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Class Information
Number: 438/696
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with coating step > Coating of sidewall
Description: Processes wherein the chemical etching and material deposition is affected so that only vertically disposed surfaces remain coated with the deposited material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5366929 |
Method for making reliable selective via fills |
Nov. 22, 1994 |
| 5354418 |
Method for dry etching |
Oct. 11, 1994 |
| 5342808 |
Aperture size control for etched vias and metal contacts |
Aug. 30, 1994 |
| 5330934 |
Method of fabricating a semiconductor device having miniaturized contact electrode and wiring structure |
Jul. 19, 1994 |
| 5328860 |
Method of manufacturing a semiconductor device |
Jul. 12, 1994 |
| 5318668 |
Dry etching method |
Jun. 7, 1994 |
| 5318665 |
Method for etching polysilicon film |
Jun. 7, 1994 |
| 5312776 |
Method of preventing the corrosion of metallic wirings |
May. 17, 1994 |
| 5310456 |
Dry etching method |
May. 10, 1994 |
| 5296410 |
Method for separating fine patterns of a semiconductor device |
Mar. 22, 1994 |
| 5294296 |
Method for manufacturing a contact hole of a semiconductor device |
Mar. 15, 1994 |
| 5294295 |
Method for moisture sealing integrated circuits using silicon nitride spacer protection of oxide passivation edges |
Mar. 15, 1994 |
| 5290733 |
Method of manufacturing semiconductor devices including depositing aluminum on aluminum leads |
Mar. 1, 1994 |
| 5290728 |
Method for producing a semiconductor device |
Mar. 1, 1994 |
| 5281557 |
Soluble oxides for integrated circuit fabrication formed by the incomplete dissociation of the precursor gas |
Jan. 25, 1994 |
| 5270254 |
Integrated circuit metallization with zero contact enclosure requirements and method of making the same |
Dec. 14, 1993 |
| 5270256 |
Method of forming a guard wall to reduce delamination effects |
Dec. 14, 1993 |
| 5268070 |
Dry etching method |
Dec. 7, 1993 |
| 5268313 |
Method of manufacturing a semiconductor device having a spacer |
Dec. 7, 1993 |
| 5262002 |
Method for manufacturing a trench structure in a substrate |
Nov. 16, 1993 |
| 5252506 |
Method to eliminate gate filaments on field plate isolated devices |
Oct. 12, 1993 |
| 5242861 |
Method for manufacturing semiconductor device having a multilayer wiring structure |
Sep. 7, 1993 |
| 5240879 |
Method of manufacturing a semiconductor device having conductive material provided in an insulating layer |
Aug. 31, 1993 |
| 5240875 |
Selective oxidation of silicon trench sidewall |
Aug. 31, 1993 |
| 5236549 |
Process for plasma etching |
Aug. 17, 1993 |
| 5234852 |
Sloped spacer for MOS field effect devices comprising reflowable glass layer |
Aug. 10, 1993 |
| 5229325 |
Method for forming metal wirings of semiconductor device |
Jul. 20, 1993 |
| 5219793 |
Method for forming pitch independent contacts and a semiconductor device having the same |
Jun. 15, 1993 |
| 5217912 |
Method for manufacturing a semiconductor device |
Jun. 8, 1993 |
| 5207868 |
Etching process for films of aluminum or its alloys |
May. 4, 1993 |
| 5204285 |
Method for patterning a metal layer |
Apr. 20, 1993 |
| 5204276 |
Method of manufacturing semiconductor device |
Apr. 20, 1993 |
| 5202291 |
High CF.sub.4 flow-reactive ion etch for aluminum patterning |
Apr. 13, 1993 |
| 5200028 |
Etching process of silicon material |
Apr. 6, 1993 |
| 5198388 |
Method of forming interconnection patterns |
Mar. 30, 1993 |
| 5182234 |
Profile tailored trench etch using a SF.sub.6 -O.sub.2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen |
Jan. 26, 1993 |
| 5166097 |
Silicon wafers containing conductive feedthroughs |
Nov. 24, 1992 |
| 5143866 |
Dry etching method for refractory metals, refractory metal silicides, and other refractory metal compounds |
Sep. 1, 1992 |
| 5128278 |
Method of forming a wiring pattern for a semiconductor device |
Jul. 7, 1992 |
| 5118382 |
Elimination of etch stop undercut |
Jun. 2, 1992 |
| 5116460 |
Method for selectively etching a feature |
May. 26, 1992 |
| 5114872 |
Forming planar ITO gate electrode array structures |
May. 19, 1992 |
| 5110407 |
Surface fabricating device |
May. 5, 1992 |
| 5078833 |
Dry etching method |
Jan. 7, 1992 |
| 5074956 |
Pattern forming method |
Dec. 24, 1991 |
| 5069747 |
Creation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structures |
Dec. 3, 1991 |
| 5024722 |
Process for fabricating conductors used for integrated circuit connections and the like |
Jun. 18, 1991 |
| 5023197 |
Manufacturing process of mesa SOI MOS transistor |
Jun. 11, 1991 |
| 5023203 |
Method of patterning fine line width semiconductor topology using a spacer |
Jun. 11, 1991 |
| 5019534 |
Process of making self-aligned contact using differential oxidation |
May. 28, 1991 |
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