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Class Information
Number: 438/774
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) > Oxidation > In atmosphere containing halogen
Description: Processes wherein the oxidation is carried out in an atmosphere containing a halogen.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5693578 Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance Dec. 2, 1997
5672525 Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity Sep. 30, 1997
5637528 Semiconductor device manufacturing method including dry oxidation Jun. 10, 1997
5599425 Predecomposition of organic chlorides for silicon processing Feb. 4, 1997
5571734 Method for forming a fluorinated nitrogen containing dielectric Nov. 5, 1996
5494852 High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle Feb. 27, 1996
5360769 Method for fabricating hybrid oxides for thinner gate devices Nov. 1, 1994
5294571 Rapid thermal oxidation of silicon in an ozone ambient Mar. 15, 1994
5288662 Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning Feb. 22, 1994
5244843 Process for forming a thin oxide layer Sep. 14, 1993
5132244 Growth-modified thermal oxidation for thin oxides Jul. 21, 1992
5057463 Thin oxide structure and method Oct. 15, 1991
5043224 Chemically enhanced thermal oxidation and nitridation of silicon and products thereof Aug. 27, 1991
4894353 Method of fabricating passivated tunnel oxide Jan. 16, 1990
4612258 Method for thermally oxidizing polycide substrates in a dry oxygen environment and semiconductor circuit structures produced thereby Sep. 16, 1986
4606935 Process and apparatus for producing high purity oxidation on a semiconductor substrate Aug. 19, 1986
4567061 Method for manufacture of insulating film and interface between insulation film and semiconductor Jan. 28, 1986
4557950 Process for deposition of borophosphosilicate glass Dec. 10, 1985
4518630 Method for forming silicon oxide films May. 21, 1985
4490900 Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein Jan. 1, 1985
4409260 Process for low-temperature surface layer oxidation of a semiconductor substrate Oct. 11, 1983
4401691 Oxidation of silicon wafers to eliminate white ribbon Aug. 30, 1983
4377605 Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique Mar. 22, 1983
4293589 Process for high pressure oxidation of silicon Oct. 6, 1981
4268538 High-pressure, high-temperature gaseous chemical method for silicon oxidation May. 19, 1981
4267205 Process for low-temperature surface layer oxidation of a semiconductor substrate May. 12, 1981
4231809 Method of removing impurity metals from semiconductor devices Nov. 4, 1980
4155802 Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask May. 22, 1979
4139658 Process for manufacturing a radiation hardened oxide Feb. 13, 1979
4109030 Method for thermally oxidizing silicon Aug. 22, 1978
4098924 Gate fabrication method for MNOS memory devices Jul. 4, 1978
T954009 Method for the thermal oxidation of silicon with added chlorine Jan. 4, 1977

1 2 3

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