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Class Information
Number: 438/914
Name: Semiconductor device manufacturing: process > Doping
Description: Art collection involving the doping of a semiconductor substrate with conductivity modifying impurities.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7560367 |
Method for thermal processing with a RTP process using temperature spaces in radiation equilibrium |
Jul. 14, 2009 |
| 7368317 |
Method of producing an N-type diamond with high electrical conductivity |
May. 6, 2008 |
| 7361540 |
Method of reducing noise disturbing a signal in an electronic device |
Apr. 22, 2008 |
| 7341787 |
Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers |
Mar. 11, 2008 |
| 7314794 |
Low-cost high-performance planar back-gate CMOS |
Jan. 1, 2008 |
| 7250312 |
Doping method and method for fabricating thin film transistor |
Jul. 31, 2007 |
| 7232744 |
Method for implanting dopants within a substrate by tilting the substrate relative to the implant source |
Jun. 19, 2007 |
| 7176484 |
Use of an energy source to convert precursors into patterned semiconductors |
Feb. 13, 2007 |
| 7148131 |
Method for implanting ions in a semiconductor |
Dec. 12, 2006 |
| 6977204 |
Method for forming contact plug having double doping distribution in semiconductor device |
Dec. 20, 2005 |
| 6872628 |
Method of manufacturing semiconductor device |
Mar. 29, 2005 |
| 6872643 |
Implant damage removal by laser thermal annealing |
Mar. 29, 2005 |
| 6815318 |
Manufacturing method of semiconductor device |
Nov. 9, 2004 |
| 6812079 |
Method for a junction field effect transistor with reduced gate capacitance |
Nov. 2, 2004 |
| 6797596 |
Sacrificial deposition layer as screening material for implants into a wafer during the manufacture of a semiconductor device |
Sep. 28, 2004 |
| 6794277 |
Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device |
Sep. 21, 2004 |
| 6716690 |
Uniformly doped source/drain junction in a double-gate MOSFET |
Apr. 6, 2004 |
| 6645839 |
Method for improving a doping profile for gas phase doping |
Nov. 11, 2003 |
| 6616786 |
Process for applying an ink-only label to a polymeric surface |
Sep. 9, 2003 |
| 6602768 |
MOS-gated power device with doped polysilicon body and process for forming same |
Aug. 5, 2003 |
| 6555451 |
Method for making shallow diffusion junctions in semiconductors using elemental doping |
Apr. 29, 2003 |
| 6503841 |
Oxide etch |
Jan. 7, 2003 |
| 6498079 |
Method for selective source diffusion |
Dec. 24, 2002 |
| 6486064 |
Shallow junction formation |
Nov. 26, 2002 |
| 6444550 |
Laser tailoring retrograde channel profile in surfaces |
Sep. 3, 2002 |
| 6432783 |
Method for doping a semiconductor device through a mask |
Aug. 13, 2002 |
| 6313398 |
Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
Nov. 6, 2001 |
| 6180561 |
Complexing agent for thermal color proofing |
Jan. 30, 2001 |
| 6001770 |
Slipping layer for dye-donor element used in thermal dye transfer |
Dec. 14, 1999 |
| 5985728 |
Silicon on insulator process with recovery of a device layer from an etch stop layer |
Nov. 16, 1999 |
| 5972743 |
Precursor compositions for ion implantation of antimony and ion implantation process utilizing same |
Oct. 26, 1999 |
| 5895259 |
Polysilicon diffusion doping method employing a deposited doped oxide layer with a highly uniform thickness |
Apr. 20, 1999 |
| 5739059 |
Method of forming a semiconductor device having high and low resistance polysilicon |
Apr. 14, 1998 |
| 5650038 |
Method for dry etching |
Jul. 22, 1997 |
| 5565377 |
Process for forming retrograde profiles in silicon |
Oct. 15, 1996 |
| 5514620 |
Method of producing PN junction device |
May. 7, 1996 |
| 5298435 |
Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
Mar. 29, 1994 |
| 5236856 |
Method for minimizing diffusion of conductivity enhancing impurities from one region of polysilicon layer to another region and a semiconductor device produced according to the method |
Aug. 17, 1993 |
| 5189297 |
Planar double-layer heterojunction HgCdTe photodiodes and methods for fabricating same |
Feb. 23, 1993 |
| 5177025 |
Method of fabricating an ultra-thin active region for high speed semiconductor devices |
Jan. 5, 1993 |
| 4900257 |
Method of making a polycide gate using a titanium nitride capping layer |
Feb. 13, 1990 |
| 4897368 |
Method of fabricating a polycidegate employing nitrogen/oxygen implantation |
Jan. 30, 1990 |
| 4714686 |
Method of forming contact plugs for planarized integrated circuits |
Dec. 22, 1987 |
| 4525224 |
Method for the doping of supporting silicon plates for the manufacture of semiconductors |
Jun. 25, 1985 |
| 4477964 |
Method of making p-i-n photodiodes |
Oct. 23, 1984 |
| 4354309 |
Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon |
Oct. 19, 1982 |
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