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Class Information
Number: 438/778
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate
Description: Processes wherein an insulative coating is formed upon the semiconductor substrate solely by the deposition of externally supplied material.










Sub-classes under this class:

Class Number Class Name Patents
438/779 Compound semiconductor substrate 170
438/780 Depositing organic material (e.g., polymer, etc.) 1,327
438/783 Insulative material having impurity (e.g., for altering physical characteristics, etc.) 486
438/785 Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 909
438/791 Silicon nitride formation 578
438/787 Silicon oxide formation 1,006
438/786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) 458
438/782 With substrate handling during coating (e.g., immersion, spinning, etc.) 610


Patents under this class:

Patent Number Title Of Patent Date Issued
8336000 Method for determining position of auxiliary pattern, method for manufacturing photomask, and method for manufacturing semiconductor device Dec. 18, 2012
8334222 Semiconductor wafer processing method and apparatus Dec. 18, 2012
8329598 Sacrificial nitride and gate replacement Dec. 11, 2012
8329597 Semiconductor process having dielectric layer including metal oxide and MOS transistor process Dec. 11, 2012
8329518 Methods for manufacturing thin film transistor array substrate and display panel Dec. 11, 2012
8324123 Glass plate, process for producing it, and process for producing TFT panel Dec. 4, 2012
8324117 Method of forming a nanocluster-comprising dielectric layer and device comprising such a layer Dec. 4, 2012
8318612 Methods for improving the quality of group III-nitride materials and structures produced by the methods Nov. 27, 2012
8318584 Oxide-rich liner layer for flowable CVD gapfill Nov. 27, 2012
8313994 Method for forming a high-K gate stack with reduced effective oxide thickness Nov. 20, 2012
8309438 Synthesizing graphene from metal-carbon solutions using ion implantation Nov. 13, 2012
8304353 Silicon dioxide deposition methods using at least ozone and TEOS as deposition precursors Nov. 6, 2012
8298965 Volatile precursors for deposition of C-linked SiCOH dielectrics Oct. 30, 2012
8298964 Method and apparatus providing air-gap insulation between adjacent conductors using nanoparticles Oct. 30, 2012
8293657 Sacrificial layers made from aerogel for microelectromechanical systems (MEMS) device fabrication processes Oct. 23, 2012
8293626 Method for manufacturing semiconductor device Oct. 23, 2012
8288294 Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device Oct. 16, 2012
8283265 Method to enhance charge trapping Oct. 9, 2012
8278225 Hafnium tantalum oxide dielectrics Oct. 2, 2012
8278224 Flowable oxide deposition using rapid delivery of process gases Oct. 2, 2012
8273667 Method for manufacturing semiconductor device having porous low dielectric constant layer formed for insulation between metal lines Sep. 25, 2012
8268683 Method for reducing interfacial layer thickness for high-K and metal gate stack Sep. 18, 2012
8263502 Forming substrate structure by filling recesses with deposition material Sep. 11, 2012
8263492 Through substrate vias Sep. 11, 2012
8263473 Method of forming semiconductor devices Sep. 11, 2012
8258064 Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer Sep. 4, 2012
8252704 Additives to prevent degradation of cyclic alkene derivatives Aug. 28, 2012
8244482 Photometrically modulated delivery of reagents Aug. 14, 2012
8242033 High throughput recrystallization of semiconducting materials Aug. 14, 2012
8242031 High quality silicon oxide films by remote plasma CVD from disilane precursors Aug. 14, 2012
8242004 Semiconductor device and method of fabricating the same Aug. 14, 2012
8237216 Apparatus having a lanthanum-metal oxide semiconductor device Aug. 7, 2012
8236705 Deposition of viscous material Aug. 7, 2012
8236692 Method of manufacturing semiconductor device, cleaning method and cleaning control apparatus Aug. 7, 2012
8236670 Method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate Aug. 7, 2012
8232182 Fabrication of electronic and photonic systems on flexible substrates by layer transfer method Jul. 31, 2012
8227357 Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same Jul. 24, 2012
8227346 Method of producing semiconductor device Jul. 24, 2012
8222162 Batch processing method for forming structure including amorphous carbon film Jul. 17, 2012
8216861 Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition Jul. 10, 2012
8206788 Method for treating a damaged porous dielectric Jun. 26, 2012
8202806 Method to avoid threshold voltage shift in thicker dielectric films Jun. 19, 2012
8202805 Substrate processing method Jun. 19, 2012
8193102 Process for directing assemblies of particulate dispersions using surface roughness Jun. 5, 2012
8187973 Method for manufacturing semiconductor device and the semiconductor device May. 29, 2012
8183166 Dielectric layer structure and manufacturing method thereof May. 22, 2012
8168546 Method for selective deposition and devices May. 1, 2012
8163647 Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof Apr. 24, 2012
8158536 Low dielectric constant films and manufacturing method thereof, as well as electronic parts using the same Apr. 17, 2012
8158209 Method and apparatus for coating resin Apr. 17, 2012











 
 
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