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Class Information
Number: 438/770
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) > Oxidation
Description: Processes wherein the external agent supplies oxygen which reacts with the silicon substrate region to form a compound therewith.










Sub-classes under this class:

Class Number Class Name Patents
438/774 In atmosphere containing halogen 128
438/773 In atmosphere containing water vapor (i.e., wet oxidation) 218
438/771 Using electromagnetic or wave energy 180


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
7569487 Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices Aug. 4, 2009
7569494 Apparatus and method for deposition of thin films Aug. 4, 2009
7563628 Fabrication of optical waveguide devices Jul. 21, 2009
7563697 Method for producing SOI wafer Jul. 21, 2009
7553704 Antifuse element and method of manufacture Jun. 30, 2009
7541246 Method of manufacturing semiconductor device Jun. 2, 2009
7541297 Method and system for improving dielectric film quality for void free gap fill Jun. 2, 2009
7541295 Method of manufacturing semiconductor device Jun. 2, 2009
7538008 Method for producing a layer structure May. 26, 2009
7534730 Producing method of semiconductor device and substrate processing apparatus May. 19, 2009
7534731 Method for growing a thin oxynitride film on a substrate May. 19, 2009
7531431 Methods for reducing contamination of semiconductor devices and materials during wafer processing May. 12, 2009
7528015 Tunable antifuse element and method of manufacture May. 5, 2009
7528041 Method of manufacturing semiconductor device that utilizes oxidation prevention film to form thick and thin gate insulator portions May. 5, 2009
7524744 Method of producing SOI wafer and SOI wafer Apr. 28, 2009
7524745 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure Apr. 28, 2009
7521325 Semiconductor device and method for fabricating the same Apr. 21, 2009
7521375 Method of forming an oxinitride layer Apr. 21, 2009
7517813 Two-step oxidation process for semiconductor wafers Apr. 14, 2009
7514315 Methods of forming capacitor structures having aluminum oxide diffusion barriers Apr. 7, 2009
7507676 Film formation method and apparatus for semiconductor process Mar. 24, 2009
7498270 Method of forming a silicon oxynitride film with tensile stress Mar. 3, 2009
7494940 Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices Feb. 24, 2009
7491656 Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film Feb. 17, 2009
7488652 Manufacturing method of gate oxidation films Feb. 10, 2009
7446052 Method for forming insulation film Nov. 4, 2008
7442655 Selective oxidation methods and transistor fabrication methods Oct. 28, 2008
7442571 Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having th Oct. 28, 2008
7439165 Method of fabricating tensile strained layers and compressive strain layers for a CMOS device Oct. 21, 2008
7435690 Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy Oct. 14, 2008
7435691 Micromechanical component and suitable method for its manufacture Oct. 14, 2008
7429539 Nitriding method of gate oxide film Sep. 30, 2008
7425480 Semiconductor device and method of manufacture thereof Sep. 16, 2008
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Sep. 2, 2008
7410911 Method for stabilizing high pressure oxidation of a semiconductor device Aug. 12, 2008
7410910 Lanthanum aluminum oxynitride dielectric films Aug. 12, 2008
7396729 Methods of forming semiconductor devices having a trench with beveled corners Jul. 8, 2008
7387972 Reducing nitrogen concentration with in-situ steam generation Jun. 17, 2008
7381658 Encapsulation of nano-dimensional structures by oxidation Jun. 3, 2008
7381620 Oxygen elimination for device processing Jun. 3, 2008
7381657 Biased pulse DC reactive sputtering of oxide films Jun. 3, 2008
7378319 Method of forming double gate dielectric layers and semiconductor device having the same May. 27, 2008
7371630 Patterned backside stress engineering for transistor performance optimization May. 13, 2008
7368400 Method for forming oxide film in semiconductor device May. 6, 2008
7365028 Methods of forming metal oxide and semimetal oxide Apr. 29, 2008
7358171 Method to chemically remove metal impurities from polycide gate sidewalls Apr. 15, 2008
7351668 Film formation method and apparatus for semiconductor process Apr. 1, 2008
7338850 Method for manufacturing device isolation film of semiconductor device Mar. 4, 2008
7335606 Silicide formed from ternary metal alloy films Feb. 26, 2008
7312139 Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device Dec. 25, 2007

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