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Class Information
Number: 438/752
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Germanium
Description: Processes wherein the material undergoing wet chemical etching is germanium (Ge).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608548 |
Method for cleaning a multilayer substrate and method for bonding substrates and method for producing a bonded wafer |
Oct. 27, 2009 |
| 7579309 |
Methods for characterizing defects on silicon surfaces and etching composition and treatment process therefor |
Aug. 25, 2009 |
| 7572740 |
Methods for optimizing thin film formation with reactive gases |
Aug. 11, 2009 |
| 7569913 |
Boron etch-stop layer and methods related thereto |
Aug. 4, 2009 |
| 7569482 |
Method for the selective removal of an unsilicided metal |
Aug. 4, 2009 |
| 7569490 |
Electrochemical etching |
Aug. 4, 2009 |
| 7569491 |
Method for enlarging a nano-structure |
Aug. 4, 2009 |
| 7569493 |
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate |
Aug. 4, 2009 |
| 7566659 |
Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the same |
Jul. 28, 2009 |
| 7544585 |
Structure of strained silicon on insulator and method of manufacturing the same |
Jun. 9, 2009 |
| 7504339 |
Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits |
Mar. 17, 2009 |
| 7498214 |
Semiconductor devices and manufacturing methods of the same |
Mar. 3, 2009 |
| 7498229 |
Transistor and in-situ fabrication process |
Mar. 3, 2009 |
| 7495250 |
Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto |
Feb. 24, 2009 |
| 7491612 |
Field effect transistor with a heterostructure and associated production method |
Feb. 17, 2009 |
| 7459374 |
Method of manufacturing a semiconductor heterostructure |
Dec. 2, 2008 |
| 7439165 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device |
Oct. 21, 2008 |
| 7439189 |
Surface treatment after selective etching |
Oct. 21, 2008 |
| 7419908 |
Process for making an array of wells |
Sep. 2, 2008 |
| 7396483 |
Uniform chemical etching method |
Jul. 8, 2008 |
| 7396733 |
Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device |
Jul. 8, 2008 |
| 7378305 |
Semiconductor integrated circuit and fabrication process thereof |
May. 27, 2008 |
| 7378353 |
High selectivity BPSG to TEOS etchant |
May. 27, 2008 |
| 7361574 |
Single-crystal silicon-on-glass from film transfer |
Apr. 22, 2008 |
| 7303949 |
High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
Dec. 4, 2007 |
| 7241707 |
Layered films formed by controlled phase segregation |
Jul. 10, 2007 |
| 7238291 |
Method for removing oxides from a Ge semiconductor substrate surface |
Jul. 3, 2007 |
| 7238622 |
Wafer bonded virtual substrate and method for forming the same |
Jul. 3, 2007 |
| 7233054 |
Phase change material and non-volatile memory device using the same |
Jun. 19, 2007 |
| 7211521 |
Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer |
May. 1, 2007 |
| 7202121 |
Methods for preserving strained semiconductor substrate layers during CMOS processing |
Apr. 10, 2007 |
| 7199015 |
Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
Apr. 3, 2007 |
| 7195934 |
Method and system for deposition tuning in an epitaxial film growth apparatus |
Mar. 27, 2007 |
| 7192884 |
Method for manufacturing semiconductor laser device |
Mar. 20, 2007 |
| 7176041 |
PAA-based etchant, methods of using same, and resultant structures |
Feb. 13, 2007 |
| 7172975 |
Process for the wet chemical treatment of semiconductor wafers |
Feb. 6, 2007 |
| 7163903 |
Method for making a semiconductor structure using silicon germanium |
Jan. 16, 2007 |
| 7153753 |
Strained Si/SiGe/SOI islands and processes of making same |
Dec. 26, 2006 |
| 7129184 |
Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch |
Oct. 31, 2006 |
| 7037854 |
Method for chemical-mechanical jet etching of semiconductor structures |
May. 2, 2006 |
| 7018909 |
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
Mar. 28, 2006 |
| 7019339 |
Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby |
Mar. 28, 2006 |
| 6995054 |
Method of manufacturing a semiconductor device |
Feb. 7, 2006 |
| 6982229 |
Ion recoil implantation and enhanced carrier mobility in CMOS device |
Jan. 3, 2006 |
| 6982208 |
Method for producing high throughput strained-Si channel MOSFETS |
Jan. 3, 2006 |
| 6967175 |
Damascene gate semiconductor processing with local thinning of channel region |
Nov. 22, 2005 |
| 6960536 |
Method for producing integrated microsystems |
Nov. 1, 2005 |
| 6958286 |
Method of preventing surface roughening during hydrogen prebake of SiGe substrates |
Oct. 25, 2005 |
| 6951819 |
High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
Oct. 4, 2005 |
| 6946350 |
Controlled faceting of source/drain regions |
Sep. 20, 2005 |
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