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Class Information
Number: 438/774
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) > Oxidation > In atmosphere containing halogen
Description: Processes wherein the oxidation is carried out in an atmosphere containing a halogen.


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7605095 Heat processing method and apparatus for semiconductor process Oct. 20, 2009
7541246 Method of manufacturing semiconductor device Jun. 2, 2009
7531464 Semiconductive device fabricated using a substantially disassociated chlorohydrocarbon May. 12, 2009
7524742 Structure of metal interconnect and fabrication method thereof Apr. 28, 2009
7358171 Method to chemically remove metal impurities from polycide gate sidewalls Apr. 15, 2008
7326655 Method of forming an oxide layer Feb. 5, 2008
7304002 Method of oxidizing member to be treated Dec. 4, 2007
7256143 Semiconductor device having self-aligned contact plug and method for fabricating the same Aug. 14, 2007
7235498 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N.sub.2O and O.sub.3 Jun. 26, 2007
7196021 HDP-CVD deposition process for filling high aspect ratio gaps Mar. 27, 2007
7183143 Method for forming nitrided tunnel oxide layer Feb. 27, 2007
7169714 Method and structure for graded gate oxides on vertical and non-planar surfaces Jan. 30, 2007
7148103 Multilevel poly-Si tiling for semiconductor circuit manufacture Dec. 12, 2006
7132362 Semiconductor device with contacts having uniform contact resistance and method for manufacturing the same Nov. 7, 2006
7129187 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films Oct. 31, 2006
7119033 Ion-assisted oxidation methods and the resulting structures Oct. 10, 2006
7087536 Silicon oxide gapfill deposition using liquid precursors Aug. 8, 2006
6992370 Memory cell structure having nitride layer with reduced charge loss and method for fabricating same Jan. 31, 2006
6949478 Oxide film forming method Sep. 27, 2005
6933248 Method for transistor gate dielectric layer with uniform nitrogen concentration Aug. 23, 2005
6927121 Method for manufacturing ferroelectric random access memory capacitor Aug. 9, 2005
6914016 HDP-CVD deposition process for filling high aspect ratio gaps Jul. 5, 2005
6887797 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer May. 3, 2005
6864125 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 Mar. 8, 2005
RE38674 Process for forming a thin oxide layer Dec. 21, 2004
6808993 Ultra-thin gate dielectrics Oct. 26, 2004
6770538 Ion-assisted oxidation methods and the resulting structures Aug. 3, 2004
6740601 HDP-CVD deposition process for filling high aspect ratio gaps May. 25, 2004
6723662 Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride Apr. 20, 2004
6645884 Method of forming a silicon nitride layer on a substrate Nov. 11, 2003
6638877 Ultra-thin SiO2using N2O as the oxidant Oct. 28, 2003
6624038 Capacitor electrode having uneven surface formed by using hemispherical grained silicon Sep. 23, 2003
6610614 Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates Aug. 26, 2003
6607946 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 Aug. 19, 2003
6596650 Method for fabricating semiconductor integrated circuit device Jul. 22, 2003
6586346 Method of forming an oxide film Jul. 1, 2003
6569780 Method for fabricating semiconductor integrated circuit device May. 27, 2003
6541393 Method for fabricating semiconductor device Apr. 1, 2003
6514879 Method and apparatus for dry/catalytic-wet steam oxidation of silicon Feb. 4, 2003
6448651 Semiconductor device having a multi-level metallization and its fabricating method Sep. 10, 2002
6444593 Surface treatment of low-K SiOF to prevent metal interaction Sep. 3, 2002
6436196 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer Aug. 20, 2002
6407008 Method of forming an oxide layer Jun. 18, 2002
6387827 Method for growing thin silicon oxides on a silicon substrate using chlorine precursors May. 14, 2002
6387823 Method and apparatus for controlling deposition process using residual gas analysis May. 14, 2002
6380103 Rapid thermal etch and rapid thermal oxidation Apr. 30, 2002
6372667 Method of manufacturing a capacitor for semiconductor memory devices Apr. 16, 2002
6368949 Post-spacer etch surface treatment for improved silicide formation Apr. 9, 2002
6362114 Semiconductor processing methods of forming an oxynitride film on a silicon substrate Mar. 26, 2002
6355581 Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capability Mar. 12, 2002

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