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Class Information
Number: 438/774
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) > Oxidation > In atmosphere containing halogen
Description: Processes wherein the oxidation is carried out in an atmosphere containing a halogen.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
RE38674 Process for forming a thin oxide layer Dec. 21, 2004
6808993 Ultra-thin gate dielectrics Oct. 26, 2004
6770538 Ion-assisted oxidation methods and the resulting structures Aug. 3, 2004
6740601 HDP-CVD deposition process for filling high aspect ratio gaps May. 25, 2004
6723662 Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride Apr. 20, 2004
6645884 Method of forming a silicon nitride layer on a substrate Nov. 11, 2003
6638877 Ultra-thin SiO2using N2O as the oxidant Oct. 28, 2003
6624038 Capacitor electrode having uneven surface formed by using hemispherical grained silicon Sep. 23, 2003
6610614 Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates Aug. 26, 2003
6607946 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 Aug. 19, 2003
6596650 Method for fabricating semiconductor integrated circuit device Jul. 22, 2003
6586346 Method of forming an oxide film Jul. 1, 2003
6569780 Method for fabricating semiconductor integrated circuit device May. 27, 2003
6541393 Method for fabricating semiconductor device Apr. 1, 2003
6514879 Method and apparatus for dry/catalytic-wet steam oxidation of silicon Feb. 4, 2003
6448651 Semiconductor device having a multi-level metallization and its fabricating method Sep. 10, 2002
6444593 Surface treatment of low-K SiOF to prevent metal interaction Sep. 3, 2002
6436196 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer Aug. 20, 2002
6407008 Method of forming an oxide layer Jun. 18, 2002
6387827 Method for growing thin silicon oxides on a silicon substrate using chlorine precursors May. 14, 2002
6387823 Method and apparatus for controlling deposition process using residual gas analysis May. 14, 2002
6380103 Rapid thermal etch and rapid thermal oxidation Apr. 30, 2002
6372667 Method of manufacturing a capacitor for semiconductor memory devices Apr. 16, 2002
6368949 Post-spacer etch surface treatment for improved silicide formation Apr. 9, 2002
6362114 Semiconductor processing methods of forming an oxynitride film on a silicon substrate Mar. 26, 2002
6355581 Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capability Mar. 12, 2002
6346487 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer Feb. 12, 2002
6331495 Semiconductor structure useful in a self-aligned contact etch and method for making same Dec. 18, 2001
6316371 Method for the chemical treatment of a semiconductor substrate Nov. 13, 2001
6303522 Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor Oct. 16, 2001
6291365 Method for manufacturing thin gate silicon oxide layer Sep. 18, 2001
6277765 Low-K Dielectric layer and method of making same Aug. 21, 2001
6271152 Method for forming oxide using high pressure Aug. 7, 2001
6228751 Method of manufacturing a semiconductor device May. 8, 2001
6221790 Stable thin film oxide standard Apr. 24, 2001
6218317 Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low K, dual damascene interconnect integration Apr. 17, 2001
6204199 Method for producing a semiconductor device Mar. 20, 2001
6177364 Integration of low-K SiOF for damascene structure Jan. 23, 2001
6169035 Method of local oxidation using etchant and oxidizer Jan. 2, 2001
6162702 Self-supported ultra thin silicon wafer process Dec. 19, 2000
6140251 Method of processing a substrate Oct. 31, 2000
6130164 Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof Oct. 10, 2000
6114258 Method of oxidizing a substrate in the presence of nitride and oxynitride films Sep. 5, 2000
6114257 Process for modified oxidation of a semiconductor substrate using chlorine plasma Sep. 5, 2000
6103601 Method and apparatus for improving film stability of halogen-doped silicon oxide films Aug. 15, 2000
6066572 Method of removing carbon contamination on semiconductor substrate May. 23, 2000
6037258 Method of forming a smooth copper seed layer for a copper damascene structure Mar. 14, 2000
5858844 Method for construction and fabrication of submicron field-effect transistors by optimization of poly oxide process Jan. 12, 1999
5846888 Method for in-situ incorporation of desirable impurities into high pressure oxides Dec. 8, 1998
5721176 Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates Feb. 24, 1998

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