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Class Information
Number: 438/757
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Silicon nitride
Description: Processes wherein the material undergoing wet chemical etching is a compound of silicon and nitrogen.


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
6579807 Method for forming isolation regions on semiconductor device Jun. 17, 2003
6576151 Etching of silicon nitride by anhydrous halogen gas Jun. 10, 2003
6562727 Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and water May. 13, 2003
6554002 Method for removing etching residues Apr. 29, 2003
6541382 Lining and corner rounding method for shallow trench isolation Apr. 1, 2003
6521540 Method for making self-aligned contacts to source/drain without a hard mask layer Feb. 18, 2003
6498079 Method for selective source diffusion Dec. 24, 2002
6498105 Method of forming fine patterns of a semiconductor device Dec. 24, 2002
6497827 Method for etching dielectric films Dec. 24, 2002
6495472 Method for avoiding erosion of conductor structure during removing etching residues Dec. 17, 2002
6492273 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies Dec. 10, 2002
6489251 Method of forming a slope lateral structure Dec. 3, 2002
6479397 Method for forming isolation regions on semiconductor device Nov. 12, 2002
6479380 Semiconductor device and manufacturing method thereof Nov. 12, 2002
6475403 Etching method and apparatus Nov. 5, 2002
6472271 Planarization method of memory unit of flash memory Oct. 29, 2002
6468910 Slurry for chemical mechanical polishing silicon dioxide Oct. 22, 2002
6455433 Method for forming square-shouldered sidewall spacers and devices fabricated Sep. 24, 2002
6444588 Anti-reflective coatings and methods regarding same Sep. 3, 2002
6440872 Method for hybrid DRAM cell utilizing confined strap isolation Aug. 27, 2002
6436833 Method for pre-STI-CMP planarization using poly-si thermal oxidation Aug. 20, 2002
6436791 Method of manufacturing a very deep STI (shallow trench isolation) Aug. 20, 2002
6432836 Cleaning method for semiconductor substrate and cleaning solution Aug. 13, 2002
6429132 Combination CMP-etch method for forming a thin planar layer over the surface of a device Aug. 6, 2002
6423618 Method of manufacturing trench gate structure Jul. 23, 2002
6407005 Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active region Jun. 18, 2002
6403484 Method to achieve STI planarization Jun. 11, 2002
6403496 Method for forming shallow trench isolations Jun. 11, 2002
6403492 Method of manufacturing semiconductor devices with trench isolation Jun. 11, 2002
6391793 Compositions for etching silicon with high selectivity to oxides and methods of using same May. 21, 2002
6368982 Pattern reduction by trimming a plurality of layers of different handmask materials Apr. 9, 2002
6352939 Method for improving the electrical properties of a gate oxide Mar. 5, 2002
6348419 Modification of the wet characteristics of deposited layers and in-line control Feb. 19, 2002
6340625 Method for simultaneously forming thinner and thicker parts of a dual oxide layer having varying thicknesses Jan. 22, 2002
6337292 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby Jan. 8, 2002
6326313 Method and apparatus for partial drain during a nitride strip process step Dec. 4, 2001
6323138 Capacitor, methods of forming capacitors, methods for forming silicon nitride layers on silicon-comprising substrates, and methods of densifying silicon nitride layers Nov. 27, 2001
6323139 Semiconductor processing methods of forming photoresist over silicon nitride materials Nov. 27, 2001
6319839 Approach to form an inter-polysilicon oxide (IPO) layer for charge coupled devices Nov. 20, 2001
6303514 Composition and method for selectively etching a silicon nitride film Oct. 16, 2001
6300253 Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials Oct. 9, 2001
6287936 Method of forming porous silicon in a silicon substrate, in particular for improving the performance of an inductive circuit Sep. 11, 2001
6287983 Selective nitride etching with silicate ion pre-loading Sep. 11, 2001
6281130 Method for developing ultra-thin resist films Aug. 28, 2001
6277757 Methods to modify wet by dry etched via profile Aug. 21, 2001
6277725 Method for fabricating passivation layer on metal pad Aug. 21, 2001
6277755 Method for fabricating an interconnect Aug. 21, 2001
6271143 Method for preventing trench fill erosion Aug. 7, 2001
6268295 Method of manufacturing semiconductor device Jul. 31, 2001
6265304 Controlling an etching process of multiple layers based upon thickness ratio of the dielectric layers Jul. 24, 2001

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