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Class Information
Number: 438/904
Name: Semiconductor device manufacturing: process > Charge carrier lifetime control
Description: Art collection involving the control of the lifetime of charge carriers (i.e., electrons or holes) in the semiconductor.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6878579 |
Semiconductor device and method of manufacturing the same |
Apr. 12, 2005 |
| 6759336 |
Methods for reducing contamination of semiconductor substrates |
Jul. 6, 2004 |
| 6391805 |
High-pressure anneal process for integrated circuits |
May. 21, 2002 |
| 6387828 |
High-pressure anneal process for integrated circuits |
May. 14, 2002 |
| 6352946 |
High-pressure anneal process for integrated circuits |
Mar. 5, 2002 |
| 6187632 |
Anneal technique for reducing amount of electronic trap in gate oxide film of transistor |
Feb. 13, 2001 |
| 6184135 |
Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer |
Feb. 6, 2001 |
| 5910257 |
Process for producing a semiconductor device using purified phosphoric acid |
Jun. 8, 1999 |
| 5851847 |
Photonic device and process for fabricating the same |
Dec. 22, 1998 |
| 5766966 |
Power transistor device having ultra deep increased concentration region |
Jun. 16, 1998 |
| 5747371 |
Method of manufacturing vertical MOSFET |
May. 5, 1998 |
| 5624852 |
Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time |
Apr. 29, 1997 |
| 5580795 |
Fabrication method for integrated structure such as photoconductive impedance-matched infrared detector with heterojunction blocking contacts |
Dec. 3, 1996 |
| 5468660 |
Process for manufacturing an integrated bipolar power device and a fast diode |
Nov. 21, 1995 |
| 5441900 |
CMOS latchup suppression by localized minority carrier lifetime reduction |
Aug. 15, 1995 |
| 5420045 |
Process for manufacturing thyristor with adjustable breakover voltage |
May. 30, 1995 |
| 5284780 |
Method for increasing the electric strength of a multi-layer semiconductor component |
Feb. 8, 1994 |
| 5283202 |
IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions |
Feb. 1, 1994 |
| 5240876 |
Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process |
Aug. 31, 1993 |
| 5227315 |
Process of introduction and diffusion of platinum ions in a slice of silicon |
Jul. 13, 1993 |
| 5196354 |
Method of manufacturing semiconductor device with controlled carrier lifetime |
Mar. 23, 1993 |
| 5141879 |
Method of fabricating a FET having a high trap concentration interface layer |
Aug. 25, 1992 |
| 5124772 |
Insulated gate bipolar transistor with a shortened carrier lifetime region |
Jun. 23, 1992 |
| 4963509 |
Gold diffusion method for semiconductor devices of high switching speed |
Oct. 16, 1990 |
| 4925812 |
Platinum diffusion process |
May. 15, 1990 |
| 4903102 |
Semiconductor photoelectric conversion device and method of making the same |
Feb. 20, 1990 |
| 4806497 |
Method for producing large-area power semiconductor components |
Feb. 21, 1989 |
| H569 |
Charge storage depletion region discharge protection |
Jan. 3, 1989 |
| 4792530 |
Process for balancing forward and reverse characteristic of thyristors |
Dec. 20, 1988 |
| 4777149 |
Method of manufacturing power MOSFET |
Oct. 11, 1988 |
| 4766482 |
Semiconductor device and method of making the same |
Aug. 23, 1988 |
| 4710477 |
Method for forming latch-up immune, multiple retrograde well high density CMOS FET |
Dec. 1, 1987 |
| 4684413 |
Method for increasing the switching speed of a semiconductor device by neutron irradiation |
Aug. 4, 1987 |
| 4662957 |
Method of producing a gate turn-off thyristor |
May. 5, 1987 |
| 4613519 |
Electron-beam-induced information storage in hydrogenated amorphous silicon device |
Sep. 23, 1986 |
| 4613381 |
Method for fabricating a thyristor |
Sep. 23, 1986 |
| 4585489 |
Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer |
Apr. 29, 1986 |
| 4402001 |
Semiconductor element capable of withstanding high voltage |
Aug. 30, 1983 |
| 4398054 |
Compensated amorphous silicon solar cell incorporating an insulating layer |
Aug. 9, 1983 |
| 4370180 |
Method for manufacturing power switching devices |
Jan. 25, 1983 |
| 4301323 |
Lead-doped silicon with enhanced semiconductor properties |
Nov. 17, 1981 |
| 4290188 |
Process for producing bipolar semiconductor device utilizing predeposition of dopant and a polycrystalline silicon-gold film followed by simultaneous diffusion |
Sep. 22, 1981 |
| 4273594 |
Gallium arsenide devices having reduced surface recombination velocity |
Jun. 16, 1981 |
| 4266990 |
Process for diffusion of aluminum into a semiconductor |
May. 12, 1981 |
| 4234355 |
Method for manufacturing a semiconductor element utilizing thermal neutron irradiation and annealing |
Nov. 18, 1980 |
| 4230791 |
Control of valley current in a unijunction transistor by electron irradiation |
Oct. 28, 1980 |
| 4224083 |
Dynamic isolation of conductivity modulation states in integrated circuits |
Sep. 23, 1980 |
| 4201598 |
Electron irradiation process of glass passivated semiconductor devices for improved reverse characteristics |
May. 6, 1980 |
| 4140560 |
Process for manufacture of fast recovery diodes |
Feb. 20, 1979 |
| 4107731 |
Silicon doped with cadmium to reduce lifetime |
Aug. 15, 1978 |
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