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Class Information
Number: 438/793
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate > Silicon nitride formation > Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) > Organic reactant
Description: Processes wherein a reactant compound utilized during the deposition of silicon nitride is an organic material (e.g., organo-siloxane, etc.).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8637396 Dielectric barrier deposition using oxygen containing precursor Jan. 28, 2014
8580697 CVD flowable gap fill Nov. 12, 2013
8563443 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen Oct. 22, 2013
8541318 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Sep. 24, 2013
8530361 Process for producing silicon and oxide films from organoaminosilane precursors Sep. 10, 2013
8329599 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen Dec. 11, 2012
8242032 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Aug. 14, 2012
8227358 Silicon precursors and method for low temperature CVD of silicon-containing films Jul. 24, 2012
8119545 Forming a silicon nitride film by plasma CVD Feb. 21, 2012
7998882 Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition step Aug. 16, 2011
7985188 Vessel, coating, inspection and processing apparatus Jul. 26, 2011
7951730 Decreasing the etch rate of silicon nitride by carbon addition May. 31, 2011
7923378 Film formation method and apparatus for forming silicon-containing insulating film Apr. 12, 2011
7875556 Precursors for CVD silicon carbo-nitride and silicon nitride films Jan. 25, 2011
7863203 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Jan. 4, 2011
7858294 Method to restore hydrophobicity in dielectric films and materials Dec. 28, 2010
7807586 Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process Oct. 5, 2010
7790634 Method for depositing and curing low-k films for gapfill and conformal film applications Sep. 7, 2010
7790635 Method to increase the compressive stress of PECVD dielectric films Sep. 7, 2010
7781352 Method for forming inorganic silazane-based dielectric film Aug. 24, 2010
7662730 Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof Feb. 16, 2010
7651961 Method for forming strained silicon nitride films and a device containing such films Jan. 26, 2010
7601619 Method and apparatus for plasma processing Oct. 13, 2009
7592273 Semiconductor device with hydrogen barrier and method therefor Sep. 22, 2009
7585790 Method for forming semiconductor device Sep. 8, 2009
7541234 Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas Jun. 2, 2009
7510984 Method of forming silicon nitride film and method of manufacturing semiconductor device Mar. 31, 2009
7501355 Decreasing the etch rate of silicon nitride by carbon addition Mar. 10, 2009
7473655 Method for silicon based dielectric chemical vapor deposition Jan. 6, 2009
7387971 Fabricating method for flat panel display device Jun. 17, 2008
7365029 Method for silicon nitride chemical vapor deposition Apr. 29, 2008
7138068 Printed circuit patterned embedded capacitance layer Nov. 21, 2006
7129187 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films Oct. 31, 2006
7098061 Forming interconnects using locally deposited solvents Aug. 29, 2006
7067414 Low k interlevel dielectric layer fabrication methods Jun. 27, 2006
7067415 Low k interlevel dielectric layer fabrication methods Jun. 27, 2006
7001844 Material for contact etch layer to enhance device performance Feb. 21, 2006
6875709 Application of a supercritical CO2 system for curing low k dielectric materials Apr. 5, 2005
6849562 Method of depositing a low k dielectric barrier film for copper damascene application Feb. 1, 2005
6828256 Methods for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands Dec. 7, 2004
6812164 Method and apparatus for ionization film formation Nov. 2, 2004
6777349 Hermetic silicon carbide Aug. 17, 2004
6759346 Method of forming dielectric layers Jul. 6, 2004
6746970 Method of forming a fluorocarbon polymer film on a substrate using a passivation layer Jun. 8, 2004
6737365 Forming a porous dielectric layer May. 18, 2004
6713390 Barrier layer deposition using HDP-CVD Mar. 30, 2004
6673709 Formation of an aluminide coating, incorporating a reactive element, on a metal substrate Jan. 6, 2004
6673725 Semiconductor device and method of manufacturing the same Jan. 6, 2004
6624094 Method of manufacturing an interlayer dielectric film using vacuum ultraviolet CVD with Xe2 excimer lamp and silicon atoms Sep. 23, 2003
6620741 Method for controlling etch bias of carbon doped oxide films Sep. 16, 2003

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