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Class Information
Number: 438/787
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate > Silicon oxide formation
Description: Processes wherein the deposited insulative material is a compound of silicon and oxygen.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622369 |
Device isolation technology on semiconductor substrate |
Nov. 24, 2009 |
| 7618833 |
Method for pre-treating epitaxial layer, method for evaluating epitaxial layer, and apparatus for evaluating epitaxial layer |
Nov. 17, 2009 |
| 7605086 |
Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
Oct. 20, 2009 |
| 7605095 |
Heat processing method and apparatus for semiconductor process |
Oct. 20, 2009 |
| 7605052 |
Method of forming an integrated circuit having a device wafer with a diffused doped backside layer |
Oct. 20, 2009 |
| 7605071 |
Controlling lateral distribution of air gaps in interconnects |
Oct. 20, 2009 |
| 7601650 |
Carbon nanotube device and process for manufacturing same |
Oct. 13, 2009 |
| 7589030 |
Liquid crystal display device and fabricating method thereof |
Sep. 15, 2009 |
| 7585788 |
Rare earth element-doped oxide precursor with silicon nanocrystals |
Sep. 8, 2009 |
| 7582573 |
Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same |
Sep. 1, 2009 |
| 7582540 |
Method for manufacturing SOI wafer |
Sep. 1, 2009 |
| 7582969 |
Hermetic interconnect structure and method of manufacture |
Sep. 1, 2009 |
| 7582575 |
Method for forming insulation film |
Sep. 1, 2009 |
| 7582495 |
Inkjet head, method for producing inkjet head, inkjet recorder and inkjet coater |
Sep. 1, 2009 |
| 7579271 |
Method for forming low dielectric constant fluorine-doped layers |
Aug. 25, 2009 |
| 7572741 |
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
Aug. 11, 2009 |
| 7566482 |
SOI by oxidation of porous silicon |
Jul. 28, 2009 |
| 7557048 |
Methods of forming semiconductor constructions |
Jul. 7, 2009 |
| 7550356 |
Method of fabricating strained-silicon transistors |
Jun. 23, 2009 |
| 7547643 |
Techniques promoting adhesion of porous low K film to underlying barrier layer |
Jun. 16, 2009 |
| 7541295 |
Method of manufacturing semiconductor device |
Jun. 2, 2009 |
| 7541297 |
Method and system for improving dielectric film quality for void free gap fill |
Jun. 2, 2009 |
| 7538047 |
Method of manufacturing semiconductor device |
May. 26, 2009 |
| 7531466 |
Metal organic deposition precursor solution synthesis and terbium-doped SiO.sub.2 thin film deposition |
May. 12, 2009 |
| 7531891 |
Semiconductor device |
May. 12, 2009 |
| 7528043 |
Scalable gate and storage dielectric |
May. 5, 2009 |
| 7514374 |
Method for manufacturing flat substrates |
Apr. 7, 2009 |
| 7510982 |
Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles |
Mar. 31, 2009 |
| 7507647 |
Method of manufacturing a high voltage semiconductor device including a deep well and a gate oxide layer simultaneously |
Mar. 24, 2009 |
| 7507675 |
Device manufacturing method and device |
Mar. 24, 2009 |
| 7504339 |
Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits |
Mar. 17, 2009 |
| 7491656 |
Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film |
Feb. 17, 2009 |
| 7491653 |
Metal-free catalysts for pulsed deposition layer process for conformal silica laminates |
Feb. 17, 2009 |
| 7488693 |
Method for producing silicon oxide film |
Feb. 10, 2009 |
| 7482244 |
Method of preventing a peeling issue of a high stressed thin film |
Jan. 27, 2009 |
| 7482284 |
Deposition methods for forming silicon oxide layers |
Jan. 27, 2009 |
| 7470635 |
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, methods of forming trench isolation in the fabrication of integrated circuitry, methods of d |
Dec. 30, 2008 |
| 7465679 |
Insulating film and method of producing semiconductor device |
Dec. 16, 2008 |
| 7465680 |
Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO.sub.2 |
Dec. 16, 2008 |
| 7465682 |
Method and apparatus for processing organosiloxane film |
Dec. 16, 2008 |
| 7462519 |
Semiconductor device, method of fabricating same, and, electrooptical device |
Dec. 9, 2008 |
| 7462568 |
Method for forming interlayer dielectric film in semiconductor device |
Dec. 9, 2008 |
| 7459405 |
Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
Dec. 2, 2008 |
| 7456116 |
Gap-fill depositions in the formation of silicon containing dielectric materials |
Nov. 25, 2008 |
| 7452830 |
Semiconductor devices and methods for manufacturing the same |
Nov. 18, 2008 |
| 7446055 |
Aerosol misted deposition of low dielectric organosilicate films |
Nov. 4, 2008 |
| 7435683 |
Apparatus and method for selectively recessing spacers on multi-gate devices |
Oct. 14, 2008 |
| 7435690 |
Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy |
Oct. 14, 2008 |
| 7429541 |
Method of forming trench isolation in the fabrication of integrated circuitry |
Sep. 30, 2008 |
| 7425505 |
Use of silyating agents |
Sep. 16, 2008 |
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