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Class Information
Number: 438/778
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate
Description: Processes wherein an insulative coating is formed upon the semiconductor substrate solely by the deposition of externally supplied material.










Sub-classes under this class:

Class Number Class Name Patents
438/779 Compound semiconductor substrate 170
438/780 Depositing organic material (e.g., polymer, etc.) 1,327
438/783 Insulative material having impurity (e.g., for altering physical characteristics, etc.) 486
438/785 Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 909
438/791 Silicon nitride formation 578
438/787 Silicon oxide formation 1,006
438/786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) 458
438/782 With substrate handling during coating (e.g., immersion, spinning, etc.) 610


Patents under this class:
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Patent Number Title Of Patent Date Issued
7199041 Methods for fabricating an interlayer dielectric layer of a semiconductor device Apr. 3, 2007
7195966 Methods of fabricating semiconductor devices including polysilicon resistors and related devices Mar. 27, 2007
7192890 Depositing an oxide Mar. 20, 2007
7192889 Methods for forming a high dielectric film Mar. 20, 2007
7192888 Low selectivity deposition methods Mar. 20, 2007
7192824 Lanthanide oxide / hafnium oxide dielectric layers Mar. 20, 2007
7189663 Organic semiconductor device having an active dielectric layer comprising silsesquioxanes Mar. 13, 2007
7189662 Methods of forming semiconductor constructions Mar. 13, 2007
7183227 Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas Feb. 27, 2007
7179755 Forming a porous dielectric layer and structures formed thereby Feb. 20, 2007
7176147 Combination insulator and organic semiconductor formed from self-assembling block co-polymers Feb. 13, 2007
7176144 Plasma detemplating and silanol capping of porous dielectric films Feb. 13, 2007
7176116 High performance FET with laterally thin extension Feb. 13, 2007
7176079 Method of fabricating a semiconductor device with a wet oxidation with steam process Feb. 13, 2007
7166546 Planarization for integrated circuits Jan. 23, 2007
7166544 Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors Jan. 23, 2007
7166543 Methods for forming an enriched metal oxide surface for use in a semiconductor device Jan. 23, 2007
7166542 Method for fabricating passivation layer Jan. 23, 2007
7166541 Method of forming dielectric layer using plasma enhanced atomic layer deposition technique Jan. 23, 2007
7166185 Forming system for insulation film Jan. 23, 2007
7163902 Infra-red light-emitting device and method for preparing the same Jan. 16, 2007
7160819 Method to perform selective atomic layer deposition of zinc oxide Jan. 9, 2007
7157385 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry Jan. 2, 2007
7157325 Method for fabricating semiconductor memory device Jan. 2, 2007
7156923 Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method Jan. 2, 2007
7153787 CVD plasma assisted lower dielectric constant SICOH film Dec. 26, 2006
7153784 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Dec. 26, 2006
7153783 Materials with enhanced properties for shallow trench isolation/premetal dielectric applications Dec. 26, 2006
7153778 Methods of forming openings, and methods of forming container capacitors Dec. 26, 2006
7153753 Strained Si/SiGe/SOI islands and processes of making same Dec. 26, 2006
7153736 Methods of forming capacitors and methods of forming capacitor dielectric layers Dec. 26, 2006
7148155 Sequential deposition/anneal film densification method Dec. 12, 2006
7148154 Method of forming silicon-containing insulation film having low dielectric constant and low film stress Dec. 12, 2006
7148153 Process for oxide fabrication using oxidation steps below and above a threshold temperature Dec. 12, 2006
7144828 He treatment to improve low-k adhesion property Dec. 5, 2006
7144827 Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications Dec. 5, 2006
7144822 High density plasma process for optimum film quality and electrical results Dec. 5, 2006
7141515 Method for manufacturing device Nov. 28, 2006
7141485 Shallow trench isolation structure with low sidewall capacitance for high speed integrated circuits Nov. 28, 2006
7141462 Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof Nov. 28, 2006
7138333 Process for sealing plasma-damaged, porous low-k materials Nov. 21, 2006
7138068 Printed circuit patterned embedded capacitance layer Nov. 21, 2006
7135418 Optimal operation of conformal silica deposition reactors Nov. 14, 2006
7135398 Reliable low-k interconnect structure with hybrid dielectric Nov. 14, 2006
7135369 Atomic layer deposited ZrAl.sub.xO.sub.y dielectric layers including Zr.sub.4AlO.sub.9 Nov. 14, 2006
7132373 Thin metal oxide film and process for producing the same Nov. 7, 2006
7129189 Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD) Oct. 31, 2006
7129187 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films Oct. 31, 2006
7129164 Method for forming a multi-layer low-K dual damascene Oct. 31, 2006
7125814 Bis-o-nitrophenols derivatives and poly-o-hydroxyamides, polybenzoxazoles, materials, and microelectronic devices made therefrom Oct. 24, 2006

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