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Class Information
Number: 438/704
Name: Semiconductor device manufacturing: process > Chemical etching > Having liquid and vapor etching steps
Description: Processes having a liquid (i.e., wet) chemical etching step and a gaseous (i.e., dry) chemical etching step.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6180440 |
Method of fabricating a recessed-gate FET without producing voids in the gate metal |
Jan. 30, 2001 |
| 6180466 |
Isotropic assisted dual trench etch |
Jan. 30, 2001 |
| 6180528 |
Method for forming a minute resist pattern and method for forming a gate electrode |
Jan. 30, 2001 |
| 6177353 |
Metallization etching techniques for reducing post-etch corrosion of metal lines |
Jan. 23, 2001 |
| 6174596 |
Process for fabricating dual damascene structure by applying an etch-differentiating technique on a light sensitive organic oxide layer |
Jan. 16, 2001 |
| 6174817 |
Two step oxide removal for memory cells |
Jan. 16, 2001 |
| 6165870 |
Element isolation method for semiconductor devices including etching implanted region under said spacer to form a stepped trench structure |
Dec. 26, 2000 |
| 6165842 |
Method for fabricating a non-volatile memory device using nano-crystal dots |
Dec. 26, 2000 |
| 6150275 |
Micromechanical system fabrication method using (111) single crystalline silicon |
Nov. 21, 2000 |
| 6147003 |
Method of manufacturing semiconductor device |
Nov. 14, 2000 |
| 6140254 |
Edge bead removal for nanoporous dielectric silica coatings |
Oct. 31, 2000 |
| 6140244 |
Method for forming a spacer |
Oct. 31, 2000 |
| 6132522 |
Wet processing methods for the manufacture of electronic components using sequential chemical processing |
Oct. 17, 2000 |
| 6117793 |
Using silicide cap as an etch stop for multilayer metal process and structures so formed |
Sep. 12, 2000 |
| 6100202 |
Pre deposition stabilization method for forming a void free isotropically etched anisotropically patterned doped silicate glass layer |
Aug. 8, 2000 |
| 6100183 |
Method for fabricating a via |
Aug. 8, 2000 |
| 6090688 |
Method for fabricating an SOI substrate |
Jul. 18, 2000 |
| 6080674 |
Method for forming via holes |
Jun. 27, 2000 |
| 6074947 |
Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching |
Jun. 13, 2000 |
| 6057239 |
Dual damascene process using sacrificial spin-on materials |
May. 2, 2000 |
| 6046113 |
Combined dry and wet etch for improved silicide formation |
Apr. 4, 2000 |
| 6043154 |
Method for manufacturing charge storage electrode |
Mar. 28, 2000 |
| 6037270 |
Method of manufacturing semiconductor device and methods of processing, analyzing and manufacturing its substrate |
Mar. 14, 2000 |
| 6025270 |
Planarization process using tailored etchback and CMP |
Feb. 15, 2000 |
| 6020263 |
Method of recovering alignment marks after chemical mechanical polishing of tungsten |
Feb. 1, 2000 |
| 6012469 |
Etch residue clean |
Jan. 11, 2000 |
| 6008129 |
Process for forming a semiconductor device |
Dec. 28, 1999 |
| 6006764 |
Method of stripping photoresist from Al bonding pads that prevents corrosion |
Dec. 28, 1999 |
| 6006763 |
Surface treatment method |
Dec. 28, 1999 |
| 6001719 |
Methods of forming metal silicide layers having insulator-filled recesses therein |
Dec. 14, 1999 |
| 5981355 |
Method of forming isolating region |
Nov. 9, 1999 |
| 5976977 |
Process for DRAM capacitor formation |
Nov. 2, 1999 |
| 5972794 |
Silicon stencil mask manufacturing method |
Oct. 26, 1999 |
| 5968845 |
Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same |
Oct. 19, 1999 |
| 5968851 |
Controlled isotropic etch process and method of forming an opening in a dielectric layer |
Oct. 19, 1999 |
| 5962345 |
Method to reduce contact resistance by means of in-situ ICP |
Oct. 5, 1999 |
| 5935870 |
Top view TEM sample preparation method |
Aug. 10, 1999 |
| 5933728 |
Process for fabricating bottom electrode of capacitor |
Aug. 3, 1999 |
| 5925577 |
Method for forming via contact hole in a semiconductor device |
Jul. 20, 1999 |
| 5912185 |
Methods for forming contact holes having improved sidewall profiles |
Jun. 15, 1999 |
| 5899747 |
Method for forming a tapered spacer |
May. 4, 1999 |
| 5897353 |
Method of forming dielectric film of semiconductor memory device |
Apr. 27, 1999 |
| 5888309 |
Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma |
Mar. 30, 1999 |
| 5869399 |
Method for increasing utilizable surface of rugged polysilicon layer in semiconductor device |
Feb. 9, 1999 |
| 5868854 |
Method and apparatus for processing samples |
Feb. 9, 1999 |
| 5865900 |
Etch method for removing metal-fluoropolymer residues |
Feb. 2, 1999 |
| 5863829 |
Process for fabricating SOI substrate |
Jan. 26, 1999 |
| 5858859 |
Semiconductor device having a trench for device isolation fabrication method |
Jan. 12, 1999 |
| 5853602 |
Method of dry etching for patterning refractory metal layer improved in etching rate, anisotropy and selectivity to silicon oxide |
Dec. 29, 1998 |
| RE36006 |
Metal selective polymer removal |
Dec. 22, 1998 |
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