitaxial silicon deposition Dec. 28, 1999
5863832 Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system Jan. 26, 1999
5811345 Planarization of shallow- trench- isolation without chemical mechanical polishing Sep. 22, 1998
5731626 Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby Mar. 24, 1998
5648282 Autodoping prevention and oxide layer formation apparatus Jul. 15, 1997
5547899 Method for making a semiconductor device Aug. 20, 1996
5461002 Method of making diffused doped areas for semiconductor components Oct. 24, 1995
5318666 Method for via formation and type conversion in group II and group VI materials Jun. 7, 1994
5256594 Masking technique for depositing gallium arsenide on silicon Oct. 26, 1993
5225235 Semiconductor wafer and manufacturing method therefor Jul. 6, 1993
5047365 Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth Sep. 10, 1991
4925809 Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor May. 15, 1990
4883769 Method of making a multidimensional quantum-well array Nov. 28, 1989
4855250 Method of manufacturing a semiconductor laser with autodoping control Aug. 8, 1989
4696701 Epitaxial front seal for a wafer Sep. 29, 1987
4687682 Back sealing of silicon wafers Aug. 18, 1987
4662956 Method for prevention of autodoping of epitaxial layers May. 5, 1987
4571275 Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector Feb. 18, 1986
4504330 Optimum reduced pressure epitaxial growth process to prevent autodoping Mar. 12, 1985
4484332 Multiple double heterojunction buried laser device Nov. 20, 1984
4479222 Diffusion barrier for long wavelength laser diodes Oct. 23, 1984
4379005 Semiconductor device fabrication Apr. 5, 1983
4371967 Semiconductor laser Feb. 1, 1983
4236947 Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon Dec. 2, 1980
4170501 Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition Oct. 9, 1979
4153486 Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preh May. 8, 1979
3982974 Compensation of autodoping in the manufacture of integrated circuits Sep. 28, 1976
3956037 Method of forming semiconductor layers by vapor growth May. 11, 1976











 
 
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