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Class Information
Number: 438/770
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) > Oxidation
Description: Processes wherein the external agent supplies oxygen which reacts with the silicon substrate region to form a compound therewith.










Sub-classes under this class:

Class Number Class Name Patents
438/774 In atmosphere containing halogen 132
438/773 In atmosphere containing water vapor (i.e., wet oxidation) 224
438/771 Using electromagnetic or wave energy 192


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Patent Number Title Of Patent Date Issued
7439165 Method of fabricating tensile strained layers and compressive strain layers for a CMOS device Oct. 21, 2008
7435690 Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy Oct. 14, 2008
7435691 Micromechanical component and suitable method for its manufacture Oct. 14, 2008
7429539 Nitriding method of gate oxide film Sep. 30, 2008
7425480 Semiconductor device and method of manufacture thereof Sep. 16, 2008
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Sep. 2, 2008
7410910 Lanthanum aluminum oxynitride dielectric films Aug. 12, 2008
7410911 Method for stabilizing high pressure oxidation of a semiconductor device Aug. 12, 2008
7396729 Methods of forming semiconductor devices having a trench with beveled corners Jul. 8, 2008
7387972 Reducing nitrogen concentration with in-situ steam generation Jun. 17, 2008
7381620 Oxygen elimination for device processing Jun. 3, 2008
7381657 Biased pulse DC reactive sputtering of oxide films Jun. 3, 2008
7381658 Encapsulation of nano-dimensional structures by oxidation Jun. 3, 2008
7378319 Method of forming double gate dielectric layers and semiconductor device having the same May. 27, 2008
7371630 Patterned backside stress engineering for transistor performance optimization May. 13, 2008
7368400 Method for forming oxide film in semiconductor device May. 6, 2008
7365028 Methods of forming metal oxide and semimetal oxide Apr. 29, 2008
7358171 Method to chemically remove metal impurities from polycide gate sidewalls Apr. 15, 2008
7351668 Film formation method and apparatus for semiconductor process Apr. 1, 2008
7338850 Method for manufacturing device isolation film of semiconductor device Mar. 4, 2008
7335606 Silicide formed from ternary metal alloy films Feb. 26, 2008
7312139 Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device Dec. 25, 2007
7307026 Method of forming an epitaxial layer for raised drain and source regions by removing contaminations Dec. 11, 2007
7303946 Method of manufacturing a semiconductor device using an oxidation process Dec. 4, 2007
7304002 Method of oxidizing member to be treated Dec. 4, 2007
7304003 Oxidizing method and oxidizing unit for object to be processed Dec. 4, 2007
7300847 MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness Nov. 27, 2007
7291566 Barrier layer for a processing element and a method of forming the same Nov. 6, 2007
7288490 Increased alignment in carbon nanotube growth Oct. 30, 2007
7282131 Methods of electrochemically treating semiconductor substrates Oct. 16, 2007
7282457 Apparatus for stabilizing high pressure oxidation of a semiconductor device Oct. 16, 2007
7279435 Apparatus for stabilizing high pressure oxidation of a semiconductor device Oct. 9, 2007
7273819 Method and apparatus for processing semiconductor substrates Sep. 25, 2007
7256114 Process for oxide cap formation in semiconductor manufacturing Aug. 14, 2007
7238625 Method for processing a semiconductor device comprising a silicon-oxy-nitride dielectric layer Jul. 3, 2007
7235498 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N.sub.2O and O.sub.3 Jun. 26, 2007
7235497 Selective oxidation methods and transistor fabrication methods Jun. 26, 2007
7232772 Substrate processing method Jun. 19, 2007
7232728 High quality oxide on an epitaxial layer Jun. 19, 2007
7217578 Advanced process control of thermal oxidation processes, and systems for accomplishing same May. 15, 2007
7214628 Plasma gate oxidation process using pulsed RF source power May. 8, 2007
7211523 Method for forming field oxide May. 1, 2007
7202184 Method for fabricating semiconductor device Apr. 10, 2007
7192887 Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same Mar. 20, 2007
7192828 Capacitor with high dielectric constant materials and method of making Mar. 20, 2007
7189635 Reduction of a feature dimension in a nano-scale device Mar. 13, 2007
7186664 Methods and structures for metal interconnections in integrated circuits Mar. 6, 2007
7186608 Masked nitrogen enhanced gate oxide Mar. 6, 2007
7183223 Methods for forming small contacts Feb. 27, 2007
7183216 Methods to form oxide-filled trenches Feb. 27, 2007

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16










 
 
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