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Class Information
Number: 438/755
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Electrically conductive material (e.g., metal, conductive oxide, etc.) > Silicide
Description: Processes wherein the material undergoing wet chemical etching is an electrically conductive compound of silicon and a metal atom.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8679973 Method of manufacturing semiconductor device Mar. 25, 2014
8563429 Methods of forming a metal silicide layer for semiconductor devices Oct. 22, 2013
8492286 Method of forming E-fuse in replacement metal gate manufacturing process Jul. 23, 2013
8470707 Silicide method Jun. 25, 2013
8466064 Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit device Jun. 18, 2013
8293597 Selective silicide process Oct. 23, 2012
8263965 Single-crystal semiconductor layer with heteroatomic macro-network Sep. 11, 2012
8257994 Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer Sep. 4, 2012
8143152 Manufacturing method of semiconductor device having self-aligned contact connected to silicide layer on substrate surface Mar. 27, 2012
8030210 Contact barrier structure and manufacturing methods Oct. 4, 2011
7988876 Method for reducing and homogenizing the thickness of a semiconductor layer which lies on the surface of an electrically insulating material Aug. 2, 2011
7977772 Hybrid metal fully silicided (FUSI) gate Jul. 12, 2011
7927942 Selective silicide process Apr. 19, 2011
7923375 Method for manufacturing semiconductor device Apr. 12, 2011
7867901 Method for forming silicide in semiconductor device Jan. 11, 2011
7718532 Method of forming a high-k film on a semiconductor device May. 18, 2010
7696586 Cobal disilicide structure Apr. 13, 2010
7648917 Manufacturing method of solid-state imaging device Jan. 19, 2010
7632744 Semiconductor integrated circuit device and process for manufacturing the same Dec. 15, 2009
7569482 Method for the selective removal of an unsilicided metal Aug. 4, 2009
7550372 Method of fabricating conductive lines with silicide layer Jun. 23, 2009
7544616 Methods of forming nitride read only memory and word lines thereof Jun. 9, 2009
7544621 Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method Jun. 9, 2009
7485558 Method of manufacturing semiconductor device Feb. 3, 2009
7482282 Use of dilute hydrochloric acid in advanced interconnect contact clean in nickel semiconductor technologies Jan. 27, 2009
7432181 Method of forming self-aligned silicides Oct. 7, 2008
7425482 Non-volatile memory device and method for fabricating the same Sep. 16, 2008
7402531 Method for selectively controlling lengths of nanowires Jul. 22, 2008
7396764 Manufacturing method for forming all regions of the gate electrode silicided Jul. 8, 2008
7390754 Method of forming a silicide Jun. 24, 2008
7384877 Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation Jun. 10, 2008
7375013 Semiconductor integrated circuit device and process for manufacturing the same May. 20, 2008
7192835 Method of forming a high-k film on a semiconductor device Mar. 20, 2007
7119028 Surface imprinted films with carbon nanotubes Oct. 10, 2006
7105458 Method of etching semiconductor devices using a hydrogen peroxide-water mixture Sep. 12, 2006
7067391 Method to form a metal silicide gate device Jun. 27, 2006
7067417 Methods of removing resistive remnants from contact holes using silicidation Jun. 27, 2006
7049245 Two-step GC etch for GC profile and process window improvement May. 23, 2006
7018937 Compositions for removal of processing byproducts and method for using same Mar. 28, 2006
6964929 Method of forming a narrow gate, and product produced thereby Nov. 15, 2005
6946402 Fabricating method of polycrystalline silicon thin film transistor with improved electrical characteristics Sep. 20, 2005
6908569 Ruthenium silicide wet etch Jun. 21, 2005
6905943 Forming a trench to define one or more isolation regions in a semiconductor structure Jun. 14, 2005
6881670 Interconnect process and method for removing metal silicide Apr. 19, 2005
6867118 Semiconductor memory and method for fabricating the same Mar. 15, 2005
6849543 Cobalt silicide formation method employing wet chemical silicon substrate oxidation Feb. 1, 2005
6815235 Methods of controlling formation of metal silicide regions, and system for performing same Nov. 9, 2004
6746915 Stack-type DRAM memory structure and its manufacturing method Jun. 8, 2004
6723657 Method for fabricating a gate stack in very large scale integrated semiconductor memories Apr. 20, 2004
6670281 HF etching and oxide scale removal Dec. 30, 2003

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