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Class Information
Number: 438/756
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Silicon oxide
Description: Processes wherein the material undergoing wet chemical etching is a compound of silicon and oxygen.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6420275 |
System and method for analyzing a semiconductor surface |
Jul. 16, 2002 |
| 6406998 |
Formation of silicided contact by ion implantation |
Jun. 18, 2002 |
| 6406641 |
Liquid etch endpoint detection and process metrology |
Jun. 18, 2002 |
| 6407005 |
Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active region |
Jun. 18, 2002 |
| 6403492 |
Method of manufacturing semiconductor devices with trench isolation |
Jun. 11, 2002 |
| 6403496 |
Method for forming shallow trench isolations |
Jun. 11, 2002 |
| 6403484 |
Method to achieve STI planarization |
Jun. 11, 2002 |
| 6399504 |
Methods and etchants for etching oxides of silicon with low selectivity |
Jun. 4, 2002 |
| 6395634 |
Glass substrate for magnetic recording medium, magnetic recording medium, and method of manufacturing the same |
May. 28, 2002 |
| 6395638 |
Method for producing a micromembrane pump body |
May. 28, 2002 |
| 6391780 |
Method to prevent copper CMP dishing |
May. 21, 2002 |
| 6391793 |
Compositions for etching silicon with high selectivity to oxides and methods of using same |
May. 21, 2002 |
| 6387813 |
Method for stripping a low dielectric film with high carbon content |
May. 14, 2002 |
| 6383410 |
Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent |
May. 7, 2002 |
| 6380099 |
Porous region removing method and semiconductor substrate manufacturing method |
Apr. 30, 2002 |
| 6376380 |
Method of forming memory circuitry and method of forming memory circuitry comprising a buried bit line array of memory cells |
Apr. 23, 2002 |
| 6373115 |
Micromechanical structure, sensor and method for manufacturing the same |
Apr. 16, 2002 |
| 6372650 |
Method of cleaning substrate and method of manufacturing semiconductor device |
Apr. 16, 2002 |
| 6372602 |
Method of forming a shallow trench isolation structure in a semiconductor device |
Apr. 16, 2002 |
| 6369008 |
Cleaning solutions for removing contaminants from the surfaces of semiconductor substrates and cleaning methods using the same |
Apr. 9, 2002 |
| 6368982 |
Pattern reduction by trimming a plurality of layers of different handmask materials |
Apr. 9, 2002 |
| 6365525 |
Method of fabricating a semiconductor insulation layer |
Apr. 2, 2002 |
| 6358860 |
Line width calibration standard manufacturing and certifying method |
Mar. 19, 2002 |
| 6358761 |
Silicon monitor for detection of H2O2 in acid bath |
Mar. 19, 2002 |
| 6352939 |
Method for improving the electrical properties of a gate oxide |
Mar. 5, 2002 |
| 6352595 |
Method and system for cleaning a chemical mechanical polishing pad |
Mar. 5, 2002 |
| 6348419 |
Modification of the wet characteristics of deposited layers and in-line control |
Feb. 19, 2002 |
| 6333274 |
Method of manufacturing a semiconductor device including a seamless shallow trench isolation step |
Dec. 25, 2001 |
| 6326314 |
Integrated inductor with filled etch |
Dec. 4, 2001 |
| 6319861 |
Method of improving deposition |
Nov. 20, 2001 |
| 6319833 |
Chemically preventing copper dendrite formation and growth by spraying |
Nov. 20, 2001 |
| 6319839 |
Approach to form an inter-polysilicon oxide (IPO) layer for charge coupled devices |
Nov. 20, 2001 |
| 6316370 |
Method for etching doped polysilicon with high selectivity to undoped polysilicon |
Nov. 13, 2001 |
| 6316366 |
Method of polishing using multi-oxidizer slurry |
Nov. 13, 2001 |
| 6313043 |
Manufacture of field emission element |
Nov. 6, 2001 |
| 6303506 |
Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process |
Oct. 16, 2001 |
| 6303514 |
Composition and method for selectively etching a silicon nitride film |
Oct. 16, 2001 |
| 6300186 |
Method of measuring semiconductor device |
Oct. 9, 2001 |
| 6294396 |
Monitoring barrier metal deposition for metal interconnect |
Sep. 25, 2001 |
| 6294478 |
Fabrication process for a semiconductor substrate |
Sep. 25, 2001 |
| 6290863 |
Method and apparatus for etch of a specific subarea of a semiconductor work object |
Sep. 18, 2001 |
| 6287972 |
System and method for residue entrapment utilizing a polish and sacrificial fill for semiconductor fabrication |
Sep. 11, 2001 |
| 6287983 |
Selective nitride etching with silicate ion pre-loading |
Sep. 11, 2001 |
| 6284669 |
Power transistor with silicided gate and contacts |
Sep. 4, 2001 |
| 6284670 |
Method of etching silicon wafer and silicon wafer |
Sep. 4, 2001 |
| 6280651 |
Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent |
Aug. 28, 2001 |
| 6277755 |
Method for fabricating an interconnect |
Aug. 21, 2001 |
| 6277757 |
Methods to modify wet by dry etched via profile |
Aug. 21, 2001 |
| 6277725 |
Method for fabricating passivation layer on metal pad |
Aug. 21, 2001 |
| 6277749 |
Method of manufacturing a semiconductor integrated circuit device |
Aug. 21, 2001 |
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