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Class Information
Number: 438/778
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate
Description: Processes wherein an insulative coating is formed upon the semiconductor substrate solely by the deposition of externally supplied material.

Sub-classes under this class:

Class Number Class Name Patents
438/779 Compound semiconductor substrate 170
438/780 Depositing organic material (e.g., polymer, etc.) 1,327
438/783 Insulative material having impurity (e.g., for altering physical characteristics, etc.) 486
438/785 Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 909
438/791 Silicon nitride formation 578
438/787 Silicon oxide formation 1,006
438/786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) 458
438/782 With substrate handling during coating (e.g., immersion, spinning, etc.) 610

Patents under this class:

Patent Number Title Of Patent Date Issued
7790629 Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor Sep. 7, 2010
7790628 Method of forming high dielectric constant films using a plurality of oxidation sources Sep. 7, 2010
7776763 In-situ formation of oxidized aluminum nitride films Aug. 17, 2010
7776762 Zirconium-doped tantalum oxide films Aug. 17, 2010
7776761 Method of fabricating semiconductor device having multiple gate insulating layer Aug. 17, 2010
7776731 Method of removing defects from a dielectric material in a semiconductor Aug. 17, 2010
7772132 Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the same Aug. 10, 2010
7772131 Method of fabricating semiconductor device Aug. 10, 2010
7772130 Insulation film forming method, insulation film forming system, and semiconductor device manufacturing method Aug. 10, 2010
7770516 Apparatus and method for forming pattern Aug. 10, 2010
7767589 Passivation layer for a circuit device and method of manufacture Aug. 3, 2010
7763540 Method of forming a silicided gate utilizing a CMP stack Jul. 27, 2010
7763317 High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces Jul. 27, 2010
7759718 Method manufacturing capacitor dielectric Jul. 20, 2010
7758920 Method and apparatus for forming silicon-containing insulating film Jul. 20, 2010
7754510 Phase-separated dielectric structure fabrication process Jul. 13, 2010
7749920 Low dielectric constant films and manufacturing method thereof, as well as electronic parts using the same Jul. 6, 2010
7749911 Method for forming an improved T-shaped gate structure Jul. 6, 2010
7745350 Impurity control in HDP-CVD DEP/ETCH/DEP processes Jun. 29, 2010
7745346 Method for improving process control and film conformality of PECVD film Jun. 29, 2010
7732347 Semiconductor device and fabrication process of semiconductor device Jun. 8, 2010
7732337 Method for manufacturing the shallow trench isolation structure Jun. 8, 2010
7727906 H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift Jun. 1, 2010
7727905 Zirconium-doped tantalum oxide films Jun. 1, 2010
7723243 Multi-layered structure forming method, method of manufacturing wiring substrate, and method of manufacturing electronic apparatus May. 25, 2010
7723242 Enhanced thin-film oxidation process May. 25, 2010
7718544 Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficient May. 18, 2010
7713884 Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer May. 11, 2010
7704894 Method of eliminating small bin defects in high throughput TEOS films Apr. 27, 2010
7704893 Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD Apr. 27, 2010
7691755 Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor Apr. 6, 2010
7691673 Electronic parts packaging structure and method of manufacturing the same Apr. 6, 2010
7682989 Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesion Mar. 23, 2010
7678713 Energy beam treatment to improve packaging reliability Mar. 16, 2010
7678708 Systems and methods for forming metal oxide layers Mar. 16, 2010
7678619 Method of manufacturing a thin film transistor matrix substrate Mar. 16, 2010
7674726 Parts for deposition reactors Mar. 9, 2010
7674725 Treatment solution and method of applying a passivating layer Mar. 9, 2010
7670963 Single-wafer process for fabricating a nonvolatile charge trap memory device Mar. 2, 2010
7659215 Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition Feb. 9, 2010
7655577 Method of forming silicon-containing insulation film having low dielectric constant and low film stress Feb. 2, 2010
7655576 Insulator film, manufacturing method of multilayer wiring device and multilayer wiring device Feb. 2, 2010
7651956 Process for fabricating films of uniform properties on semiconductor devices Jan. 26, 2010
7651940 Electronic part producing method and electronic part Jan. 26, 2010
7648924 Method of manufacturing spacer Jan. 19, 2010
7648922 Fluorocarbon film and method for forming same Jan. 19, 2010
7648782 Ceramic coating member for semiconductor processing apparatus Jan. 19, 2010
7648578 Substrate processing apparatus, and method for manufacturing semiconductor device Jan. 19, 2010
7645657 MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation Jan. 12, 2010
7642205 Rapid thermal processing using energy transfer layers Jan. 5, 2010

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