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Class Information
Number: 438/696
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with coating step > Coating of sidewall
Description: Processes wherein the chemical etching and material deposition is affected so that only vertically disposed surfaces remain coated with the deposited material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5017513 |
Method for manufacturing a semiconductor device |
May. 21, 1991 |
| 5017515 |
Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers |
May. 21, 1991 |
| 5013675 |
Method of forming and removing polysilicon lightly doped drain spacers |
May. 7, 1991 |
| 4931137 |
Process for producing mutually spaced conductor elements on a substrate |
Jun. 5, 1990 |
| 4919748 |
Method for tapered etching |
Apr. 24, 1990 |
| 4878995 |
Method of dry etching and apparatus for use in such method |
Nov. 7, 1989 |
| 4874723 |
Selective etching of tungsten by remote and in situ plasma generation |
Oct. 17, 1989 |
| 4855017 |
Trench etch process for a single-wafer RIE dry etch reactor |
Aug. 8, 1989 |
| 4849069 |
Method of producing filaments |
Jul. 18, 1989 |
| 4838991 |
Process for defining organic sidewall structures |
Jun. 13, 1989 |
| 4829025 |
Process for patterning films in manufacture of integrated circuit structures |
May. 9, 1989 |
| 4810666 |
Method for manufacturing a mosic having self-aligned contact holes |
Mar. 7, 1989 |
| 4803181 |
Process for forming sub-micrometer patterns using silylation of resist side walls |
Feb. 7, 1989 |
| 4792534 |
Method of manufacturing a semiconductor device involving sidewall spacer formation |
Dec. 20, 1988 |
| 4784719 |
Dry etching procedure |
Nov. 15, 1988 |
| 4784720 |
Trench etch process for a single-wafer RIE dry etch reactor |
Nov. 15, 1988 |
| 4783422 |
Process for fabricating a bipolar transistor utilizing sidewall masking over the emitter |
Nov. 8, 1988 |
| 4776922 |
Formation of variable-width sidewall structures |
Oct. 11, 1988 |
| 4759821 |
Process for preparing a vertically differentiated transistor device |
Jul. 26, 1988 |
| 4759822 |
Methods for producing an aperture in a surface |
Jul. 26, 1988 |
| 4755479 |
Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers |
Jul. 5, 1988 |
| 4741802 |
Method for manufacturing semiconductor device |
May. 3, 1988 |
| 4735680 |
Method for the self-aligned silicide formation in IC fabrication |
Apr. 5, 1988 |
| 4729816 |
Isolation formation process with active area protection |
Mar. 8, 1988 |
| 4728997 |
Method of fabricating a light image detector and a linear image detector obtained by this method |
Mar. 1, 1988 |
| 4722910 |
Partially self-aligned metal contact process |
Feb. 2, 1988 |
| 4713141 |
Anisotropic plasma etching of tungsten |
Dec. 15, 1987 |
| 4707218 |
Lithographic image size reduction |
Nov. 17, 1987 |
| 4702795 |
Trench etch process |
Oct. 27, 1987 |
| 4693781 |
Trench formation process |
Sep. 15, 1987 |
| 4690729 |
Tapered trench process |
Sep. 1, 1987 |
| 4667395 |
Method for passivating an undercut in semiconductor device preparation |
May. 26, 1987 |
| 4662988 |
Semiconductor devices and their fabrication |
May. 5, 1987 |
| 4648939 |
Formation of submicrometer lines |
Mar. 10, 1987 |
| 4641420 |
Metalization process for headless contact using deposited smoothing material |
Feb. 10, 1987 |
| 4575921 |
Silicon nitride formation and use in self-aligned semiconductor device manufacturing method |
Mar. 18, 1986 |
| 4533430 |
Process for forming slots having near vertical sidewalls at their upper extremities |
Aug. 6, 1985 |
| 4528066 |
Selective anisotropic reactive ion etching process for polysilicide composite structures |
Jul. 9, 1985 |
| 4521275 |
Plasma etch chemistry for anisotropic etching of silicon |
Jun. 4, 1985 |
| 4502914 |
Method of making structures with dimensions in the sub-micrometer range |
Mar. 5, 1985 |
| 4497107 |
Method of making self-aligned high-frequency static induction transistor |
Feb. 5, 1985 |
| 4490209 |
Plasma etching using hydrogen bromide addition |
Dec. 25, 1984 |
| 4481706 |
Process for manufacturing integrated bi-polar transistors of very small dimensions |
Nov. 13, 1984 |
| 4449285 |
Method for producing a vertical channel transistor |
May. 22, 1984 |
| 4450042 |
Plasma etch chemistry for anisotropic etching of silicon |
May. 22, 1984 |
| 4441931 |
Method of making self-aligned guard regions for semiconductor device elements |
Apr. 10, 1984 |
| 4436584 |
Anisotropic plasma etching of semiconductors |
Mar. 13, 1984 |
| 4375385 |
Plasma etching of aluminum |
Mar. 1, 1983 |
| 4368085 |
SOS island edge passivation structure |
Jan. 11, 1983 |
| 4356040 |
Semiconductor device having improved interlevel conductor insulation |
Oct. 26, 1982 |
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