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Class Information
Number: 438/778
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > Insulative material deposited upon semiconductive substrate
Description: Processes wherein an insulative coating is formed upon the semiconductor substrate solely by the deposition of externally supplied material.










Sub-classes under this class:

Class Number Class Name Patents
438/779 Compound semiconductor substrate 170
438/780 Depositing organic material (e.g., polymer, etc.) 1,327
438/783 Insulative material having impurity (e.g., for altering physical characteristics, etc.) 486
438/785 Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 909
438/791 Silicon nitride formation 578
438/787 Silicon oxide formation 1,006
438/786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) 458
438/782 With substrate handling during coating (e.g., immersion, spinning, etc.) 610


Patents under this class:

Patent Number Title Of Patent Date Issued
8710682 Materials and methods for stress reduction in semiconductor wafer passivation layers Apr. 29, 2014
8709956 MRAM with sidewall protection and method of fabrication Apr. 29, 2014
8703625 Methods to prepare silicon-containing films Apr. 22, 2014
8703624 Dielectric films comprising silicon and methods for making same Apr. 22, 2014
8691709 Method of forming metal carbide barrier layers for fluorocarbon films Apr. 8, 2014
8679989 Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion Mar. 25, 2014
8673757 Structure and method for using high-k material as an etch stop layer in dual stress layer process Mar. 18, 2014
8664118 Semiconductor device and method for manufacturing the same Mar. 4, 2014
8658468 Method for fabricating a semiconductor and semiconductor package Feb. 25, 2014
8652973 Processing method for forming structure including amorphous carbon film Feb. 18, 2014
8652950 C-rich carbon boron nitride dielectric films for use in electronic devices Feb. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8647993 Methods for UV-assisted conformal film deposition Feb. 11, 2014
8643151 Passivation layer for semiconductor devices Feb. 4, 2014
8642487 Film deposition method and film deposition apparatus Feb. 4, 2014
8642446 Semiconductor device and method of forming protective structure around semiconductor die for localized planarization of insulating layer Feb. 4, 2014
8637412 Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD Jan. 28, 2014
8637400 Interconnect structures and methods for back end of the line integration Jan. 28, 2014
8633119 Methods for manufacturing high dielectric constant films Jan. 21, 2014
8633114 Methods for manufacturing high dielectric constant films Jan. 21, 2014
8633050 Solar cell, and method of manufacturing the same Jan. 21, 2014
8629067 Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio Jan. 14, 2014
8623741 Homogeneous porous low dielectric constant materials Jan. 7, 2014
8618003 Method of making electronic devices using selective deposition Dec. 31, 2013
8610182 Semiconductor device and method for manufacturing the same Dec. 17, 2013
8609552 Method for controlling dangling bonds in fluorocarbon films Dec. 17, 2013
8609551 Method for manufacturing semiconductor device and substrate processing apparatus Dec. 17, 2013
8598049 Deposition method Dec. 3, 2013
8598048 Integrated circuit package including a direct connect pad, a blind via, and a bond pad electrically coupled to the direct connect pad Dec. 3, 2013
8592327 Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage Nov. 26, 2013
8592326 Method for fabricating an inter dielectric layer in semiconductor device Nov. 26, 2013
8592261 Method for designing semiconductor device Nov. 26, 2013
8586487 Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films Nov. 19, 2013
8580699 Embedded catalyst for atomic layer deposition of silicon oxide Nov. 12, 2013
8580697 CVD flowable gap fill Nov. 12, 2013
8575037 Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same Nov. 5, 2013
8569183 Low temperature dielectric flow using microwaves Oct. 29, 2013
8569162 Conductive bump structure on substrate and fabrication method thereof Oct. 29, 2013
8563445 Conformal layers by radical-component CVD Oct. 22, 2013
8563443 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen Oct. 22, 2013
8557718 Method for blister-free passivation of a silicon surface Oct. 15, 2013
8546276 Deposition of group IV metal-containing films at high temperature Oct. 1, 2013
8541317 Deposition method for passivation of silicon wafers Sep. 24, 2013
8541316 Method of manufacturing semiconductor device including sequentially forming first and second mask material layers and forming a dotted photoresist pattern on the second mask material layer Sep. 24, 2013
8541276 Methods of forming an insulating metal oxide Sep. 24, 2013
8530955 Nonvolatile semiconductor memory device and method for manufacturing same Sep. 10, 2013
8524618 Hafnium tantalum oxide dielectrics Sep. 3, 2013
8524616 Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control Sep. 3, 2013
8524615 Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer Sep. 3, 2013
8524614 III-V compound semiconductor material passivation with crystalline interlayer Sep. 3, 2013











 
 
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