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Class Information
Number: 438/778
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate
Description: Processes wherein an insulative coating is formed upon the semiconductor substrate solely by the deposition of externally supplied material.










Sub-classes under this class:

Class Number Class Name Patents
438/779 Compound semiconductor substrate 170
438/780 Depositing organic material (e.g., polymer, etc.) 1,327
438/783 Insulative material having impurity (e.g., for altering physical characteristics, etc.) 486
438/785 Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 909
438/791 Silicon nitride formation 578
438/787 Silicon oxide formation 1,006
438/786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) 458
438/782 With substrate handling during coating (e.g., immersion, spinning, etc.) 610


Patents under this class:
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Patent Number Title Of Patent Date Issued
7365023 Porous underlayer coating and underlayer coating forming composition for forming porous underlayer coating Apr. 29, 2008
7365003 Carbon nanotube interconnects in porous diamond interlayer dielectrics Apr. 29, 2008
7361614 Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry Apr. 22, 2008
7361611 Doped nitride film, doped oxide film and other doped films Apr. 22, 2008
7358187 Coating process for patterned substrate surfaces Apr. 15, 2008
7358185 Device having contact pad with a conductive layer and a conductive passivation layer Apr. 15, 2008
7358170 Methods of forming conductive interconnects, and methods of depositing nickel Apr. 15, 2008
7354872 Hi-K dielectric layer deposition methods Apr. 8, 2008
7351670 Method for producing silicon nitride films and process for fabricating semiconductor devices using said method Apr. 1, 2008
7351669 Method of forming a substantially closed void Apr. 1, 2008
7351658 Process for producing yttrium oxide thin films Apr. 1, 2008
7351653 Method for damascene process Apr. 1, 2008
7348283 Mechanically robust dielectric film and stack Mar. 25, 2008
7348280 Method for fabricating and BEOL interconnect structures with simultaneous formation of high-k and low-k dielectric regions Mar. 25, 2008
7345000 Method and system for treating a dielectric film Mar. 18, 2008
7341960 Method for making a metal oxide semiconductor device Mar. 11, 2008
7341959 Plasma enhanced atomic layer deposition system and method Mar. 11, 2008
7338869 Semiconductor device and its manufacturing method Mar. 4, 2008
7338821 Method for the passivation of the mirror-faces surfaces of optical semi-conductor elements Mar. 4, 2008
7335609 Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials Feb. 26, 2008
7335607 Method of forming a gate dielectric layer Feb. 26, 2008
7335604 Thin-film coating apparatus Feb. 26, 2008
7335586 Sealing porous dielectric material using plasma-induced surface polymerization Feb. 26, 2008
7335584 Method of using SACVD deposition and corresponding deposition reactor Feb. 26, 2008
7332443 Method for fabricating a semiconductor device Feb. 19, 2008
7332442 Systems and methods for forming metal oxide layers Feb. 19, 2008
7332391 Method for forming storage node contacts in semiconductor device Feb. 19, 2008
7329618 Ion implanting methods Feb. 12, 2008
7329616 Substrate processing apparatus and substrate processing method Feb. 12, 2008
7329615 Atomic layer deposition method of forming an oxide comprising layer on a substrate Feb. 12, 2008
7329591 Method for forming silicon-containing film and method for decreasing number of particles Feb. 12, 2008
7326657 Post-deposition treatment to enhance properties of Si-O-C low k films Feb. 5, 2008
7323729 Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus therefor Jan. 29, 2008
7323423 Forming high-k dielectric layers on smooth substrates Jan. 29, 2008
7320943 Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same Jan. 22, 2008
7316960 Strain enhanced ultra shallow junction formation Jan. 8, 2008
7312165 Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices Dec. 25, 2007
7312164 Selective passivation of exposed silicon Dec. 25, 2007
7312163 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates Dec. 25, 2007
7312094 Printing system and method for fabricating a liquid crystal display device Dec. 25, 2007
7309661 Method for forming gate of semiconductor device Dec. 18, 2007
7309659 Silicon-containing resist to pattern organic low k-dielectrics Dec. 18, 2007
7307027 Void free interlayer dielectric Dec. 11, 2007
7304003 Oxidizing method and oxidizing unit for object to be processed Dec. 4, 2007
7300886 Interlayer dielectric for charge loss improvement Nov. 27, 2007
7300885 Film formation apparatus and method for semiconductor process Nov. 27, 2007
7300824 Method of packaging and interconnection of integrated circuits Nov. 27, 2007
7294588 In-situ-etch-assisted HDP deposition Nov. 13, 2007
7294583 Methods for the use of alkoxysilanol precursors for vapor deposition of SiO.sub.2 films Nov. 13, 2007
7285502 Methods for forming porous insulator structures on semiconductor devices Oct. 23, 2007

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