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Class Information
Number: 438/754
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Electrically conductive material (e.g., metal, conductive oxide, etc.)
Description: Processes wherein the material undergoing wet chemical etching is an electrically conductive material.


Sub-classes under this class:

Class Number Class Name Patents
438/755 Silicide 53


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
5990021 Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture Nov. 23, 1999
5968850 Wiring using chromium nitride and methods of fabrication therefor, liquid crystal display panels using the same wiring and methods of fabrication therefor Oct. 19, 1999
5963832 Removal of metal cusp for improved contact fill Oct. 5, 1999
5955384 Method of fabricating semiconductor device Sep. 21, 1999
5942448 Method of making contacts on an integrated circuit Aug. 24, 1999
5935871 Process for forming a semiconductor device Aug. 10, 1999
5933757 Etch process selective to cobalt silicide for formation of integrated circuit structures Aug. 3, 1999
5928968 Semiconductor pressure transducer structures and methods for making the same Jul. 27, 1999
5918134 Method of reducing transistor channel length with oxidation inhibiting spacers Jun. 29, 1999
5904859 Flip chip metallization May. 18, 1999
5902126 Methods for forming integrated circuit capacitor electrodes including surrounding insulating sidewalls and spacers May. 11, 1999
5897379 Low temperature system and method for CVD copper removal Apr. 27, 1999
5896869 Semiconductor package having etched-back silver-copper braze Apr. 27, 1999
5893756 Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing Apr. 13, 1999
5888903 Self-aligned silicide process Mar. 30, 1999
5885901 Rinsing solution after resist stripping process and method for manufacturing semiconductor device Mar. 23, 1999
5885888 Etching material and etching process Mar. 23, 1999
5882425 Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching Mar. 16, 1999
5874358 Via hole profile and method of fabrication Feb. 23, 1999
5858257 Method for wet etching and device used therein Jan. 12, 1999
5840629 Copper chemical mechanical polishing slurry utilizing a chromate oxidant Nov. 24, 1998
5827784 Method for improving contact openings during the manufacture of an integrated circuit Oct. 27, 1998
5783868 Extended bond pads with a plurality of perforations Jul. 21, 1998
5773364 Method for using ammonium salt slurries for chemical mechanical polishing (CMP) Jun. 30, 1998
5773359 Interconnect system and method of fabrication Jun. 30, 1998
5766499 Method of making a circuitized substrate Jun. 16, 1998
5759437 Etching of Ti-W for C4 rework Jun. 2, 1998
5731245 High aspect ratio low resistivity lines/vias with a tungsten-germanium alloy hard cap Mar. 24, 1998
5714407 Etching agent, electronic device and method of manufacturing the device Feb. 3, 1998
5688366 Etching method, method of producing a semiconductor device, and etchant therefor Nov. 18, 1997
5670062 Method for producing tapered lines Sep. 23, 1997
5670019 Removal process for tungsten etchback precipitates Sep. 23, 1997
5670016 Method for cleaning substrate prior to tungsten deposition Sep. 23, 1997
5654244 Process for producing semiconductor strain-sensitive sensor Aug. 5, 1997
5639344 Etching material and etching process Jun. 17, 1997
5587103 Composition, and method for using same, for etching metallic alloys from a substrate Dec. 24, 1996
5538921 Integrated circuit fabrication Jul. 23, 1996
5538921 Integrated circuit fabrication Jul. 23, 1996
5521119 Post treatment of tungsten etching back May. 28, 1996
5508229 Method for forming solder bumps in semiconductor devices Apr. 16, 1996
5464791 Method of fabricating a micro-trench storage capacitor Nov. 7, 1995
5462638 Selective etching of TiW for C4 fabrication Oct. 31, 1995
5462891 Process for manufacturing a semiconductor device using NH.sub.4 OH-H.sub.2 O.sub.2 based etchant for Ti based thin film Oct. 31, 1995
5445986 Method of forming a roughened surface capacitor with two etching steps Aug. 29, 1995
5409567 Method of etching copper layers Apr. 25, 1995
5376235 Method to eliminate corrosion in conductive elements Dec. 27, 1994
5376231 Substrate for recording head, recording head and method for producing same Dec. 27, 1994
5352331 Cermet etch technique for integrated circuits Oct. 4, 1994
5350484 Method for the anisotropic etching of metal films in the fabrication of interconnects Sep. 27, 1994
5277756 Post fabrication processing of semiconductor chips Jan. 11, 1994

1 2 3 4 5 6 7 8


 
 
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