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Class Information
Number: 438/788
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate > Silicon oxide formation > Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
Description: Processes wherein the silicon oxide is deposited using irradiation of electromagnetic or wave energy.

Sub-classes under this class:

Class Number Class Name Patents
438/789 Organic reactant 441

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
6194037 Method of plasma processing a substrate placed on a substrate table Feb. 27, 2001
6191004 Method of fabricating shallow trench isolation using high density plasma CVD Feb. 20, 2001
6187683 Method for final passivation of integrated circuit Feb. 13, 2001
6184158 Inductively coupled plasma CVD Feb. 6, 2001
6180540 Method for forming a stabilized fluorosilicate glass layer Jan. 30, 2001
6177362 Fabrication method for gate structure having gate dielectric layers of different thickness Jan. 23, 2001
6169039 Electron bean curing of low-k dielectrics in integrated circuits Jan. 2, 2001
6168961 Process for the preparation of epitaxial wafers for resistivity measurements Jan. 2, 2001
6165917 Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD Dec. 26, 2000
6166427 Integration of low-K SiOF as inter-layer dielectric for AL-gapfill application Dec. 26, 2000
6162723 Method of fabricating a semiconductor integrated circuit device having an interlevel dielectric layer with voids between narrowly-spaced wiring lines Dec. 19, 2000
6162666 Method to form a DRAM capacitor using low temperature reoxidation Dec. 19, 2000
6156149 In situ deposition of a dielectric oxide layer and anti-reflective coating Dec. 5, 2000
6156675 Method for enhanced dielectric film uniformity Dec. 5, 2000
6153512 Process to improve adhesion of HSQ to underlying materials Nov. 28, 2000
6153540 Method of forming phosphosilicate glass having a high wet-etch rate Nov. 28, 2000
6150285 Method for simultaneous deposition and sputtering of TEOS Nov. 21, 2000
6146988 Method of making a semiconductor device comprising copper interconnects with reduced in-line copper diffusion Nov. 14, 2000
6143672 Method of reducing metal voidings in 0.25 .mu.m AL interconnect Nov. 7, 2000
6143673 Method for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOS Nov. 7, 2000
6139923 Method and apparatus for reducing particle contamination in a substrate processing chamber Oct. 31, 2000
6136726 Method of forming interlayer film by altering fluidity of deposited layers Oct. 24, 2000
6133162 Method of forming a film by using plasmanized process gas containing gaseous H.sub.2 O and an auxiliary gas in a semiconductor device Oct. 17, 2000
6127284 Method of manufacturing a semiconductor device having nitrogen-bearing oxide gate insulating layer Oct. 3, 2000
6127256 Semiconductor device and method of manufacturing the same Oct. 3, 2000
6127285 Interlevel dielectrics with reduced dielectric constant Oct. 3, 2000
6124218 Method for cleaning wafer surface and a method for forming thin oxide layers Sep. 26, 2000
6124216 Method of making intermetal dielectric layers having a low dielectric constant Sep. 26, 2000
6121163 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface Sep. 19, 2000
6117799 Deposition of super thin PECVD SiO.sub.2 in multiple deposition station system Sep. 12, 2000
6107214 Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers Aug. 22, 2000
6103639 Method of reducing pin holes in a nitride passivation layer Aug. 15, 2000
6100205 Intermetal dielectric layer formation with low dielectric constant using high density plasma chemical vapor deposition process Aug. 8, 2000
6100579 Insulating film for use in semiconductor device Aug. 8, 2000
6096661 Method for depositing silicon dioxide using low temperatures Aug. 1, 2000
6093660 Inductively coupled plasma chemical vapor deposition technology Jul. 25, 2000
6087276 Method of making a TFT having an ion plated silicon dioxide capping layer Jul. 11, 2000
6087249 Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation Jul. 11, 2000
6083569 Discharging a wafer after a plasma process for dielectric deposition Jul. 4, 2000
6083851 HSQ with high plasma etching resistance surface for borderless vias Jul. 4, 2000
6080639 Semiconductor device containing P-HDP interdielectric layer Jun. 27, 2000
6077764 Process for depositing high deposition rate halogen-doped silicon oxide layer Jun. 20, 2000
6077718 Method for forming deposited film Jun. 20, 2000
6077751 Method of rapid thermal processing (RTP) of ion implanted silicon Jun. 20, 2000
6069094 Method for depositing a thin film May. 30, 2000
6057251 Method for forming interlevel dielectric layer in semiconductor device using electron beams May. 2, 2000
6054735 Very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technologies Apr. 25, 2000
6048801 Method of forming interlayer film Apr. 11, 2000
6042901 Method for depositing fluorine doped silicon dioxide films Mar. 28, 2000
6037278 Method of manufacturing semiconductor devices having multi-level wiring structure Mar. 14, 2000

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

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