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Class Information
Number: 438/697
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with coating step > Planarization by etching and coating
Description: Processes wherein at least one surface of the semiconductor substrate is leveled through a combination of chemical etching and material deposition.

Sub-classes under this class:

Class Number Class Name Patents
438/699 Plural coating steps 453
438/698 Utilizing reflow 149

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
6251790 Method for fabricating contacts in a semiconductor device Jun. 26, 2001
6248651 Low cost method of fabricating transient voltage suppressor semiconductor devices or the like Jun. 19, 2001
6242352 Method of preventing micro-scratches on the surface of a semiconductor wafer when performing a CMP process Jun. 5, 2001
6242355 Method for insulating metal conductors by spin-on-glass and devices made Jun. 5, 2001
6242356 Etchback method for forming microelectronic layer with enhanced surface smoothness Jun. 5, 2001
6239011 Method of self-aligned contact hole etching by fluorine-containing discharges May. 29, 2001
6239034 Method of manufacturing inter-metal dielectric layers for semiconductor devices May. 29, 2001
6239020 Method for forming interlayer dielectric layer May. 29, 2001
6235637 Method for marking a wafer without inducing flat edge particle problem May. 22, 2001
6232231 Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect May. 15, 2001
6228772 Method of removing surface defects or other recesses during the formation of a semiconductor device May. 8, 2001
6221560 Method to enhance global planarization of silicon oxide surface for IC device fabrication Apr. 24, 2001
6214735 Method for planarizing a semiconductor substrate Apr. 10, 2001
6200901 Polishing polymer surfaces on non-porous CMP pads Mar. 13, 2001
6197691 Shallow trench isolation process Mar. 6, 2001
6197671 Multiple finger polysilicon gate structure and method of making Mar. 6, 2001
6194313 Method for reducing recess for the formation of local interconnect and or plug trench fill for etchback process Feb. 27, 2001
6191040 Wafer surface treatment methods and systems using electrocapillarity Feb. 20, 2001
6191037 Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes Feb. 20, 2001
6191026 Method for submicron gap filling on a semiconductor substrate Feb. 20, 2001
6187683 Method for final passivation of integrated circuit Feb. 13, 2001
6184143 Semiconductor integrated circuit device and fabrication process thereof Feb. 6, 2001
6177360 Process for manufacture of integrated circuit device Jan. 23, 2001
6174815 Method for planarizing DRAM cells Jan. 16, 2001
6171962 Shallow trench isolation formation without planarization mask Jan. 9, 2001
6162690 Methods of forming field effect transistors having self-aligned intermediate source and drain contacts Dec. 19, 2000
6159858 Slurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurry Dec. 12, 2000
6156631 Method of manufacturing semiconductor device Dec. 5, 2000
6153478 STI process for eliminating kink effect Nov. 28, 2000
6153525 Methods for chemical mechanical polish of organic polymer dielectric films Nov. 28, 2000
6153528 Method of fabricating a dual damascene structure Nov. 28, 2000
6150276 Method for fabricating metal-oxide semiconductor transistor Nov. 21, 2000
6150273 Method of fabricating a kink-effect-free shallow trench isolations Nov. 21, 2000
6147001 Method of manufacturing semiconductor integrated circuit device Nov. 14, 2000
6143664 Method of planarizing a structure having an interpoly layer Nov. 7, 2000
6140239 Chemically removable Cu CMP slurry abrasive Oct. 31, 2000
6140242 Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature Oct. 31, 2000
6140254 Edge bead removal for nanoporous dielectric silica coatings Oct. 31, 2000
6140200 Methods of forming void regions dielectric regions and capacitor constructions Oct. 31, 2000
6140240 Method for eliminating CMP induced microscratches Oct. 31, 2000
6136714 Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor Oct. 24, 2000
6136716 Method for manufacturing a self-aligned stacked storage node DRAM cell Oct. 24, 2000
6133062 Method of fabricating focusing and color-filtering structure for semiconductor light-sensitive device Oct. 17, 2000
6121146 Method for forming contact plugs of a semiconductor device Sep. 19, 2000
6121152 Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly Sep. 19, 2000
6110827 Planarization method for self-aligned contact process Aug. 29, 2000
6110820 Low scratch density chemical mechanical planarization process Aug. 29, 2000
6103624 Method of improving Cu damascene interconnect reliability by laser anneal before barrier polish Aug. 15, 2000
6100200 Sputtering process for the conformal deposition of a metallization or insulating layer Aug. 8, 2000
6100198 Post-planarization, pre-oxide removal ozone treatment Aug. 8, 2000

1 2 3 4 5 6 7 8 9 10 11

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