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Class Information
Number: 438/757
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Silicon nitride
Description: Processes wherein the material undergoing wet chemical etching is a compound of silicon and nitrogen.


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
6265304 Controlling an etching process of multiple layers based upon thickness ratio of the dielectric layers Jul. 24, 2001
6258678 Use of a wet etch dip step used as part of a self-aligned contact opening procedure Jul. 10, 2001
6258734 Method for patterning semiconductor devices on a silicon substrate using oxynitride film Jul. 10, 2001
6255123 Methods of monitoring and maintaining concentrations of selected species in solutions during semiconductor processing Jul. 3, 2001
6238590 Tribochemical polishing of ceramics and metals May. 29, 2001
6228770 Method to form self-sealing air gaps between metal interconnects May. 8, 2001
6221785 Method for forming shallow trench isolations Apr. 24, 2001
6218305 Composition and method for polishing a composite of silica and silicon nitride Apr. 17, 2001
6214713 Two step cap nitride deposition for forming gate electrodes Apr. 10, 2001
6211057 Method for manufacturing arch air gap in multilevel interconnection Apr. 3, 2001
6200909 Method for selective etching of antireflective coatings Mar. 13, 2001
6194320 Method for preparing a semiconductor device Feb. 27, 2001
6191037 Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes Feb. 20, 2001
6177355 Pad etch process capable of thick titanium nitride arc removal Jan. 23, 2001
6174820 Use of silicon oxynitride as a sacrificial material for microelectromechanical devices Jan. 16, 2001
6171973 Process for etching the gate in MOS technology using a SiON-based hard mask Jan. 9, 2001
6162370 Composition and method for selectively etching a silicon nitride film Dec. 19, 2000
6156618 Method for fabricating thin film resistor Dec. 5, 2000
6153531 Method for preventing electrochemical erosion of interconnect structures Nov. 28, 2000
6117351 Method for etching dielectric films Sep. 12, 2000
6103637 Method for selective etching of antireflective coatings Aug. 15, 2000
6096233 Method for wet etching of thin film Aug. 1, 2000
6090715 Masking process for forming self-aligned dual wells or self-aligned field-doping regions Jul. 18, 2000
6087273 Process for selectively etching silicon nitride in the presence of silicon oxide Jul. 11, 2000
6074949 Method of preventing copper dendrite formation and growth Jun. 13, 2000
6069082 Method to prevent dishing in damascene CMP process May. 30, 2000
6069056 Method of forming isolation structure May. 30, 2000
6066267 Etching of silicon nitride May. 23, 2000
6063708 Method for forming isolation layer in semiconductor device May. 16, 2000
6063713 Methods for forming silicon nitride layers on silicon-comprising substrates May. 16, 2000
6054394 Method of fabricating a dynamic random access memory capacitor Apr. 25, 2000
6051508 Manufacturing method of semiconductor device Apr. 18, 2000
6037269 Etching methods of silicon nitride films employed in microelectronic devices Mar. 14, 2000
6033996 Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide Mar. 7, 2000
6022751 Production of electronic device Feb. 8, 2000
5990021 Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture Nov. 23, 1999
5981401 Method for selective etching of anitreflective coatings Nov. 9, 1999
5965465 Etching of silicon nitride Oct. 12, 1999
5942450 Method of fabricating semiconductor device Aug. 24, 1999
5933739 Self-aligned silicidation structure and method of formation thereof Aug. 3, 1999
5930611 Method for fabricating MIS device having GATE insulator of GaS or gallium sulfide Jul. 27, 1999
5918134 Method of reducing transistor channel length with oxidation inhibiting spacers Jun. 29, 1999
5891354 Methods of etching through wafers and substrates with a composite etch stop layer Apr. 6, 1999
5885903 Process for selectively etching silicon nitride in the presence of silicon oxide Mar. 23, 1999
5882978 Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor Mar. 16, 1999
5883012 Method of etching a trench into a semiconductor substrate Mar. 16, 1999
5872055 Method for fabricating polysilicon conducting wires Feb. 16, 1999
5856003 Method for forming pseudo buried layer for sub-micron bipolar or BiCMOS device Jan. 5, 1999
5843850 Method of stripping a nitride layer from a wafer and wet etching apparatus using the same Dec. 1, 1998
5821170 Method for etching an insulating material Oct. 13, 1998

1 2 3 4 5


 
 
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