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Class Information
Number: 438/770
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) > Oxidation
Description: Processes wherein the external agent supplies oxygen which reacts with the silicon substrate region to form a compound therewith.










Sub-classes under this class:

Class Number Class Name Patents
438/774 In atmosphere containing halogen 128
438/773 In atmosphere containing water vapor (i.e., wet oxidation) 218
438/771 Using electromagnetic or wave energy 180


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
6808984 Method for forming a contact opening Oct. 26, 2004
6806199 Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace Oct. 19, 2004
6800538 Semiconductor device fabrication method and semiconductor fabrication control method Oct. 5, 2004
6794314 Method of forming ultrathin oxide layer Sep. 21, 2004
6794313 Oxidation process to improve polysilicon sidewall roughness Sep. 21, 2004
6784115 Method of simultaneously implementing differential gate oxide thickness using fluorine bearing impurities Aug. 31, 2004
6780697 Method of manufacturing lateral double-diffused metal oxide semiconductor device Aug. 24, 2004
6780765 Integrated circuit trenched features and method of producing same Aug. 24, 2004
6780789 Laser thermal oxidation to form ultra-thin gate oxide Aug. 24, 2004
6777348 Method of forming oxynitride film Aug. 17, 2004
6777346 Planarization using plasma oxidized amorphous silicon Aug. 17, 2004
6777274 Low temperature polycrystalline silicon type thin film transistor and a method of the thin film transistor fabrication Aug. 17, 2004
6770538 Ion-assisted oxidation methods and the resulting structures Aug. 3, 2004
6767848 Silicon semiconductor substrate and method for production thereof Jul. 27, 2004
6767843 Method of N2O growth of an oxide layer on a silicon carbide layer Jul. 27, 2004
6767760 Process of manufacturing a thin-film transistor Jul. 27, 2004
6764962 Method for forming an oxynitride layer Jul. 20, 2004
6764960 Manufacture of composite oxide film and magnetic tunneling junction element having thin composite oxide film Jul. 20, 2004
6764961 Method of forming a metal gate electrode Jul. 20, 2004
6764963 Manufacturing method of semiconductor devices Jul. 20, 2004
6759314 Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films Jul. 6, 2004
6746968 Method of reducing charge loss for nonvolatile memory Jun. 8, 2004
6746955 Method of manufacturing a semiconductor device including a heat treatment procedure Jun. 8, 2004
6737362 Method for manufacturing a thin gate dielectric layer for integrated circuit fabrication May. 18, 2004
6734114 Method for manufacturing semiconductor integrated circuit device May. 11, 2004
6727194 Wafer batch processing system and method Apr. 27, 2004
6727142 Orientation independent oxidation of nitrided silicon Apr. 27, 2004
6723641 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF DETERMINING FILM FORMATION TIME, CHAMBER, CHEMICAL VAPOR DEPOSITION APPARATUS AND BOAT THEREOF, ETCHING APPARATUS, AND FILM FORMATION Apr. 20, 2004
6716695 Semiconductor with a nitrided silicon gate oxide and method Apr. 6, 2004
6716705 EEPROM device having a retrograde program junction region and process for fabricating the device Apr. 6, 2004
6716768 Method of manufacturing thin-film transistor, and liquid-crystal display Apr. 6, 2004
6713348 Method for forming an etch mask during the manufacture of a semiconductor device Mar. 30, 2004
6713364 Method for forming an insulator having a low dielectric constant on a semiconductor substrate Mar. 30, 2004
6706572 Method for manufacturing a thin film transistor using a high pressure oxidation step Mar. 16, 2004
6706643 UV-enhanced oxy-nitridation of semiconductor substrates Mar. 16, 2004
6703322 Method of forming multiple oxide layers with different thicknesses in a linear nitrogen doping process Mar. 9, 2004
6699796 Single chip pad oxide layer growth process Mar. 2, 2004
6696326 Cleaning method to prevent watermarks Feb. 24, 2004
6693047 Method for recycling semiconductor wafers having carbon doped low-k dielectric layers Feb. 17, 2004
6689646 Plasma method for fabricating oxide thin films Feb. 10, 2004
6689702 High dielectric constant metal oxide gate dielectrics Feb. 10, 2004
6689675 Method for making a semiconductor device having a high-k gate dielectric Feb. 10, 2004
6682979 Methods of forming transistors associated with semiconductor substrates Jan. 27, 2004
6680225 Method for manufacturing a semiconductor memory Jan. 20, 2004
6680261 Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer Jan. 20, 2004
6677254 Processes for making a barrier between a dielectric and a conductor and products produced therefrom Jan. 13, 2004
6670242 Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer Dec. 30, 2003
6667197 Method for differential oxidation rate reduction for n-type and p-type materials Dec. 23, 2003
6667232 Thin dielectric layers and non-thermal formation thereof Dec. 23, 2003
6664201 Method of manufacturing anti-reflection layer Dec. 16, 2003

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15










 
 
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