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Class Information
Number: 438/735
Name: Semiconductor device manufacturing: process > Chemical etching > Vapor phase etching (i.e., dry etching) > Differential etching of semiconductor substrate
Description: Processes directed to (a) contact only selected surface areas of the substrate with the etchant to remove a constituent part of the substrate at the selected surface areas only or (b) cause the substrate to be treated at different rates in different areas to produce a nonuniform surface.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6238580 |
Method of HF vapor release of microstructures |
May. 29, 2001 |
| 6235628 |
Method of forming dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide middle etch stop layer |
May. 22, 2001 |
| 6225234 |
In situ and ex situ hardmask process for STI with oxide collar application |
May. 1, 2001 |
| 6225217 |
Method of manufacturing semiconductor device having multilayer wiring |
May. 1, 2001 |
| 6218310 |
RTA methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile |
Apr. 17, 2001 |
| 6215114 |
Optical probe for detecting or irradiating light and near-field optical microscope having such probe and manufacturing method of such probe |
Apr. 10, 2001 |
| 6200865 |
Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gate |
Mar. 13, 2001 |
| 6200877 |
Method of forming a charge storage electrode having a selective hemispherical grains silicon film in a semiconductor device |
Mar. 13, 2001 |
| 6197687 |
Method of patterning field dielectric regions in a semiconductor device |
Mar. 6, 2001 |
| 6190991 |
Method for fabricating a capacitor |
Feb. 20, 2001 |
| 6187688 |
Pattern formation method |
Feb. 13, 2001 |
| 6184146 |
Plasma producing tools, dual-source plasma etchers, dual-source plasma etching methods, and method of forming planar coil dual-source plasma etchers |
Feb. 6, 2001 |
| 6171972 |
Fracture-resistant micromachined devices |
Jan. 9, 2001 |
| 6165910 |
Self-aligned contacts for semiconductor device |
Dec. 26, 2000 |
| 6162736 |
Process for fabricating a semiconductor integrated circuit utilizing an exposure method |
Dec. 19, 2000 |
| 6153485 |
Salicide formation on narrow poly lines by pulling back of spacer |
Nov. 28, 2000 |
| 6153466 |
Method for increasing capacitance |
Nov. 28, 2000 |
| 6146948 |
Method for manufacturing a thin oxide for use in semiconductor integrated circuits |
Nov. 14, 2000 |
| 6140225 |
Method of manufacturing semiconductor device having multilayer wiring |
Oct. 31, 2000 |
| 6133153 |
Self-aligned contacts for semiconductor device |
Oct. 17, 2000 |
| 6133157 |
Dry etching method of a silicon thin film |
Oct. 17, 2000 |
| 6121156 |
Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit |
Sep. 19, 2000 |
| 6121145 |
Method of fabricating via and interconnection |
Sep. 19, 2000 |
| 6121153 |
Semiconductor device having a regrowth crystal region |
Sep. 19, 2000 |
| 6114252 |
Plasma processing tools, dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers |
Sep. 5, 2000 |
| 6103603 |
Method of fabricating gate electrodes of twin-well CMOS device |
Aug. 15, 2000 |
| 6103619 |
Method of forming a dual damascene structure on a semiconductor wafer |
Aug. 15, 2000 |
| 6100202 |
Pre deposition stabilization method for forming a void free isotropically etched anisotropically patterned doped silicate glass layer |
Aug. 8, 2000 |
| 6090715 |
Masking process for forming self-aligned dual wells or self-aligned field-doping regions |
Jul. 18, 2000 |
| 6087269 |
Method of making an interconnect using a tungsten hard mask |
Jul. 11, 2000 |
| 6083849 |
Methods of forming hemispherical grain polysilicon |
Jul. 4, 2000 |
| 6077787 |
Method for radiofrequency wave etching |
Jun. 20, 2000 |
| 6074569 |
Stripping method for photoresist used as mask in Ch.sub.4 /H.sub.2 based reactive ion etching (RIE) of compound semiconductors |
Jun. 13, 2000 |
| 6071825 |
Fully overlapped nitride-etch defined device and processing sequence |
Jun. 6, 2000 |
| 6071823 |
Deep trench bottle-shaped etch in centura mark II NG |
Jun. 6, 2000 |
| 6060398 |
Guard cell for etching |
May. 9, 2000 |
| 6057240 |
Aqueous surfactant solution method for stripping metal plasma etch deposited oxidized metal impregnated polymer residue layers from patterned metal layers |
May. 2, 2000 |
| 6043157 |
Semiconductor device having dual gate electrode material and process of fabrication thereof |
Mar. 28, 2000 |
| 6020270 |
Bomine and iodine etch process for silicon and silicides |
Feb. 1, 2000 |
| 6017824 |
Passivation etching procedure, using a polysilicon stop layer, for repairing embedded DRAM cells |
Jan. 25, 2000 |
| 6008138 |
Process for making micromechanical structures |
Dec. 28, 1999 |
| 6004631 |
Apparatus and method of removing unnecessary matter and coating process using such method |
Dec. 21, 1999 |
| 5989445 |
Microchannel system for fluid delivery |
Nov. 23, 1999 |
| 5990009 |
Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit |
Nov. 23, 1999 |
| 5980763 |
Electronic device manufacture |
Nov. 9, 1999 |
| 5976980 |
Method and apparatus providing a mechanical probe structure in an integrated circuit die |
Nov. 2, 1999 |
| 5972232 |
Micromirror for a hybrid optoelectronic integrated circuit, a method for manufacturing the same, a micromirror-photodetector assembly and an assembly of hybrid optoelectronic integrated circui |
Oct. 26, 1999 |
| 5970344 |
Method of manufacturing semiconductor device having gate electrodes formed in trench structure before formation of source layers |
Oct. 19, 1999 |
| 5955380 |
Endpoint detection method and apparatus |
Sep. 21, 1999 |
| 5952247 |
Method of accessing the circuitry on a semiconductor substrate from the bottom of the semiconductor substrate |
Sep. 14, 1999 |
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