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Class Information
Number: 438/902
Name: Semiconductor device manufacturing: process > Capping layer
Description: Art collection involving the use of an overlayer serving to separate and protect an underlying region or layer from the environment.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7211481 |
Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layer |
May. 1, 2007 |
| 7172960 |
Multi-layer film stack for extinction of substrate reflections during patterning |
Feb. 6, 2007 |
| 7141494 |
Method for reducing tungsten film roughness and improving step coverage |
Nov. 28, 2006 |
| 7091601 |
Method of fabricating an apparatus including a sealed cavity |
Aug. 15, 2006 |
| 7084060 |
Forming capping layer over metal wire structure using selective atomic layer deposition |
Aug. 1, 2006 |
| 7008885 |
Chemical treatment of semiconductor substrates |
Mar. 7, 2006 |
| 6972252 |
Method of improving adhesion between two dielectric films |
Dec. 6, 2005 |
| 6929831 |
Methods of forming nitride films |
Aug. 16, 2005 |
| 6913946 |
Method of making an ultimate low dielectric device |
Jul. 5, 2005 |
| 6884641 |
Site-specific methodology for localization and analyzing junction defects in mosfet devices |
Apr. 26, 2005 |
| 6838369 |
Method for forming contact hole of semiconductor device |
Jan. 4, 2005 |
| 6808975 |
Method for forming a self-aligned contact hole in a semiconductor device |
Oct. 26, 2004 |
| 6790778 |
Method for capping over a copper layer |
Sep. 14, 2004 |
| 6787462 |
Method of manufacturing semiconductor device having buried metal wiring |
Sep. 7, 2004 |
| 6784084 |
Method for fabricating semiconductor device capable of reducing seam generations |
Aug. 31, 2004 |
| 6784074 |
Defect-free semiconductor templates for epitaxial growth and method of making same |
Aug. 31, 2004 |
| 6774058 |
Chemical treatment of semiconductor substrates |
Aug. 10, 2004 |
| 6756321 |
Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant |
Jun. 29, 2004 |
| 6689673 |
Method for forming a gate with metal silicide |
Feb. 10, 2004 |
| 6660634 |
Method of forming reliable capped copper interconnects |
Dec. 9, 2003 |
| 6653166 |
Semiconductor device and method of making same |
Nov. 25, 2003 |
| 6645829 |
Silicon wafer with embedded optoelectronic material for monolithic OEIC |
Nov. 11, 2003 |
| 6562544 |
Method and apparatus for improving accuracy in photolithographic processing of substrates |
May. 13, 2003 |
| 6455424 |
Selective cap layers over recessed polysilicon plugs |
Sep. 24, 2002 |
| 6420214 |
Method of forming an integrated circuit device having cyanate ester buffer coat |
Jul. 16, 2002 |
| 6410427 |
Metal silicidation methods and methods for using same |
Jun. 25, 2002 |
| 6368885 |
Method for manufacturing a micromechanical component |
Apr. 9, 2002 |
| 6261887 |
Transistors with independently formed gate structures and method |
Jul. 17, 2001 |
| 6255213 |
Method of forming a structure upon a semiconductive substrate |
Jul. 3, 2001 |
| 6214713 |
Two step cap nitride deposition for forming gate electrodes |
Apr. 10, 2001 |
| 6211078 |
Method of improving resist adhesion for use in patterning conductive layers |
Apr. 3, 2001 |
| 6187632 |
Anneal technique for reducing amount of electronic trap in gate oxide film of transistor |
Feb. 13, 2001 |
| 6184158 |
Inductively coupled plasma CVD |
Feb. 6, 2001 |
| 6153542 |
Method of manufacturing semiconductor devices |
Nov. 28, 2000 |
| 6114186 |
Hydrogen silsesquioxane thin films for low capacitance structures in integrated circuits |
Sep. 5, 2000 |
| 6100184 |
Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer |
Aug. 8, 2000 |
| 6093643 |
Electrically conductive projections and semiconductor processing method of forming same |
Jul. 25, 2000 |
| 6087276 |
Method of making a TFT having an ion plated silicon dioxide capping layer |
Jul. 11, 2000 |
| 6083817 |
Cobalt silicidation using tungsten nitride capping layer |
Jul. 4, 2000 |
| 6060343 |
Method of forming an integrated circuit device having cyanate ester buffer coat |
May. 9, 2000 |
| 6054376 |
Method of sealing a semiconductor substrate |
Apr. 25, 2000 |
| 6007624 |
Process for controlling autodoping during epitaxial silicon deposition |
Dec. 28, 1999 |
| 5970370 |
Manufacturing capping layer for the fabrication of cobalt salicide structures |
Oct. 19, 1999 |
| 5945348 |
Method for reducing the heights of interconnects on a projecting region with a smaller reduction in the heights of other interconnects |
Aug. 31, 1999 |
| 5932484 |
Thin film semiconductor device for active matrix panel |
Aug. 3, 1999 |
| 5891800 |
Method for depositing a flow fill layer on an integrated circuit wafer |
Apr. 6, 1999 |
| 5868862 |
Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media |
Feb. 9, 1999 |
| 5868856 |
Method for removing inorganic contamination by chemical derivitization and extraction |
Feb. 9, 1999 |
| 5858880 |
Method of treating a semi-conductor wafer |
Jan. 12, 1999 |
| 5849633 |
Electrically conductive projections and semiconductor processing method of forming same |
Dec. 15, 1998 |
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