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Class Information
Number: 438/767
Name: Semiconductor device manufacturing: process > Coating of substrate containing semiconductor region or of semiconductor substrate > By reaction with substrate > Compound semiconductor substrate
Description: Processes wherein the substrate region reacting with the external agent is a compound semiconductor.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8691669 Vapor deposition reactor for forming thin film Apr. 8, 2014
8575033 Carbosilane precursors for low temperature film deposition Nov. 5, 2013
8557681 III-nitride wafer fabrication Oct. 15, 2013
8507367 Separation of semiconductor devices Aug. 13, 2013
8492290 Fabrication of silicon oxide and oxynitride having sub-nanometer thickness Jul. 23, 2013
8470692 Method and device for preparing compound semiconductor film Jun. 25, 2013
8455370 Transfer of high temperature wafers Jun. 4, 2013
8440571 Methods for deposition of silicon carbide and silicon carbonitride films May. 14, 2013
8367528 Cyclical epitaxial deposition and etch Feb. 5, 2013
8338833 Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same Dec. 25, 2012
8330275 Interconnect structure for semiconductor devices Dec. 11, 2012
8318612 Methods for improving the quality of group III-nitride materials and structures produced by the methods Nov. 27, 2012
8242030 Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation Aug. 14, 2012
8153536 Transfer of high temperature wafers Apr. 10, 2012
8143147 Methods and systems for forming thin films Mar. 27, 2012
8097481 Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) Jan. 17, 2012
8071482 Manufacturing method of a silicon carbide semiconductor device Dec. 6, 2011
8053784 Silicon carbide semiconductor device and method for manufacturing the same Nov. 8, 2011
8053356 Interconnect structure for semiconductor devices Nov. 8, 2011
7993966 Method for manufacturing silicon carbide semiconductor device having high channel mobility Aug. 9, 2011
7989295 Method of manufacturing semiconductor device Aug. 2, 2011
7943460 High-K metal gate CMOS May. 17, 2011
7915178 Passivation of aluminum nitride substrates Mar. 29, 2011
7911014 On chip antenna and method of manufacturing the same Mar. 22, 2011
7902025 Method of manufacturing semiconductor device Mar. 8, 2011
7867801 Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting dev Jan. 11, 2011
7824929 Method for producing group III nitride-based compound semiconductor Nov. 2, 2010
7820534 Method of manufacturing silicon carbide semiconductor device Oct. 26, 2010
7793611 Film growth system and method Sep. 14, 2010
7790627 Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film Sep. 7, 2010
7785995 Semiconductor buffer structures Aug. 31, 2010
7767596 Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same Aug. 3, 2010
7749785 Manufacturing method of group III nitride semiconductor light-emitting device Jul. 6, 2010
7750371 Silicon germanium heterojunction bipolar transistor structure and method Jul. 6, 2010
7700161 Film growth system and method Apr. 20, 2010
7655556 Interconnect structures for semiconductor devices Feb. 2, 2010
7601621 Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode Oct. 13, 2009
7557018 Element fabrication substrate Jul. 7, 2009
7547643 Techniques promoting adhesion of porous low K film to underlying barrier layer Jun. 16, 2009
7517812 Method and system for forming a nitrided germanium-containing layer using plasma processing Apr. 14, 2009
7476627 Surface preparation prior to deposition Jan. 13, 2009
7459396 Method for thin film deposition using multi-tray film precursor evaporation system Dec. 2, 2008
7446052 Method for forming insulation film Nov. 4, 2008
7407893 Liquid precursors for the CVD deposition of amorphous carbon films Aug. 5, 2008
7358162 Method of manufacturing semiconductor device Apr. 15, 2008
7338828 Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) Mar. 4, 2008
7327036 Method for depositing a group III-nitride material on a silicon substrate and device therefor Feb. 5, 2008
7312156 Method and apparatus for supporting a semiconductor wafer during processing Dec. 25, 2007
7309660 Buffer layer for selective SiGe growth for uniform nucleation Dec. 18, 2007
7294520 Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body Nov. 13, 2007

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