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Class Information
Number: 438/755
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Electrically conductive material (e.g., metal, conductive oxide, etc.) > Silicide
Description: Processes wherein the material undergoing wet chemical etching is an electrically conductive compound of silicon and a metal atom.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7569482 |
Method for the selective removal of an unsilicided metal |
Aug. 4, 2009 |
| 7550372 |
Method of fabricating conductive lines with silicide layer |
Jun. 23, 2009 |
| 7544616 |
Methods of forming nitride read only memory and word lines thereof |
Jun. 9, 2009 |
| 7544621 |
Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method |
Jun. 9, 2009 |
| 7485558 |
Method of manufacturing semiconductor device |
Feb. 3, 2009 |
| 7482282 |
Use of dilute hydrochloric acid in advanced interconnect contact clean in nickel semiconductor technologies |
Jan. 27, 2009 |
| 7432181 |
Method of forming self-aligned silicides |
Oct. 7, 2008 |
| 7425482 |
Non-volatile memory device and method for fabricating the same |
Sep. 16, 2008 |
| 7402531 |
Method for selectively controlling lengths of nanowires |
Jul. 22, 2008 |
| 7396764 |
Manufacturing method for forming all regions of the gate electrode silicided |
Jul. 8, 2008 |
| 7390754 |
Method of forming a silicide |
Jun. 24, 2008 |
| 7384877 |
Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation |
Jun. 10, 2008 |
| 7375013 |
Semiconductor integrated circuit device and process for manufacturing the same |
May. 20, 2008 |
| 7192835 |
Method of forming a high-k film on a semiconductor device |
Mar. 20, 2007 |
| 7119028 |
Surface imprinted films with carbon nanotubes |
Oct. 10, 2006 |
| 7105458 |
Method of etching semiconductor devices using a hydrogen peroxide-water mixture |
Sep. 12, 2006 |
| 7067417 |
Methods of removing resistive remnants from contact holes using silicidation |
Jun. 27, 2006 |
| 7067391 |
Method to form a metal silicide gate device |
Jun. 27, 2006 |
| 7049245 |
Two-step GC etch for GC profile and process window improvement |
May. 23, 2006 |
| 7018937 |
Compositions for removal of processing byproducts and method for using same |
Mar. 28, 2006 |
| 6964929 |
Method of forming a narrow gate, and product produced thereby |
Nov. 15, 2005 |
| 6946402 |
Fabricating method of polycrystalline silicon thin film transistor with improved electrical characteristics |
Sep. 20, 2005 |
| 6908569 |
Ruthenium silicide wet etch |
Jun. 21, 2005 |
| 6905943 |
Forming a trench to define one or more isolation regions in a semiconductor structure |
Jun. 14, 2005 |
| 6881670 |
Interconnect process and method for removing metal silicide |
Apr. 19, 2005 |
| 6867118 |
Semiconductor memory and method for fabricating the same |
Mar. 15, 2005 |
| 6849543 |
Cobalt silicide formation method employing wet chemical silicon substrate oxidation |
Feb. 1, 2005 |
| 6815235 |
Methods of controlling formation of metal silicide regions, and system for performing same |
Nov. 9, 2004 |
| 6746915 |
Stack-type DRAM memory structure and its manufacturing method |
Jun. 8, 2004 |
| 6723657 |
Method for fabricating a gate stack in very large scale integrated semiconductor memories |
Apr. 20, 2004 |
| 6670281 |
HF etching and oxide scale removal |
Dec. 30, 2003 |
| 6667233 |
Method for forming a silicide layer of semiconductor device |
Dec. 23, 2003 |
| 6624921 |
Micromirror device package fabrication method |
Sep. 23, 2003 |
| 6613673 |
Technique for elimination of pitting on silicon substrate during gate stack etch |
Sep. 2, 2003 |
| 6589884 |
Method of forming an inset in a tungsten silicide layer in a transistor gate stack |
Jul. 8, 2003 |
| 6558986 |
Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method |
May. 6, 2003 |
| 6521540 |
Method for making self-aligned contacts to source/drain without a hard mask layer |
Feb. 18, 2003 |
| 6498110 |
Ruthenium silicide wet etch |
Dec. 24, 2002 |
| 6486067 |
Method for improving the electrical isolation between the contact and gate in a self-aligned contact MOSFET device structure |
Nov. 26, 2002 |
| 6468914 |
Method of forming gate electrode in semiconductor device |
Oct. 22, 2002 |
| 6458711 |
Self-aligned silicide process |
Oct. 1, 2002 |
| 6387815 |
Method of manufacturing semiconductor substrate |
May. 14, 2002 |
| 6335294 |
Wet cleans for cobalt disilicide processing |
Jan. 1, 2002 |
| 6331478 |
Methods for manufacturing semiconductor devices having chamfered metal silicide layers |
Dec. 18, 2001 |
| 6284669 |
Power transistor with silicided gate and contacts |
Sep. 4, 2001 |
| 6221766 |
Method and apparatus for processing refractory metals on semiconductor substrates |
Apr. 24, 2001 |
| 6214713 |
Two step cap nitride deposition for forming gate electrodes |
Apr. 10, 2001 |
| 6200910 |
Selective titanium nitride strip |
Mar. 13, 2001 |
| 6083847 |
Method for manufacturing local interconnect |
Jul. 4, 2000 |
| 5989987 |
Method of forming a self-aligned contact in semiconductor fabrications |
Nov. 23, 1999 |
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