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Class Information
Number: 438/701
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with coating step > Formation of groove or trench > Tapered configuration
Description: Processes wherein the viahole or trench is formed so as to possess nonparallel sides.


Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
6287962 Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing Sep. 11, 2001
6277731 Method for forming a semiconductor connection with a top surface having an enlarged recess Aug. 21, 2001
6274483 Method to improve metal line adhesion by trench corner shape modification Aug. 14, 2001
6274457 Method for manufacturing an isolation trench having plural profile angles Aug. 14, 2001
6265292 Method of fabrication of a novel flash integrated circuit Jul. 24, 2001
6261968 Method of forming a self-aligned contact hole on a semiconductor wafer Jul. 17, 2001
6258701 Process for forming insulating structures for integrated circuits Jul. 10, 2001
6258711 Sacrificial deposit to improve damascene pattern planarization in semiconductor wafers Jul. 10, 2001
6242344 Tri-layer resist method for dual damascene process Jun. 5, 2001
6242275 Method for manufacturing quantum wires Jun. 5, 2001
6239019 Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectrics May. 29, 2001
6235561 Method of manufacturing thin-film transistors May. 22, 2001
6232203 Process for making improved shallow trench isolation by employing nitride spacers in the formation of the trenches May. 15, 2001
6228769 Endpoint detection by chemical reaction and photoionization May. 8, 2001
6228754 Method for forming semiconductor seed layers by inert gas sputter etching May. 8, 2001
6221734 Method of reducing CMP dishing effect Apr. 24, 2001
6204186 Method of making integrated circuit capacitor including tapered plug Mar. 20, 2001
6204191 Method of manufacturing semiconductor devices and semiconductor device capacitor manufactured thereby Mar. 20, 2001
6200880 Method for forming shallow trench isolation Mar. 13, 2001
6194236 Electrochemical etching method for silicon substrate having PN junction Feb. 27, 2001
6180516 Method of fabricating a dual damascene structure Jan. 30, 2001
6180440 Method of fabricating a recessed-gate FET without producing voids in the gate metal Jan. 30, 2001
6177331 Method for manufacturing semiconductor device Jan. 23, 2001
6177360 Process for manufacture of integrated circuit device Jan. 23, 2001
6177352 Method for producing semiconductor bodies with an MOVPE layer sequence Jan. 23, 2001
6174823 Methods of forming a barrier layer Jan. 16, 2001
6171949 Low energy passivation of conductive material in damascene process for semiconductors Jan. 9, 2001
6165845 Method to fabricate poly tip in split-gate flash Dec. 26, 2000
6159833 Method of forming a contact hole in a semiconductor wafer Dec. 12, 2000
6156641 Semiconductor processing methods of forming self-aligned contact openings Dec. 5, 2000
6156217 Method for the purpose of producing a stencil mask Dec. 5, 2000
6153478 STI process for eliminating kink effect Nov. 28, 2000
6143649 Method for making semiconductor devices having gradual slope contacts Nov. 7, 2000
6140226 Dual damascene processing for semiconductor chip interconnects Oct. 31, 2000
6140677 Semiconductor topography for a high speed MOSFET having an ultra narrow gate Oct. 31, 2000
6133140 Method of manufacturing dual damascene utilizing anisotropic and isotropic properties Oct. 17, 2000
6127215 Deep pivot mask for enhanced buried-channel PFET performance and reliability Oct. 3, 2000
6117785 Multiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereon Sep. 12, 2000
6114237 Method of forming contacts for a semiconductor device Sep. 5, 2000
6110833 Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation Aug. 29, 2000
6110824 Wire shape conferring reduced crosstalk and formation methods Aug. 29, 2000
6107158 Method of manufacturing a trench structure in a semiconductor substrate Aug. 22, 2000
6107138 Method for fabricating a semiconductor device having a tapered contact hole Aug. 22, 2000
6096651 Key-hole reduction during tungsten plug formation Aug. 1, 2000
6074951 Vapor phase etching of oxide masked by resist or masking material Jun. 13, 2000
6074942 Method for forming a dual damascene contact and interconnect Jun. 13, 2000
6057241 Method of manufacturing a semiconductor integrated circuit device May. 2, 2000
6045712 Micromachined reflector antenna method Apr. 4, 2000
6043151 Method for forming a semiconductor connection with a top surface having an enlarged recess Mar. 28, 2000
6040231 Method of fabricating a shallow trench isolation structure which includes using a salicide process to form an aslope periphery at the top corner of the substrate Mar. 21, 2000

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