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Class Information
Number: 438/904
Name: Semiconductor device manufacturing: process > Charge carrier lifetime control
Description: Art collection involving the control of the lifetime of charge carriers (i.e., electrons or holes) in the semiconductor.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
7534666 High voltage non punch through IGBT for switch mode power supplies May. 19, 2009
7510985 Method to manufacture high-precision RFID straps and RFID antennas using a laser Mar. 31, 2009
7473622 Laser annealing method and manufacturing method of a semiconductor device Jan. 6, 2009
6878579 Semiconductor device and method of manufacturing the same Apr. 12, 2005
6759336 Methods for reducing contamination of semiconductor substrates Jul. 6, 2004
6391805 High-pressure anneal process for integrated circuits May. 21, 2002
6387828 High-pressure anneal process for integrated circuits May. 14, 2002
6352946 High-pressure anneal process for integrated circuits Mar. 5, 2002
6187632 Anneal technique for reducing amount of electronic trap in gate oxide film of transistor Feb. 13, 2001
6184135 Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer Feb. 6, 2001
5910257 Process for producing a semiconductor device using purified phosphoric acid Jun. 8, 1999
5851847 Photonic device and process for fabricating the same Dec. 22, 1998
5766966 Power transistor device having ultra deep increased concentration region Jun. 16, 1998
5747371 Method of manufacturing vertical MOSFET May. 5, 1998
5624852 Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time Apr. 29, 1997
5580795 Fabrication method for integrated structure such as photoconductive impedance-matched infrared detector with heterojunction blocking contacts Dec. 3, 1996
5468660 Process for manufacturing an integrated bipolar power device and a fast diode Nov. 21, 1995
5441900 CMOS latchup suppression by localized minority carrier lifetime reduction Aug. 15, 1995
5420045 Process for manufacturing thyristor with adjustable breakover voltage May. 30, 1995
5284780 Method for increasing the electric strength of a multi-layer semiconductor component Feb. 8, 1994
5283202 IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions Feb. 1, 1994
5240876 Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process Aug. 31, 1993
5227315 Process of introduction and diffusion of platinum ions in a slice of silicon Jul. 13, 1993
5196354 Method of manufacturing semiconductor device with controlled carrier lifetime Mar. 23, 1993
5141879 Method of fabricating a FET having a high trap concentration interface layer Aug. 25, 1992
5124772 Insulated gate bipolar transistor with a shortened carrier lifetime region Jun. 23, 1992
4963509 Gold diffusion method for semiconductor devices of high switching speed Oct. 16, 1990
4925812 Platinum diffusion process May. 15, 1990
4903102 Semiconductor photoelectric conversion device and method of making the same Feb. 20, 1990
4806497 Method for producing large-area power semiconductor components Feb. 21, 1989
H569 Charge storage depletion region discharge protection Jan. 3, 1989
4792530 Process for balancing forward and reverse characteristic of thyristors Dec. 20, 1988
4777149 Method of manufacturing power MOSFET Oct. 11, 1988
4766482 Semiconductor device and method of making the same Aug. 23, 1988
4710477 Method for forming latch-up immune, multiple retrograde well high density CMOS FET Dec. 1, 1987
4684413 Method for increasing the switching speed of a semiconductor device by neutron irradiation Aug. 4, 1987
4662957 Method of producing a gate turn-off thyristor May. 5, 1987
4613519 Electron-beam-induced information storage in hydrogenated amorphous silicon device Sep. 23, 1986
4613381 Method for fabricating a thyristor Sep. 23, 1986
4585489 Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer Apr. 29, 1986
4402001 Semiconductor element capable of withstanding high voltage Aug. 30, 1983
4398054 Compensated amorphous silicon solar cell incorporating an insulating layer Aug. 9, 1983
4370180 Method for manufacturing power switching devices Jan. 25, 1983
4301323 Lead-doped silicon with enhanced semiconductor properties Nov. 17, 1981
4290188 Process for producing bipolar semiconductor device utilizing predeposition of dopant and a polycrystalline silicon-gold film followed by simultaneous diffusion Sep. 22, 1981
4273594 Gallium arsenide devices having reduced surface recombination velocity Jun. 16, 1981
4266990 Process for diffusion of aluminum into a semiconductor May. 12, 1981
4234355 Method for manufacturing a semiconductor element utilizing thermal neutron irradiation and annealing Nov. 18, 1980
4230791 Control of valley current in a unijunction transistor by electron irradiation Oct. 28, 1980

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