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Class Information
Number: 438/792
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate > Silicon nitride formation > Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
Description: Processes wherein the silicon nitride is deposited using irradiation of electromagnetic or wave energy.










Sub-classes under this class:

Class Number Class Name Patents
438/793 Organic reactant 79


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8669185 Method of tailoring conformality of Si-containing film Mar. 11, 2014
8647992 Flowable dielectric using oxide liner Feb. 11, 2014
8592328 Method for depositing a chlorine-free conformal sin film Nov. 26, 2013
8586487 Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films Nov. 19, 2013
8580697 CVD flowable gap fill Nov. 12, 2013
8575042 Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus Nov. 5, 2013
8569184 Method for forming single-phase multi-element film by PEALD Oct. 29, 2013
8563445 Conformal layers by radical-component CVD Oct. 22, 2013
8563443 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen Oct. 22, 2013
8557667 Spacer for a gate electrode having tensile stress and a method of forming the same Oct. 15, 2013
8546273 Methods and apparatus for forming nitrogen-containing layers Oct. 1, 2013
8546276 Deposition of group IV metal-containing films at high temperature Oct. 1, 2013
8547085 Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber Oct. 1, 2013
8536014 Self aligned silicide device fabrication Sep. 17, 2013
8497214 Semiconductor device manufacturing method Jul. 30, 2013
8497515 LED device with thermoelectric module Jul. 30, 2013
8481433 Methods and apparatus for forming nitrogen-containing layers Jul. 9, 2013
8415259 Method of depositing dielectric film by modified PEALD method Apr. 9, 2013
8367550 Fabricating low contact resistance conductive layer in semiconductor device Feb. 5, 2013
8329575 Fabrication of through-silicon vias on silicon wafers Dec. 11, 2012
8318614 Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus Nov. 27, 2012
8312840 Substrate processing apparatus and method Nov. 20, 2012
8278195 Plasma CVD apparatus Oct. 2, 2012
8272348 Method for plasma deposition and plasma CVD system Sep. 25, 2012
8236674 Substrate processing method and semiconductor device manufacturing method including a proton injection step and a laser irradiation step Aug. 7, 2012
8231800 Plasma processing apparatus and method Jul. 31, 2012
8232217 Film deposition apparatus, method of manufacturing a semiconductor device, and method of coating the film deposition apparatus Jul. 31, 2012
8202810 Low-H plasma treatment with N.sub.2 anneal for electronic memory devices Jun. 19, 2012
8178436 Adhesion and electromigration performance at an interface between a dielectric and metal May. 15, 2012
8178448 Film formation method and apparatus for semiconductor process May. 15, 2012
8173554 Method of depositing dielectric film having Si-N bonds by modified peald method May. 8, 2012
8168548 UV-assisted dielectric formation for devices with strained germanium-containing layers May. 1, 2012
8138104 Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure Mar. 20, 2012
8129291 Method of depositing dielectric film having Si-N bonds by modified peald method Mar. 6, 2012
8124484 Forming a MOS memory device having a dielectric film laminate as a charge accumulation region Feb. 28, 2012
8119545 Forming a silicon nitride film by plasma CVD Feb. 21, 2012
8119544 Film formation method and apparatus for semiconductor process Feb. 21, 2012
8119540 Method of forming a stressed passivation film using a microwave-assisted oxidation process Feb. 21, 2012
8114790 Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus Feb. 14, 2012
8105959 Method for manufacturing a semiconductor device having a nitrogen-containing gate insulating film Jan. 31, 2012
8101476 Stress memorization dielectric optimized for NMOS and PMOS Jan. 24, 2012
8101531 Plasma-activated deposition of conformal films Jan. 24, 2012
8080290 Film formation method and apparatus for semiconductor process Dec. 20, 2011
8053338 Plasma CVD apparatus Nov. 8, 2011
8030220 Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer Oct. 4, 2011
8030224 Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser Oct. 4, 2011
7988875 Differential etch rate control of layers deposited by chemical vapor deposition Aug. 2, 2011
7989365 Remote plasma source seasoning Aug. 2, 2011
7985188 Vessel, coating, inspection and processing apparatus Jul. 26, 2011
7985674 SiH.sub.4 soak for low hydrogen SiN deposition to improve flash memory device performance Jul. 26, 2011

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