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Class Information
Number: 438/778
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate
Description: Processes wherein an insulative coating is formed upon the semiconductor substrate solely by the deposition of externally supplied material.

Sub-classes under this class:

Class Number Class Name Patents
438/779 Compound semiconductor substrate 170
438/780 Depositing organic material (e.g., polymer, etc.) 1,327
438/783 Insulative material having impurity (e.g., for altering physical characteristics, etc.) 486
438/785 Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 909
438/791 Silicon nitride formation 578
438/787 Silicon oxide formation 1,006
438/786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) 458
438/782 With substrate handling during coating (e.g., immersion, spinning, etc.) 610

Patents under this class:

Patent Number Title Of Patent Date Issued
6667249 Minimizing coating defects in low dielectric constant films Dec. 23, 2003
6664115 Metal insulator structure with polarization-compatible buffer layer Dec. 16, 2003
6664127 Method of manufacturing multi-layer printed wiring board Dec. 16, 2003
6664199 Coating liquid for forming a silica group coating film having a small dielectric constant Dec. 16, 2003
6660572 Thin film semiconductor device and method for producing the same Dec. 9, 2003
6660656 Plasma processes for depositing low dielectric constant films Dec. 9, 2003
6660660 Methods for making a dielectric stack in an integrated circuit Dec. 9, 2003
6660661 Integrated circuit with improved RC delay Dec. 9, 2003
6656853 Enhanced deposition control in fabricating devices in a semiconductor wafer Dec. 2, 2003
6656854 Method of forming a low dielectric constant film with tetramethylcyclotetrasiloxane (TMCTS) and LPCVD technique Dec. 2, 2003
6653719 Silicone polymer insulation film on semiconductor substrate Nov. 25, 2003
6653203 Thin sidewall multi-step HDP deposition method to achieve completely filled high aspect ratio trenches Nov. 25, 2003
6649534 Methods for processing a coating film and for manufacturing a semiconductor element Nov. 18, 2003
6649539 Semiconductor contact fabrication method Nov. 18, 2003
6649542 Multi-level type nonvolatile semiconductor memory device Nov. 18, 2003
6645878 Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates Nov. 11, 2003
6645879 Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same Nov. 11, 2003
6645880 Treating solution applying method Nov. 11, 2003
6642095 Methods of fabricating semiconductor devices with barrier layers Nov. 4, 2003
6638819 Method for fabricating interfacial oxide in a transistor and related structure Oct. 28, 2003
6635571 Process for forming aluminum or aluminum oxide thin film on substrates Oct. 21, 2003
6632748 Composition for preparing substances having nano-pores Oct. 14, 2003
6630400 Method for electroless plating a contact pad Oct. 7, 2003
6630411 Method and apparatus for removing water vapor as a byproduct of chemical reaction in a wafer processing chamber Oct. 7, 2003
6627535 Methods and apparatus for forming a film on a substrate Sep. 30, 2003
6624038 Capacitor electrode having uneven surface formed by using hemispherical grained silicon Sep. 23, 2003
6624053 Damascene-type interconnection structure and its production process Sep. 23, 2003
6624091 Methods of forming gap fill and layers formed thereby Sep. 23, 2003
6624092 Method for forming low dielectric constant insulating layer with foamed structure Sep. 23, 2003
6624094 Method of manufacturing an interlayer dielectric film using vacuum ultraviolet CVD with Xe2 excimer lamp and silicon atoms Sep. 23, 2003
6620534 Film having enhanced reflow characteristics at low thermal budget Sep. 16, 2003
6620739 Method of manufacturing semiconductor device Sep. 16, 2003
6620742 In-situ use of dichloroethene and NH3 in an H2O steam based oxidation system to provide a source of chlorine Sep. 16, 2003
6617230 Use of selective ozone teos oxide to create variable thickness layers and spacers Sep. 9, 2003
6617261 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates Sep. 9, 2003
6617262 Sputtered insulating layer for wordline stacks Sep. 9, 2003
6617264 SOG materials for spacer anodic bonding and method of preparing the same Sep. 9, 2003
6617265 Photomask and method for manufacturing the same Sep. 9, 2003
6613587 Method of replacing at least a portion of a semiconductor substrate deposition chamber liner Sep. 2, 2003
6613659 Manufacturing method of gate insulating film of multiple thickness Sep. 2, 2003
6613699 Process for producing a semiconductor device Sep. 2, 2003
6610593 Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same Aug. 26, 2003
6610609 Compatibilization treatment Aug. 26, 2003
6611002 Gallium nitride material devices and methods including backside vias Aug. 26, 2003
6605542 Manufacturing method of semiconductor devices by using dry etching technology Aug. 12, 2003
6605549 Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics Aug. 12, 2003
6605551 Electrocoating process to form a dielectric layer in an organic substrate to reduce loop inductance Aug. 12, 2003
6602800 Apparatus for forming thin film on semiconductor substrate by plasma reaction Aug. 5, 2003
6602801 Method for forming a region of low dielectric constant nanoporous material Aug. 5, 2003
6602802 Method of forming a porous film on a substrate Aug. 5, 2003

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