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Class Information
Number: 438/751
Name: Semiconductor device manufacturing: process > Chemical etching > Liquid phase etching > Sequential application of etchant > To same side of substrate > Each etch step exposes surface of an adjacent layer
Description: Processes wherein a layer on the semiconductor substrate previously covered by a different layer is exposed by each liquid phase etching step.


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
6033995 Inverted layer epitaxial liftoff process Mar. 7, 2000
6022751 Production of electronic device Feb. 8, 2000
6017824 Passivation etching procedure, using a polysilicon stop layer, for repairing embedded DRAM cells Jan. 25, 2000
6004881 Digital wet etching of semiconductor materials Dec. 21, 1999
5994239 Manufacturing process to eliminate polystringers in high density nand-type flash memory devices Nov. 30, 1999
5990022 Method of evaluating a silicon wafer Nov. 23, 1999
5981372 Method for manufacturing a semiconductor device Nov. 9, 1999
5980633 Process for producing a semiconductor substrate Nov. 9, 1999
5906951 Strained Si/SiGe layers on insulator May. 25, 1999
5885888 Etching material and etching process Mar. 23, 1999
5858861 Reducing nitride residue by changing the nitride film surface property Jan. 12, 1999
5833759 Method for preparing vias for subsequent metallization Nov. 10, 1998
5827784 Method for improving contact openings during the manufacture of an integrated circuit Oct. 27, 1998
5750441 Mask having a tapered profile used during the formation of a semiconductor device May. 12, 1998
5700739 Method of multi-step reactive ion etch for patterning adjoining semiconductor metallization layers Dec. 23, 1997
5674799 1,5-diethenylnaphthalene compounds and bifunctional primers for anionic polymerization prepared therefrom Oct. 7, 1997
5654244 Process for producing semiconductor strain-sensitive sensor Aug. 5, 1997
5620611 Method to improve uniformity and reduce excess undercuts during chemical etching in the manufacture of solder pads Apr. 15, 1997
5607543 Integrated circuit etching Mar. 4, 1997
5492235 Process for single mask C4 solder bump fabrication Feb. 20, 1996
5490901 Method for forming a contact hole in a semiconductor device Feb. 13, 1996
5455193 Method of forming a silicon-on-insulator (SOI) material having a high degree of thickness uniformity Oct. 3, 1995
5372675 Method for producing fine structure for electronic device Dec. 13, 1994
5344524 SOI substrate fabrication Sep. 6, 1994
5334259 Amorphous silicon solar cell and method of manufacture Aug. 2, 1994
5330932 Method for fabricating GaInP/GaAs structures Jul. 19, 1994
5316618 Etching method for obtaining at least one cavity in a substrate May. 31, 1994
5277748 Semiconductor device substrate and process for preparing the same Jan. 11, 1994
5264076 Integrated circuit process using a "hard mask" Nov. 23, 1993
5261999 Process for making strain-compensated bonded silicon-on-insulator material free of dislocations Nov. 16, 1993
5223081 Method for roughening a silicon or polysilicon surface for a semiconductor substrate Jun. 29, 1993
5185277 Method for the making of a transistor gate Feb. 9, 1993
5173447 Method for producing strained quantum well semiconductor laser elements Dec. 22, 1992
5147808 High energy ion implanted silicon on insulator structure Sep. 15, 1992
5137845 Method of forming metal contact pads and terminals on semiconductor chips Aug. 11, 1992
5081002 Method of localized photohemical etching of multilayered semiconductor body Jan. 14, 1992
4954218 Method for etching a pattern Sep. 4, 1990
4944838 Method of making tapered semiconductor waveguides Jul. 31, 1990
4588471 Process for etching composite chrome layers May. 13, 1986
4495026 Method for manufacturing metallized semiconductor components Jan. 22, 1985
4372803 Method for etch thinning silicon devices Feb. 8, 1983
4354898 Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures Oct. 19, 1982
4255229 Method of reworking PROMS Mar. 10, 1981

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