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Class Information
Number: 438/902
Name: Semiconductor device manufacturing: process > Capping layer
Description: Art collection involving the use of an overlayer serving to separate and protect an underlying region or layer from the environment.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5849630 |
Process for forming ohmic contact for III-V semiconductor devices |
Dec. 15, 1998 |
| 5795821 |
Process for improving the interface union among dielectric materials in an integrated circuit manufacture |
Aug. 18, 1998 |
| 5773347 |
Method of maufacturing field effect transistor |
Jun. 30, 1998 |
| 5744375 |
Capped anneal |
Apr. 28, 1998 |
| 5731226 |
Low temperature method of manufacturing epitaxial titanium silicide |
Mar. 24, 1998 |
| 5691247 |
Method for depositing a flow fill layer on an integrated circuit wafer |
Nov. 25, 1997 |
| 5686350 |
Method for fabricating defect-free compound semiconductor thin film on dielectric thin film |
Nov. 11, 1997 |
| 5656546 |
Self-aligned tin formation by N.sub.2.sup.+ implantation during two-step annealing Ti-salicidation |
Aug. 12, 1997 |
| 5599742 |
Interconnection forming method |
Feb. 4, 1997 |
| 5593924 |
Use of a capping layer to attain low titanium-silicide sheet resistance and uniform silicide thickness for sub-micron silicon and polysilicon lines |
Jan. 14, 1997 |
| 5525529 |
Method for reducing dopant diffusion |
Jun. 11, 1996 |
| 5523262 |
Rapid thermal annealing using thermally conductive overcoat |
Jun. 4, 1996 |
| 5482895 |
Method of manufacturing semiconductor devices having silicide electrodes |
Jan. 9, 1996 |
| 5478779 |
Electrically conductive projections and semiconductor processing method of forming same |
Dec. 26, 1995 |
| 5468678 |
Method of manufacturing P-type compound semiconductor |
Nov. 21, 1995 |
| 5378652 |
Method of making a through hole in multi-layer insulating films |
Jan. 3, 1995 |
| 5366928 |
Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body |
Nov. 22, 1994 |
| 5364818 |
Sog with moisture resistant protective capping layer |
Nov. 15, 1994 |
| 5336641 |
Rapid thermal annealing using thermally conductive overcoat |
Aug. 9, 1994 |
| 5326720 |
Method for producing silicon dioxide film which prevents escape of Si component to the environment |
Jul. 5, 1994 |
| 5326724 |
Oxide-capped titanium silicide formation |
Jul. 5, 1994 |
| 5324685 |
Method for fabricating a multilayer epitaxial structure |
Jun. 28, 1994 |
| 5316975 |
Method of forming multilevel interconnections in a semiconductor integrated circuit |
May. 31, 1994 |
| 5306662 |
Method of manufacturing P-type compound semiconductor |
Apr. 26, 1994 |
| 5268324 |
Modified silicon CMOS process having selectively deposited Si/SiGe FETS |
Dec. 7, 1993 |
| 5256550 |
Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer |
Oct. 26, 1993 |
| 5246878 |
Capping layer preventing deleterious effects of As--P exchange |
Sep. 21, 1993 |
| 5234861 |
Method for forming variable width isolation structures |
Aug. 10, 1993 |
| 5227328 |
Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations |
Jul. 13, 1993 |
| 5219788 |
Bilayer metallization cap for photolithography |
Jun. 15, 1993 |
| 5192715 |
Process for avoiding spin-on-glass cracking in high aspect ratio cavities |
Mar. 9, 1993 |
| 5185288 |
Epitaxial growth method |
Feb. 9, 1993 |
| 5139971 |
Anneal to decrease moisture absorbance of intermetal dielectrics |
Aug. 18, 1992 |
| 5124279 |
Integrated semiconductor laser producing light of different wavelengths at respective active regions |
Jun. 23, 1992 |
| 5084411 |
Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film |
Jan. 28, 1992 |
| 5047369 |
Fabrication of semiconductor devices using phosphosilicate glasses |
Sep. 10, 1991 |
| 4981814 |
Preparation of semiconductor devices |
Jan. 1, 1991 |
| 4971655 |
Protection of a refractory metal silicide during high-temperature processing using a dual-layer cap of silicon dioxide and silicon nitride |
Nov. 20, 1990 |
| 4960728 |
Homogenization anneal of II-VI compounds |
Oct. 2, 1990 |
| 4935384 |
Method of passivating semiconductor surfaces |
Jun. 19, 1990 |
| 4876210 |
Solution growth of lattice mismatched and solubility mismatched heterostructures |
Oct. 24, 1989 |
| 4742014 |
Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor |
May. 3, 1988 |
| 4661374 |
Method of making MOS VLSI semiconductor device with metal gate and clad source/drain |
Apr. 28, 1987 |
| 4647472 |
Process of producing a semiconductor device |
Mar. 3, 1987 |
| 4634474 |
Coating of III-V and II-VI compound semiconductors |
Jan. 6, 1987 |
| 4615766 |
Silicon cap for annealing gallium arsenide |
Oct. 7, 1986 |
| 4538342 |
Forming platinum contacts to in-based group III-V compound devices |
Sep. 3, 1985 |
| 4455351 |
Preparation of photodiodes |
Jun. 19, 1984 |
| 4298403 |
Ion-implanted evaporated germanium layers as n.sup.+ contacts to GaAs |
Nov. 3, 1981 |
| 4267014 |
Semiconductor encapsulant for annealing ion-implanted GaAs |
May. 12, 1981 |
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