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Class Information
Number: 438/76
Name: Semiconductor device manufacturing: process > Making device or circuit responsive to nonelectrical signal > Responsive to electromagnetic radiation > Making electromagnetic responsive array > Charge transfer device (e.g., ccd, etc.) > Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
Description: Process for making a charge transfer device wherein the transfer of such charge minima is by majority carriers of the semiconductive material (i.e., by electrons in n-type material or by holes in p-type semiconductive material) and such transfer is in response to electromagnetic radiation incident to the device.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8618459 Image sensor array for the back side illumination with junction gate photodiode pixels Dec. 31, 2013
8575531 Image sensor array for back side illumination with global shutter using a junction gate photodiode Nov. 5, 2013
8558234 Low voltage low light imager and photodetector Oct. 15, 2013
8461630 Semiconductor device and manufacturing method thereof Jun. 11, 2013
8435823 Solid-state imaging device and method of manufacturing the same May. 7, 2013
8119474 High performance capacitors in planar back gates CMOS Feb. 21, 2012
8105924 Deep trench based far subcollector reachthrough Jan. 31, 2012
8003506 Single poly CMOS imager Aug. 23, 2011
7977200 Charge breakdown avoidance for MIM elements in SOI base technology and method Jul. 12, 2011
7923627 Photovoltaic element, photovoltaic module comprising photovoltaic element, and method of fabricating photovoltaic element Apr. 12, 2011
7691734 Deep trench based far subcollector reachthrough Apr. 6, 2010
7645646 Manufacture of electronic devices comprising thin-film circuit elements Jan. 12, 2010
7557024 Single poly CMOS imager Jul. 7, 2009
7504278 Image sensor and method for manufacturing the same Mar. 17, 2009
7470560 Image sensor having a charge storage region provided within an implant region Dec. 30, 2008
6927091 Method for fabricating solid-state imaging device Aug. 9, 2005
6902945 Tapered threshold reset FET for CMOS imagers Jun. 7, 2005
6852565 CMOS image sensor with substrate noise barrier Feb. 8, 2005
6833282 Method of forming an optical sensor device having a composite sandwich structure of alternating titanium and titanium nitride layers Dec. 21, 2004
6794219 Method for creating a lateral overflow drain, anti-blooming structure in a charge coupled device Sep. 21, 2004
6657716 Method and apparatus for detecting necking over field/active transitions Dec. 2, 2003
6210990 Method for fabricating solid state image sensor Apr. 3, 2001
6194748 MOSFET with suppressed gate-edge fringing field effect Feb. 27, 2001
5981309 Method for fabricating charge coupled device image sensor Nov. 9, 1999
5943556 Method for manufacturing an electric charge transfer device Aug. 24, 1999
5877520 Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element Mar. 2, 1999
5858812 Method for fabricating interline-transfer CCD image sensor Jan. 12, 1999
5837563 Self aligned barrier process for small pixel virtual phase charged coupled devices Nov. 17, 1998
5804465 Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumulation mode Sep. 8, 1998
5702971 Self-aligned LOD antiblooming structure for solid-state imagers Dec. 30, 1997
5679597 Method for manufacturing CCD image pickup device Oct. 21, 1997
5607872 Method of fabricating charge coupled device Mar. 4, 1997
5593910 Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device Jan. 14, 1997
5583071 Image sensor with improved output region for superior charge transfer characteristics Dec. 10, 1996
5578511 Method of making signal charge transfer devices Nov. 26, 1996
5516714 Method of making output terminal of a solid-state image device May. 14, 1996
5488010 Method of fabricating sidewall charge-coupled device with trench isolation Jan. 30, 1996
5441910 Method for manufacturing CCD type solid image pickup device using self-alignment process Aug. 15, 1995
5369039 Method of making charge coupled device/charge super sweep image system Nov. 29, 1994
5202282 Method for producing a self-alignment type CCD sensor Apr. 13, 1993
5185271 Method of manufacturing a buried-channel charge-coupled image sensor Feb. 9, 1993
5151380 Method of making top buss virtual phase frame interline transfer CCD image sensor Sep. 29, 1992
5134087 Fabricating a two-phase CCD imager cell for TV interlace operation Jul. 28, 1992
5118631 Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof Jun. 2, 1992
5086010 Method for manufacturing solid state image sensing device formed of charge coupled devices on side surfaces of trenches Feb. 4, 1992
4992392 Method of making a virtual phase CCD Feb. 12, 1991
4952523 Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface Aug. 28, 1990
4892842 Method of treating an integrated circuit Jan. 9, 1990
4859624 Manufacturing method of semiconductor device having CCD and peripheral circuit Aug. 22, 1989
4851890 Solid-state image sensor Jul. 25, 1989

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