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Class Information
Number: 438/788
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate > Silicon oxide formation > Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
Description: Processes wherein the silicon oxide is deposited using irradiation of electromagnetic or wave energy.










Sub-classes under this class:

Class Number Class Name Patents
438/789 Organic reactant 441


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
6429147 Method for making an insulating film Aug. 6, 2002
6426305 Patterned plasma nitridation for selective epi and silicide formation Jul. 30, 2002
6426285 Method to solve intermetallic dielectric cracks in integrated circuit devices Jul. 30, 2002
6423653 Reduction of plasma damage for HDP-CVD PSG process Jul. 23, 2002
6418875 Method of improving adhesion of cap oxide to nanoporous silica for integrated circuit fabrication Jul. 16, 2002
6417079 Discharge electrode, high-frequency plasma generator, method of power feeding, and method of manufacturing semiconductor device Jul. 9, 2002
6413317 Substrate processing method and substrate processing apparatus Jul. 2, 2002
6413886 Method for fabricating a microtechnical structure Jul. 2, 2002
6410462 Method of making low-K carbon doped silicon oxide Jun. 25, 2002
6410457 Method for improving barrier layer adhesion to HDP-FSG thin films Jun. 25, 2002
6407013 Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties Jun. 18, 2002
6407012 Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display and infrared irradiating device Jun. 18, 2002
6403501 Method of controlling FSG deposition rate in an HDP reactor Jun. 11, 2002
6403464 Method to reduce the moisture content in an organic low dielectric constant material Jun. 11, 2002
6399522 PE-silane oxide particle performance improvement Jun. 4, 2002
6399520 Semiconductor manufacturing method and semiconductor manufacturing apparatus Jun. 4, 2002
6383954 Process gas distribution for forming stable fluorine-doped silicate glass and other films May. 7, 2002
6383953 Apparatus for fabricating semiconductor device and method for fabricating semiconductor using the same May. 7, 2002
6380058 Method and apparatus for manufacturing semiconductor device Apr. 30, 2002
6380612 Thin film formed by inductively coupled plasma Apr. 30, 2002
6376391 Pulsed or tailored bias for filling gaps with low dielectric constant material Apr. 23, 2002
6376340 Methods for forming polycrystalline silicon film Apr. 23, 2002
6372664 Crack resistant multi-layer dielectric layer and method for formation thereof Apr. 16, 2002
6372670 Method and apparatus for forming an interlayer insulating film, and semiconductor device Apr. 16, 2002
6372671 Surface stabilization of silicon rich silica glass using increased post deposition delay Apr. 16, 2002
6368988 Combined gate cap or digit line and spacer deposition using HDP Apr. 9, 2002
6368987 Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions Apr. 9, 2002
6365959 Semiconductor device and method for fabricating the same Apr. 2, 2002
6361837 Method and system for modifying and densifying a porous film Mar. 26, 2002
6358867 Orientation independent oxidation of silicon Mar. 19, 2002
6358816 Method for uniform polish in microelectronic device Mar. 19, 2002
6355581 Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capability Mar. 12, 2002
6355580 Ion-assisted oxidation methods and the resulting structures Mar. 12, 2002
6350706 Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same Feb. 26, 2002
6348421 Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD Feb. 19, 2002
6346302 High density plasma enhanced chemical vapor deposition method Feb. 12, 2002
6346488 Process to provide enhanced resistance to cracking and to further reduce the dielectric constant of a low dielectric constant dielectric film of an integrated circuit structure by implantation Feb. 12, 2002
6346490 Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps Feb. 12, 2002
6344363 Method of making ferroelectric film with protective cover film against hydrogen and moisture Feb. 5, 2002
6340644 Method for applying a protecting lacquer on a wafer Jan. 22, 2002
6335261 Directional CVD process with optimized etchback Jan. 1, 2002
6335288 Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD Jan. 1, 2002
6333218 Method of etching contacts with reduced oxide stress Dec. 25, 2001
6333263 Method of reducing stress corrosion induced voiding of patterned metal layers Dec. 25, 2001
6331494 Deposition of low dielectric constant thin film without use of an oxidizer Dec. 18, 2001
6326320 Method for forming oxide layer on conductor plug of trench structure Dec. 4, 2001
6326282 Method of forming trench isolation in a semiconductor device and structure formed thereby Dec. 4, 2001
6326064 Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content Dec. 4, 2001
6325017 Apparatus for forming a high dielectric film Dec. 4, 2001
6323141 Method for forming anti-reflective coating layer with enhanced film thickness uniformity Nov. 27, 2001

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15










 
 
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