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Class Information
Number: 438/695
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with coating step > Simultaneous etching and coating
Description: Processes wherein the chemical etching and material deposition occur concurrently.


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
5505816 Etching of silicon dioxide selectively to silicon nitride and polysilicon Apr. 9, 1996
5504022 Method of making a semiconductor memory device having a floating gate Apr. 2, 1996
5498312 Method for anisotropic plasma etching of substrates Mar. 12, 1996
5492607 Method of fabricating a surface emitting laser with large area deflecting mirror Feb. 20, 1996
5492235 Process for single mask C4 solder bump fabrication Feb. 20, 1996
5478437 Selective processing using a hydrocarbon and hydrogen Dec. 26, 1995
5476807 Method for forming fine patterns in a semiconductor device Dec. 19, 1995
5474650 Method and apparatus for dry etching Dec. 12, 1995
5462638 Selective etching of TiW for C4 fabrication Oct. 31, 1995
5453156 Anisotropic polysilicon plasma etch using fluorine gases Sep. 26, 1995
5447598 Process for forming resist mask pattern Sep. 5, 1995
5445712 Dry etching method Aug. 29, 1995
5436205 Method of forming electrode in semiconductor device Jul. 25, 1995
5423945 Selectivity for etching an oxide over a nitride Jun. 13, 1995
5419809 Dry etching method May. 30, 1995
5420076 Method of forming a contact for multi-level interconnects in an integrated circuit May. 30, 1995
5416048 Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage May. 16, 1995
5401359 Dry etching method Mar. 28, 1995
5397431 Dry etching method Mar. 14, 1995
5391244 Dry etching method Feb. 21, 1995
5389574 Selective etching method for III-V group semiconductor material using a mixed etching gas and a stop-etching gas Feb. 14, 1995
5387556 Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub. 2 Feb. 7, 1995
5378309 Method for controlling the etching profile of a layer of an integrated circuit Jan. 3, 1995
5378312 Process for fabricating a semiconductor structure having sidewalls Jan. 3, 1995
5376234 Dry etching method Dec. 27, 1994
5370769 Dry etching method of GaAs Dec. 6, 1994
5354417 Etching MoSi.sub.2 using SF.sub.6, HBr and O.sub.2 Oct. 11, 1994
5354421 Dry etching method Oct. 11, 1994
5338393 Method for the local removal of UV-transparent insulation layers on a semiconductor substrate Aug. 16, 1994
5336636 Method for contacting conductive structures in VLSI circuits Aug. 9, 1994
5320708 Dry etching method Jun. 14, 1994
5318668 Dry etching method Jun. 7, 1994
5314578 Process for etching a multi-layer substrate May. 24, 1994
5312518 Dry etching method May. 17, 1994
5310456 Dry etching method May. 10, 1994
5275977 Insulating film forming method for semiconductor device interconnection Jan. 4, 1994
5268070 Dry etching method Dec. 7, 1993
5264396 Method for enhancing nitridation and oxidation growth by introducing pulsed NF.sub.3 Nov. 23, 1993
5262002 Method for manufacturing a trench structure in a substrate Nov. 16, 1993
5254213 Method of forming contact windows Oct. 19, 1993
5252177 Method for forming a multilayer wiring of a semiconductor device Oct. 12, 1993
5236549 Process for plasma etching Aug. 17, 1993
5236547 Method of forming a pattern in semiconductor device manufacturing process Aug. 17, 1993
5211790 Dry etching method by sulfur conditioning May. 18, 1993
5200028 Etching process of silicon material Apr. 6, 1993
5185058 Process for etching semiconductor devices Feb. 9, 1993
5182234 Profile tailored trench etch using a SF.sub.6 -O.sub.2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen Jan. 26, 1993
5118387 Dry etching method Jun. 2, 1992
5110408 Process for etching May. 5, 1992
5100504 Method of cleaning silicon surface Mar. 31, 1992

1 2 3 4 5 6 7 8


 
 
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