| |
 |
|
Class Information
Number: 438/901
Name: Semiconductor device manufacturing: process > Capacitive junction
Description: Art collection involving the construction of a barrier layer junction possessing capacitive properties.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7309875 |
Nanocrystal protective layer for crossbar molecular electronic devices |
Dec. 18, 2007 |
| 7285460 |
Semiconductor device and method of manufacturing the same |
Oct. 23, 2007 |
| 7033900 |
Protection of integrated circuit gates during metallization processes |
Apr. 25, 2006 |
| 6949477 |
Method of fabricating a capacitive element for a semiconductor device |
Sep. 27, 2005 |
| 6143614 |
Monolithic inductor |
Nov. 7, 2000 |
| 5843829 |
Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof |
Dec. 1, 1998 |
| 5554552 |
PN junction floating gate EEPROM, flash EPROM device and method of manufacture thereof |
Sep. 10, 1996 |
| 5519243 |
Semiconductor device and manufacturing method thereof |
May. 21, 1996 |
| 5492856 |
Method of forming a semiconductor device having a LC element |
Feb. 20, 1996 |
| 5338691 |
Method of making a photodiode with reduced junction area |
Aug. 16, 1994 |
| 5334547 |
Method of manufacturing a semiconductor memory having an increased cell capacitance in a restricted cell area |
Aug. 2, 1994 |
| 5262353 |
Process for forming a structure which electrically shields conductors |
Nov. 16, 1993 |
| 5182223 |
Method of making an integrated circuit with capacitor |
Jan. 26, 1993 |
| 5162264 |
Integrated circuit package |
Nov. 10, 1992 |
| 5135889 |
Method for forming a shielding structure for decoupling signal traces in a semiconductor |
Aug. 4, 1992 |
| 5053352 |
Method of forming an integrated circuit with pn-junction capacitor |
Oct. 1, 1991 |
| 4999309 |
Aluminum-implant leakage reduction |
Mar. 12, 1991 |
| 4853348 |
Process for manufacture of a semiconductor memory device |
Aug. 1, 1989 |
| 4505766 |
Method of fabricating a semiconductor device utilizing simultaneous outdiffusion and epitaxial deposition |
Mar. 19, 1985 |
| 4476623 |
Method of fabricating a bipolar dynamic memory cell |
Oct. 16, 1984 |
| 4427457 |
Method of making depthwise-oriented integrated circuit capacitors |
Jan. 24, 1984 |
| 4326332 |
Method of making a high density V-MOS memory array |
Apr. 27, 1982 |
| 4314359 |
Semiconductor memory device |
Feb. 2, 1982 |
| 4227297 |
Method for producing a single transistor storage cell |
Oct. 14, 1980 |
| 4222816 |
Method for reducing parasitic capacitance in integrated circuit structures |
Sep. 16, 1980 |
| 4194283 |
Process for the production of a single transistor memory cell |
Mar. 25, 1980 |
| 4116720 |
Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance |
Sep. 26, 1978 |
| 3975818 |
Method of forming closely spaced electrodes onto semiconductor device |
Aug. 24, 1976 |
|
|
|
