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Class Information
Number: 438/900
Name: Semiconductor device manufacturing: process > Bulk effect device making
Description: Art collection involving the construction of a semiconductor device whose electrical characteristics and electronic properties are exhibited throughout the entire body of the material, rather than in just a localized region thereof (e.g., the surface).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7589342 |
Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same |
Sep. 15, 2009 |
| 7582546 |
Device with damaged breakdown layer |
Sep. 1, 2009 |
| 7579616 |
Four-terminal programmable via-containing structure and method of fabricating same |
Aug. 25, 2009 |
| 7569844 |
Memory cell sidewall contacting side electrode |
Aug. 4, 2009 |
| 7541608 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells |
Jun. 2, 2009 |
| 7498600 |
Variable resistance random access memory device and a method of fabricating the same |
Mar. 3, 2009 |
| 7462857 |
Memory device including resistance-changing function body |
Dec. 9, 2008 |
| 7449710 |
Vacuum jacket for phase change memory element |
Nov. 11, 2008 |
| 7422985 |
Method for reducing dielectric overetch using a dielectric etch stop at a planar surface |
Sep. 9, 2008 |
| 7397060 |
Pipe shaped phase change memory |
Jul. 8, 2008 |
| 7393798 |
Resistance variable memory with temperature tolerant materials |
Jul. 1, 2008 |
| 7394087 |
Phase-changeable memory devices and methods of forming the same |
Jul. 1, 2008 |
| 7381982 |
Method for fabricating chalcogenide-applied memory |
Jun. 3, 2008 |
| 7378678 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells |
May. 27, 2008 |
| 7368384 |
Film formation apparatus and method of using the same |
May. 6, 2008 |
| 7365355 |
Programmable matrix array with phase-change material |
Apr. 29, 2008 |
| 7354793 |
Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element |
Apr. 8, 2008 |
| 7348209 |
Resistance variable memory device and method of fabrication |
Mar. 25, 2008 |
| 7339185 |
Phase change memory device and method for forming the same |
Mar. 4, 2008 |
| 7316746 |
Crystals for a semiconductor radiation detector and method for making the crystals |
Jan. 8, 2008 |
| 7307267 |
Electric device with phase change material and parallel heater |
Dec. 11, 2007 |
| 7256415 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells |
Aug. 14, 2007 |
| 7214632 |
Using selective deposition to form phase-change memory cells |
May. 8, 2007 |
| 7183567 |
Using selective deposition to form phase-change memory cells |
Feb. 27, 2007 |
| 7064344 |
Barrier material encapsulation of programmable material |
Jun. 20, 2006 |
| 7049154 |
Vapor phase growth method by controlling the heat output in the gas introduction region |
May. 23, 2006 |
| 7041611 |
Enhancement of fabrication yields of nanomechanical devices by thin film deposition |
May. 9, 2006 |
| 6936837 |
Film bulk acoustic resonator |
Aug. 30, 2005 |
| 6830952 |
Spacer chalcogenide memory method and device |
Dec. 14, 2004 |
| 6815270 |
Thin film transistor formed by an etching process with high anisotropy |
Nov. 9, 2004 |
| 6787390 |
Electrical and thermal contact for use in semiconductor devices |
Sep. 7, 2004 |
| 6692978 |
Methods for marking a bare semiconductor die |
Feb. 17, 2004 |
| 6690026 |
Method of fabricating a three-dimensional array of active media |
Feb. 10, 2004 |
| 6673647 |
Method for growing a solid type II-VI semiconductor material |
Jan. 6, 2004 |
| 6653211 |
Semiconductor substrate, SOI substrate and manufacturing method therefor |
Nov. 25, 2003 |
| 6605821 |
Phase change material electronic memory structure and method for forming |
Aug. 12, 2003 |
| 6590236 |
Semiconductor structure for use with high-frequency signals |
Jul. 8, 2003 |
| 6569705 |
Metal structure for a phase-change memory device |
May. 27, 2003 |
| 6548397 |
Electrical and thermal contact for use in semiconductor devices |
Apr. 15, 2003 |
| 6545287 |
Using selective deposition to form phase-change memory cells |
Apr. 8, 2003 |
| 6495395 |
Electrical and thermal contact for use in semiconductor devices |
Dec. 17, 2002 |
| 6294404 |
Semiconductor integrated circuit having function of reducing a power consumption and semiconductor integrated circuit system comprising this semiconductor integrated circuit |
Sep. 25, 2001 |
| H1835 |
Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources |
Feb. 1, 2000 |
| 5985689 |
Method of fabricating photoelectric conversion device having at least one step-back layer |
Nov. 16, 1999 |
| 5920788 |
Chalcogenide memory cell with a plurality of chalcogenide electrodes |
Jul. 6, 1999 |
| 5914180 |
Magnetic recording medium |
Jun. 22, 1999 |
| 5418181 |
Method of fabricating diode using grid recess |
May. 23, 1995 |
| 5374589 |
Process of making a bistable photoconductive component |
Dec. 20, 1994 |
| 5360981 |
Amorphous silicon memory |
Nov. 1, 1994 |
| 5256579 |
Tunable-frequency Gunn diodes fabrication with focused ion beams |
Oct. 26, 1993 |
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