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Class Information
Number: 438/793
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate > Silicon nitride formation > Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) > Organic reactant
Description: Processes wherein a reactant compound utilized during the deposition of silicon nitride is an organic material (e.g., organo-siloxane, etc.).

Patents under this class:
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Patent Number Title Of Patent Date Issued
6596652 Method of fabricating low dielectric constant film Jul. 22, 2003
6573196 Method of depositing organosilicate layers Jun. 3, 2003
6521544 Method of forming an ultra thin dielectric film Feb. 18, 2003
6500772 Methods and materials for depositing films on semiconductor substrates Dec. 31, 2002
6495447 Use of hydrogen doping for protection of low-k dielectric layers Dec. 17, 2002
6492240 Method for forming improved high resistance resistor by treating the surface of polysilicon layer Dec. 10, 2002
6465373 Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer Oct. 15, 2002
6455421 Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition Sep. 24, 2002
6399489 Barrier layer deposition using HDP-CVD Jun. 4, 2002
6333278 Semiconductor device and manufacturing method thereof Dec. 25, 2001
6225241 Catalytic deposition method for a semiconductor surface passivation film May. 1, 2001
6221734 Method of reducing CMP dishing effect Apr. 24, 2001
6156673 Process for producing a ceramic layer Dec. 5, 2000
5972804 Process for forming a semiconductor device Oct. 26, 1999
5968611 Silicon nitrogen-based films and method of making the same Oct. 19, 1999
5904567 Layer member forming method May. 18, 1999
5817549 Method for manufacturing a semiconductor device Oct. 6, 1998
5795820 Method for simplifying the manufacture of an interlayer dielectric stack Aug. 18, 1998
5591494 Deposition of silicon nitrides by plasma-enhanced chemical vapor deposition Jan. 7, 1997
5578530 Manufacturing method of semiconductor device which includes forming a silicon nitride layer using a Si, N, and F containing compound Nov. 26, 1996
5508067 Deposition of silicon nitride by plasma-enchanced chemical vapor deposition Apr. 16, 1996
5302555 Anisotropic deposition of dielectrics Apr. 12, 1994
5234869 Method of manufacturing silicon nitride film Aug. 10, 1993
5040046 Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby Aug. 13, 1991
4894352 Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride Jan. 16, 1990
4877641 Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate Oct. 31, 1989
4863755 Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors Sep. 5, 1989
4702936 Gas-phase growth process Oct. 27, 1987
4546008 Method for forming a deposition film Oct. 8, 1985

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