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Class Information
Number: 438/91
Name: Semiconductor device manufacturing: process > Making device or circuit responsive to nonelectrical signal > Responsive to electromagnetic radiation > Avalanche diode
Description: Process for making a device which is configured to operate in a manner in which an external voltage applied in the reverse-conducting direction of the device junction with sufficient magnitude causes the potential barrier at the junction to breakdown due to electrons or holes gaining sufficient speed to dislodge valence electrons and thus create more hole-electron current carriers resulting in a sudden change from high dynamic electrical resistance to very low dynamic resistance.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7582515 |
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Jun. 30, 2009 |
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| 7528017 |
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May. 5, 2009 |
| 7510903 |
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| 7474011 |
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| 7429761 |
High power diode utilizing secondary emission |
Sep. 30, 2008 |
| 7384854 |
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| 7365773 |
CMOS APS with stacked avalanche multiplication layer and low voltage readout electronics |
Apr. 29, 2008 |
| 7309638 |
Method of manufacturing a semiconductor component |
Dec. 18, 2007 |
| 7268339 |
Large area semiconductor detector with internal gain |
Sep. 11, 2007 |
| 7268010 |
Method of manufacturing an LED |
Sep. 11, 2007 |
| 7229932 |
Method and structure for fabricating a halftone mask for the manufacture of semiconductor wafers |
Jun. 12, 2007 |
| 7169634 |
Design and fabrication of rugged FRED |
Jan. 30, 2007 |
| 7169628 |
Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
Jan. 30, 2007 |
| 7166482 |
Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
Jan. 23, 2007 |
| 7091527 |
Semiconductor photodetection device |
Aug. 15, 2006 |
| 7056761 |
Avalanche diode with breakdown voltage controlled by gate length |
Jun. 6, 2006 |
| 6946318 |
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Sep. 20, 2005 |
| 6933169 |
Optical semiconductor device |
Aug. 23, 2005 |
| 6885039 |
Semiconductor photodetector and avalanche photodiode |
Apr. 26, 2005 |
| 6869820 |
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Mar. 22, 2005 |
| 6855587 |
Gate-controlled, negative resistance diode device using band-to-band tunneling |
Feb. 15, 2005 |
| 6833284 |
Method for subdividing wafers into chips |
Dec. 21, 2004 |
| 6821831 |
Electrostatic discharge protection in double diffused MOS transistors |
Nov. 23, 2004 |
| 6797581 |
Avalanche photodiode for photon counting applications and method thereof |
Sep. 28, 2004 |
| 6774460 |
IMPATT diodes |
Aug. 10, 2004 |
| 6743657 |
Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes |
Jun. 1, 2004 |
| 6686647 |
Gunn diode and method of manufacturing the same |
Feb. 3, 2004 |
| 6683334 |
Compound semiconductor protection device for low voltage and high speed data lines |
Jan. 27, 2004 |
| 6677655 |
Silicon wafer with embedded optoelectronic material for monolithic OEIC |
Jan. 13, 2004 |
| RE38072 |
Fabrication method for AlGaInNPAsSb based devices |
Apr. 8, 2003 |
| 6492239 |
Method for fabricating avalanche photodiode |
Dec. 10, 2002 |
| 6489659 |
Non-hermetic APD |
Dec. 3, 2002 |
| 6482671 |
Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
Nov. 19, 2002 |
| 6437233 |
Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor |
Aug. 20, 2002 |
| 6344368 |
Method for forming CMOS sensor |
Feb. 5, 2002 |
| 6074892 |
Semiconductor hetero-interface photodetector |
Jun. 13, 2000 |
| 6066510 |
Method for forming a photodiode with improved photoresponse behavior |
May. 23, 2000 |
| 6052261 |
Method for manufacturing magnetoresistance head |
Apr. 18, 2000 |
| 6027955 |
Method of making an active pixel sensor integrated with a pinned photodiode |
Feb. 22, 2000 |
| 6015721 |
Method of manufacturing an avalanche photodiode |
Jan. 18, 2000 |
| 5937274 |
Fabrication method for AlGaIn NPAsSb based devices |
Aug. 10, 1999 |
| 5858808 |
Process and auxiliary device for fabricating semiconductor devices |
Jan. 12, 1999 |
| 5843804 |
Method of making avalanche photodiodes with epitaxially-regrown guard rings |
Dec. 1, 1998 |
| 5670383 |
Method for fabrication of deep-diffused avalanche photodiode |
Sep. 23, 1997 |
| 5500376 |
Method for fabricating planar avalanche photodiode array |
Mar. 19, 1996 |
| 5346837 |
Method of making avalanche photodiode |
Sep. 13, 1994 |
| 5343055 |
Avalanche photodiode structure with Mg doping and method |
Aug. 30, 1994 |
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