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Class Information
Number: 438/705
Name: Semiconductor device manufacturing: process > Chemical etching > Altering etchability of substrate region by compositional or crystalline modification
Description: Processes wherein the manner in which a semiconductor substrate is etched by a chemical etchant is altered by contacting the substrate prior to etching (a) with a material which alloys or diffuses into a substrate region or (b) by modifying the crystalline structure of a substrate region (e.g., amorphosizing, introducing dislocations, etc.).


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
5833870 Method for forming a high density quantum wire Nov. 10, 1998
5824596 POCl.sub.3 process flow for doping polysilicon without forming oxide pillars or gate oxide shorts Oct. 20, 1998
5817580 Method of etching silicon dioxide Oct. 6, 1998
5804506 Acceleration of etch selectivity for self-aligned contact Sep. 8, 1998
5776817 Method of forming a trench structure in a semiconductor device Jul. 7, 1998
5767020 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution Jun. 16, 1998
5753523 Method for making airbridge from ion-implanted conductive polymers May. 19, 1998
5743998 Process for transferring microminiature patterns using spin-on glass resist media Apr. 28, 1998
5736430 Transducer having a silicon diaphragm and method for forming same Apr. 7, 1998
5736002 Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same Apr. 7, 1998
5731245 High aspect ratio low resistivity lines/vias with a tungsten-germanium alloy hard cap Mar. 24, 1998
5702869 Soft ashing method for removing fluorinated photoresists layers from semiconductor substrates Dec. 30, 1997
5702867 Method for forming fine pattern in semiconductor device Dec. 30, 1997
5698467 Method of manufacturing an insulation layer having a flat surface Dec. 16, 1997
5693557 Method of fabricating a semiconductor device Dec. 2, 1997
5683546 Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge Nov. 4, 1997
5674406 Stopper manufacturing method of a silicon micromachining structure Oct. 7, 1997
5674758 Silicon on insulator achieved using electrochemical etching Oct. 7, 1997
5662768 High surface area trenches for an integrated ciruit device Sep. 2, 1997
5651860 Ion-implanted resist removal method Jul. 29, 1997
5641382 Method to remove residue of metal etch Jun. 24, 1997
5641380 Method for fabricating a semiconductor device Jun. 24, 1997
5639689 Method for fabricating storage electrode of semiconductor device Jun. 17, 1997
5620920 Process for fabricating a CMOS structure with ESD protection Apr. 15, 1997
5618345 Method of producing self-supporting thin film of silicon single crystal Apr. 8, 1997
5616511 Method of fabricating a micro-trench storage capacitor Apr. 1, 1997
5599736 Fabrication method for polysilicon contact plugs Feb. 4, 1997
5593906 Method of processing a polysilicon film on a single-crystal silicon substrate Jan. 14, 1997
5587338 Polysilicon contact stud process Dec. 24, 1996
5580419 Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation Dec. 3, 1996
5561079 Stalagraphy Oct. 1, 1996
5536360 Method for etching boron nitride Jul. 16, 1996
5507911 Monolithic micromechanical vibrating string accelerometer with trimmable resonant frequency Apr. 16, 1996
5500386 Manufacturing method of semiconductor devices Mar. 19, 1996
5500078 8-beam bridge-type silicon acceleration sensor and the fabricating method thereof Mar. 19, 1996
5487967 Surface-imaging technique for lithographic processes for device fabrication Jan. 30, 1996
5464509 P-N junction etch-stop technique for electrochemical etching of semiconductors Nov. 7, 1995
5449630 Method for fabricating a trench capacitor structure for dynamic random access memory integrated circuit Sep. 12, 1995
5444007 Formation of trenches having different profiles Aug. 22, 1995
5436174 Method of forming trenches in monocrystalline silicon carbide Jul. 25, 1995
5427649 Method for forming a pattern by silylation Jun. 27, 1995
5425844 Method of making layer containing magnetic material Jun. 20, 1995
5413953 Method for planarizing an insulator on a semiconductor substrate using ion implantation May. 9, 1995
5401357 Dry etching method Mar. 28, 1995
5399230 Method and apparatus for etching compound semiconductor Mar. 21, 1995
5399527 Method of forming multilayer aluminum wiring in semiconductor IC Mar. 21, 1995
5393682 Method of making tapered poly profile for TFT device manufacturing Feb. 28, 1995
5374328 Method of fabricating group III-V compound Dec. 20, 1994
5372962 Method of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrode Dec. 13, 1994
5358908 Method of creating sharp points and other features on the surface of a semiconductor substrate Oct. 25, 1994

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