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Class Information
Number: 438/756
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Silicon oxide
Description: Processes wherein the material undergoing wet chemical etching is a compound of silicon and oxygen.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6271143 |
Method for preventing trench fill erosion |
Aug. 7, 2001 |
| 6261952 |
Method of forming copper interconnects with reduced in-line diffusion |
Jul. 17, 2001 |
| 6261969 |
Method of manufacturing semiconductor apparatus and apparatus thereof |
Jul. 17, 2001 |
| 6255219 |
Method for fabricating high-performance submicron MOSFET with lateral asymmetric channel |
Jul. 3, 2001 |
| 6254796 |
Selective etching of silicate |
Jul. 3, 2001 |
| 6245682 |
Removal of SiON ARC film after poly photo and etch |
Jun. 12, 2001 |
| 6240933 |
Methods for cleaning semiconductor surfaces |
Jun. 5, 2001 |
| 6242331 |
Method to reduce device contact resistance using a hydrogen peroxide treatment |
Jun. 5, 2001 |
| 6238580 |
Method of HF vapor release of microstructures |
May. 29, 2001 |
| 6238590 |
Tribochemical polishing of ceramics and metals |
May. 29, 2001 |
| 6235638 |
Simplified etching technique for producing multiple undercut profiles |
May. 22, 2001 |
| 6232240 |
Method for fabricating a capacitor |
May. 15, 2001 |
| 6228770 |
Method to form self-sealing air gaps between metal interconnects |
May. 8, 2001 |
| 6221785 |
Method for forming shallow trench isolations |
Apr. 24, 2001 |
| 6218305 |
Composition and method for polishing a composite of silica and silicon nitride |
Apr. 17, 2001 |
| 6218268 |
Two-step borophosphosilicate glass deposition process and related devices and apparatus |
Apr. 17, 2001 |
| 6211057 |
Method for manufacturing arch air gap in multilevel interconnection |
Apr. 3, 2001 |
| 6207517 |
Method of fabricating a semiconductor insulation layer and a semiconductor component containing the semiconductor insulation layer |
Mar. 27, 2001 |
| 6200909 |
Method for selective etching of antireflective coatings |
Mar. 13, 2001 |
| 6200897 |
Method for manufacturing even dielectric layer |
Mar. 13, 2001 |
| 6197700 |
Fabrication method for bottom electrode of capacitor |
Mar. 6, 2001 |
| 6194320 |
Method for preparing a semiconductor device |
Feb. 27, 2001 |
| 6192899 |
Etch residue clean with aqueous HF/organic solution |
Feb. 27, 2001 |
| 6191037 |
Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes |
Feb. 20, 2001 |
| 6191047 |
Etching process using a buffer layer |
Feb. 20, 2001 |
| 6187216 |
Method for etching a dielectric layer over a semiconductor substrate |
Feb. 13, 2001 |
| 6184153 |
Semiconductor material produced by improved etch process which protects metal |
Feb. 6, 2001 |
| 6174820 |
Use of silicon oxynitride as a sacrificial material for microelectromechanical devices |
Jan. 16, 2001 |
| 6174814 |
Method for producing a crack stop for interlevel dielectric layers |
Jan. 16, 2001 |
| 6171968 |
Method of forming damascene structure having borderless via design |
Jan. 9, 2001 |
| 6171975 |
Wet-chemical treatment method, treatment method of semiconductor substrate, and manufacturing method of semiconductor device |
Jan. 9, 2001 |
| 6165867 |
Method to reduce aspect ratio of DRAM peripheral contact |
Dec. 26, 2000 |
| 6162739 |
Process for wet etching of semiconductor wafers |
Dec. 19, 2000 |
| 6162370 |
Composition and method for selectively etching a silicon nitride film |
Dec. 19, 2000 |
| 6153526 |
Method to remove residue in wolfram CMP |
Nov. 28, 2000 |
| 6150227 |
Integrated circuit structure with a gap between resistor film and substrate |
Nov. 21, 2000 |
| 6146937 |
Method of forming a DRAM device utilizing a sacrificial doped oxide layer |
Nov. 14, 2000 |
| 6140203 |
Capacitor constructions and semiconductor processing method of forming capacitor constructions |
Oct. 31, 2000 |
| 6140242 |
Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature |
Oct. 31, 2000 |
| 6140244 |
Method for forming a spacer |
Oct. 31, 2000 |
| 6140254 |
Edge bead removal for nanoporous dielectric silica coatings |
Oct. 31, 2000 |
| 6124181 |
Method for manufacturing bipolar transistor capable of suppressing deterioration of transistor characteristics |
Sep. 26, 2000 |
| 6123088 |
Method and cleaner composition for stripping copper containing residue layers |
Sep. 26, 2000 |
| 6117350 |
Adjustable selectivity etching solutions and methods of etching semiconductor devices using the same |
Sep. 12, 2000 |
| 6117351 |
Method for etching dielectric films |
Sep. 12, 2000 |
| 6117790 |
Method for fabricating a capacitor for a semiconductor memory configuration |
Sep. 12, 2000 |
| 6117796 |
Removal of silicon oxide |
Sep. 12, 2000 |
| 6107201 |
Aluminum spiking inspection method |
Aug. 22, 2000 |
| 6103627 |
Treatment of a surface having an exposed silicon/silica interface |
Aug. 15, 2000 |
| 6103637 |
Method for selective etching of antireflective coatings |
Aug. 15, 2000 |
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