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Class Information
Number: 438/778
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate
Description: Processes wherein an insulative coating is formed upon the semiconductor substrate solely by the deposition of externally supplied material.

Sub-classes under this class:

Class Number Class Name Patents
438/779 Compound semiconductor substrate 170
438/780 Depositing organic material (e.g., polymer, etc.) 1,327
438/783 Insulative material having impurity (e.g., for altering physical characteristics, etc.) 486
438/785 Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 909
438/791 Silicon nitride formation 578
438/787 Silicon oxide formation 1,006
438/786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) 458
438/782 With substrate handling during coating (e.g., immersion, spinning, etc.) 610

Patents under this class:
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Patent Number Title Of Patent Date Issued
7446059 Semiconductor device and method for manufacturing same Nov. 4, 2008
7446056 Method for increasing polysilicon grain size Nov. 4, 2008
7446055 Aerosol misted deposition of low dielectric organosilicate films Nov. 4, 2008
7443001 Preparation of microelectromechanical system device using an anti-stiction material and selective plasma sputtering Oct. 28, 2008
7439334 Method of arrangement of titanium-binding ferritin and inorganic particles Oct. 21, 2008
7435683 Apparatus and method for selectively recessing spacers on multi-gate devices Oct. 14, 2008
7435620 Low temperature methods of forming back side redistribution layers in association with through wafer interconnects Oct. 14, 2008
7432218 Method for producing porous body Oct. 7, 2008
7432201 Hybrid PVD-CVD system Oct. 7, 2008
7429541 Method of forming trench isolation in the fabrication of integrated circuitry Sep. 30, 2008
7429338 Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization Sep. 30, 2008
7427570 Porous organosilicate layers, and vapor deposition systems and methods for preparing same Sep. 23, 2008
7427544 Semiconductor device and method of manufacturing the same Sep. 23, 2008
RE40507 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG Sep. 16, 2008
7425346 Method for making hybrid dielectric film Sep. 16, 2008
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Sep. 2, 2008
7419920 Metal thin film and semiconductor comprising a metal thin film Sep. 2, 2008
7419919 Method of manufacturing semiconductor device Sep. 2, 2008
7419888 Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same Sep. 2, 2008
7419849 Method for producing single electron semiconductor element Sep. 2, 2008
7419613 Method and device for plasma-etching organic material film Sep. 2, 2008
7416993 Patterned nanowire articles on a substrate and methods of making the same Aug. 26, 2008
7411275 Semiconductor device comprising an inorganic insulating film and method of manufacturing the same Aug. 12, 2008
7410913 Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Aug. 12, 2008
7407893 Liquid precursors for the CVD deposition of amorphous carbon films Aug. 5, 2008
7402535 Method of incorporating stress into a transistor channel by use of a backside layer Jul. 22, 2008
7402534 Pretreatment processes within a batch ALD reactor Jul. 22, 2008
7402445 Method of forming micro-structures and nano-structures Jul. 22, 2008
7396777 Method of fabricating high-k dielectric layer having reduced impurity Jul. 8, 2008
7396774 Methods for forming an enriched metal oxide surface Jul. 8, 2008
7393935 Method of selective arrangement of ferritin Jul. 1, 2008
7393796 Composite dielectric forming methods and composite dielectrics Jul. 1, 2008
7393795 Methods for post-etch deposition of a dielectric film Jul. 1, 2008
7393736 Atomic layer deposition of Zr.sub.x Hf.sub.y Sn.sub.1-x-y O.sub.2 films as high k gate dielectrics Jul. 1, 2008
7393731 Semiconductor device and method of manufacturing the same Jul. 1, 2008
7390746 Multiple deposition for integration of spacers in pitch multiplication process Jun. 24, 2008
7390743 Methods for forming a structured tungsten layer and forming a semiconductor device using the same Jun. 24, 2008
7390434 Method and apparatus for producing film from polymer solution, and optical polymer film Jun. 24, 2008
7387973 Method for improving low-K dielectrics by supercritical fluid treatments Jun. 17, 2008
7387923 ISFET using PbTiO.sub.3 as sensing film Jun. 17, 2008
7384872 Method of producing substrate having patterned organosilane layer and method of using the substrate having the patterned organosilane layer Jun. 10, 2008
7381659 Method for reducing film stress for SiCOH low-k dielectric materials Jun. 3, 2008
7381620 Oxygen elimination for device processing Jun. 3, 2008
7378357 Multiple dielectric FinFET structure and method May. 27, 2008
7378356 Biased pulse DC reactive sputtering of oxide films May. 27, 2008
7374635 Forming method and forming system for insulation film May. 20, 2008
7368402 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds May. 6, 2008
7368370 Site-specific nanoparticle self-assembly May. 6, 2008
7368365 Memory array buried digit line May. 6, 2008
7365027 ALD of amorphous lanthanide doped TiO.sub.x films Apr. 29, 2008

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