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Class Information
Number: 438/770
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) > Oxidation
Description: Processes wherein the external agent supplies oxygen which reacts with the silicon substrate region to form a compound therewith.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6653184 |
Method of forming transistors associated with semiconductor substrates comprising forming a nitrogen-comprising region across an oxide region of a transistor gate |
Nov. 25, 2003 |
| 6649542 |
Multi-level type nonvolatile semiconductor memory device |
Nov. 18, 2003 |
| 6649537 |
Intermittent pulsed oxidation process |
Nov. 18, 2003 |
| 6649536 |
Method for fabricating capacitor of semiconductor device |
Nov. 18, 2003 |
| 6649535 |
Method for ultra-thin gate oxide growth |
Nov. 18, 2003 |
| 6645827 |
Method for forming isolation regions on semiconductor device |
Nov. 11, 2003 |
| 6642117 |
Method for forming composite dielectric layer |
Nov. 4, 2003 |
| 6638899 |
Photoresist stripping solution and a method of stripping photoresists with the same |
Oct. 28, 2003 |
| 6638877 |
Ultra-thin SiO2using N2O as the oxidant |
Oct. 28, 2003 |
| 6638876 |
Method of forming dielectric films |
Oct. 28, 2003 |
| 6635584 |
Versatile system for forming uniform wafer surfaces |
Oct. 21, 2003 |
| 6620744 |
Insulating film formation method, semiconductor device, and production apparatus |
Sep. 16, 2003 |
| 6620714 |
Method for reducing oxidation encroachment of stacked gate layer |
Sep. 16, 2003 |
| 6617206 |
Method of forming a capacitor structure |
Sep. 9, 2003 |
| 6613677 |
Long range ordered semiconductor interface phase and oxides |
Sep. 2, 2003 |
| 6613697 |
Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof |
Sep. 2, 2003 |
| 6610614 |
Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates |
Aug. 26, 2003 |
| 6607965 |
Methods of forming capacitors |
Aug. 19, 2003 |
| 6607990 |
Semiconductor device and its manufacturing method |
Aug. 19, 2003 |
| 6607946 |
Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 |
Aug. 19, 2003 |
| 6602799 |
Method of forming a uniform ultra-thin gate oxide layer |
Aug. 5, 2003 |
| 6599845 |
Oxidizing method and oxidation system |
Jul. 29, 2003 |
| 6599807 |
Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics |
Jul. 29, 2003 |
| 6596651 |
Method for stabilizing high pressure oxidation of a semiconductor device |
Jul. 22, 2003 |
| 6596650 |
Method for fabricating semiconductor integrated circuit device |
Jul. 22, 2003 |
| 6593077 |
Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate |
Jul. 15, 2003 |
| 6593253 |
Method of manufacturing semiconductor device |
Jul. 15, 2003 |
| 6586346 |
Method of forming an oxide film |
Jul. 1, 2003 |
| 6586301 |
Method of fabricating EEPROM having tunnel window area |
Jul. 1, 2003 |
| 6586345 |
Method of manufacturing a semiconductor device wiring layer having an oxide layer between the polysilicon and silicide layers |
Jul. 1, 2003 |
| 6573193 |
Ozone-enhanced oxidation for high-k dielectric semiconductor devices |
Jun. 3, 2003 |
| 6573192 |
Dual thickness gate oxide fabrication method using plasma surface treatment |
Jun. 3, 2003 |
| 6573141 |
In-situ etch and pre-clean for high quality thin oxides |
Jun. 3, 2003 |
| 6569780 |
Method for fabricating semiconductor integrated circuit device |
May. 27, 2003 |
| 6566263 |
Method of forming an HDP CVD oxide layer over a metal line structure for high aspect ratio design rule |
May. 20, 2003 |
| 6566199 |
Method and system for forming film, semiconductor device and fabrication method thereof |
May. 20, 2003 |
| 6559069 |
Process for the electrochemical oxidation of a semiconductor substrate |
May. 6, 2003 |
| 6559068 |
Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor |
May. 6, 2003 |
| 6551948 |
Flash memory device and a fabrication process thereof, method of forming a dielectric film |
Apr. 22, 2003 |
| 6551947 |
Method of forming a high quality gate oxide at low temperatures |
Apr. 22, 2003 |
| 6551946 |
TWO-STEP OXIDATION PROCESS FOR OXIDIZING A SILICON SUBSTRATE WHEREIN THE FIRST STEP IS CARRIED OUT AT A TEMPERATURE BELOW THE VISCOELASTIC TEMPERATURE OF SILICON DIOXIDE AND THE SECOND STEP IS |
Apr. 22, 2003 |
| 6548363 |
Method to reduce the gate induced drain leakage current in CMOS devices |
Apr. 15, 2003 |
| 6548335 |
Selective epitaxy to reduce gate/gate dielectric interface roughness |
Apr. 15, 2003 |
| 6548422 |
Method and structure for oxide/silicon nitride interface substructure improvements |
Apr. 15, 2003 |
| 6544907 |
Method of forming a high quality gate oxide layer having a uniform thickness |
Apr. 8, 2003 |
| 6541394 |
Method of making a graded grown, high quality oxide layer for a semiconductor device |
Apr. 1, 2003 |
| 6537926 |
Process for improving the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication |
Mar. 25, 2003 |
| 6537911 |
Chemical vapor deposition method |
Mar. 25, 2003 |
| 6534380 |
Semiconductor substrate and method of manufacturing the same |
Mar. 18, 2003 |
| 6531410 |
Intrinsic dual gate oxide MOSFET using a damascene gate process |
Mar. 11, 2003 |
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