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Class Information
Number: 438/699
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with coating step > Planarization by etching and coating > Plural coating steps
Description: Processes having multiple material deposition steps are utilized in the planarization of the surface.


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
5173448 Process for fabricating a semiconductor device Dec. 22, 1992
5173151 Method of dry etching in semiconductor device processing Dec. 22, 1992
5173439 Forming wide dielectric-filled isolation trenches in semi-conductors Dec. 22, 1992
5162254 Semiconductor device having a SOI substrate and fabrication method thereof Nov. 10, 1992
5157002 Method for forming a mask pattern for contact hole Oct. 20, 1992
5143866 Dry etching method for refractory metals, refractory metal silicides, and other refractory metal compounds Sep. 1, 1992
5139608 Method of planarizing a semiconductor device surface Aug. 18, 1992
5112776 Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing May. 12, 1992
5110410 Zinc sulfide planarization May. 5, 1992
5110763 Process of fabricating multi-level wiring structure, incorporated in semiconductor device May. 5, 1992
5084419 Method of manufacturing semiconductor device using chemical-mechanical polishing Jan. 28, 1992
5084130 Method for depositing material on depressions Jan. 28, 1992
5079188 Method for the production of a semiconductor device Jan. 7, 1992
5077238 Method of manufacturing a semiconductor device with a planar interlayer insulating film Dec. 31, 1991
5077234 Planarization process utilizing three resist layers Dec. 31, 1991
5068207 Method for producing a planar surface in integrated circuit manufacturing Nov. 26, 1991
5026666 Method of making integrated circuits having a planarized dielectric Jun. 25, 1991
5022958 Method of etching for integrated circuits with planarized dielectric Jun. 11, 1991
5015602 Method of manufacturing a semiconductor device having a planarized construction May. 14, 1991
5006485 Method of manufacturing an intergrated circuit including steps for forming interconnections between patterns formed at different levels Apr. 9, 1991
4996165 Self-aligned dielectric assisted planarization process Feb. 26, 1991
4986878 Process for improved planarization of the passivation layers for semiconductor devices Jan. 22, 1991
4983545 Planarization of dielectric films on integrated circuits Jan. 8, 1991
4977108 Method of making self-aligned, planarized contacts for semiconductor devices Dec. 11, 1990
4962064 Method of planarization of topologies in integrated circuit structures Oct. 9, 1990
4962063 Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing Oct. 9, 1990
4960727 Method for forming a dielectric filled trench Oct. 2, 1990
4954459 Method of planarization of topologies in integrated circuit structures Sep. 4, 1990
4948459 Method of enabling electrical connection to a substructure forming part of an electronic device Aug. 14, 1990
4946550 Forming electrical connections for electronic devices Aug. 7, 1990
4916087 Method of manufacturing a semiconductor device by filling and planarizing narrow and wide trenches Apr. 10, 1990
4894351 Method for making a silicon IC with planar double layer metal conductors system Jan. 16, 1990
4892845 Method for forming contacts through a thick oxide layer on a semiconductive device Jan. 9, 1990
4892614 Integrated circuit isolation process Jan. 9, 1990
4879257 Planarization process Nov. 7, 1989
4876216 Semiconductor integrated circuit manufacturing process providing oxide-filled trench isolation of circuit devices Oct. 24, 1989
4876223 Method of manufacturing semiconductor devices Oct. 24, 1989
4876217 Method of forming semiconductor structure isolation regions Oct. 24, 1989
4872947 CVD of silicon oxide using TEOS decomposition and in-situ planarization process Oct. 10, 1989
4842675 Integrated circuit isolation process Jun. 27, 1989
4836885 Planarization process for wide trench isolation Jun. 6, 1989
4829025 Process for patterning films in manufacture of integrated circuit structures May. 9, 1989
4826786 Method for forming a multilayered metal network for bonding components of a high-density integrated circuit, and integrated circuit produced thereby May. 2, 1989
4824802 Method of filling interlevel dielectric via or contact holes in multilevel VLSI metallization structures Apr. 25, 1989
4810669 Method of fabricating a semiconductor device Mar. 7, 1989
4806504 Planarization method Feb. 21, 1989
4799990 Method of self-aligning a trench isolation structure to an implanted well region Jan. 24, 1989
4800176 Method for forming contact portion in semiconductor integrated circuit devices Jan. 24, 1989
4789648 Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias Dec. 6, 1988
4783238 Planarized insulation isolation Nov. 8, 1988

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